Patents by Inventor Tomoya TAKESHITA
Tomoya TAKESHITA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240128380Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.Type: ApplicationFiled: December 1, 2023Publication date: April 18, 2024Inventors: Yutaka OKAZAKI, Akihisa SHIMOMURA, Naoto YAMADE, Tomoya TAKESHITA, Tetsuhiro TANAKA
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Publication number: 20240121176Abstract: A band calculation device (1) according to the present disclosure, in the band calculation device (1) which calculates a band of the link (L) of a relay network (NWR) which is constituted by nodes (N) and links (L) and which relays information transmitted and received between a plurality of communication bases, includes an input unit (21) that receives an input of topology information indicating ports (P) of nodes (N), connection destination ports of the ports (P), and links, respectively, path information indicating primary paths that relay the information when a failure does not occur, paths including backup paths that relay the information when the failure occurs in the primary path, and via transmission ports that are the ports (P) for transmitting the information in the paths, respectively, and traffic information indicating the port (P) and traffic statistic value of the port (P), respectively, and a calculation unit (22) that calculates a band of the link (L) on the basis of the topology information, tType: ApplicationFiled: February 12, 2021Publication date: April 11, 2024Applicant: NIPPON TELEGRAPH AND TELEPHONE CORPORATIONInventors: Erina TAKESHITA, Tomoya KOSUGI, Yuki YAMADA
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Publication number: 20220352387Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.Type: ApplicationFiled: July 11, 2022Publication date: November 3, 2022Inventors: Yutaka OKAZAKI, Akihisa SHIMOMURA, Naoto YAMADE, Tomoya TAKESHITA, Tetsuhiro TANAKA
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Patent number: 11393930Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.Type: GrantFiled: August 31, 2020Date of Patent: July 19, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yutaka Okazaki, Akihisa Shimomura, Naoto Yamade, Tomoya Takeshita, Tetsuhiro Tanaka
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Publication number: 20210057587Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.Type: ApplicationFiled: August 31, 2020Publication date: February 25, 2021Inventors: Yutaka OKAZAKI, Akihisa SHIMOMURA, Naoto YAMADE, Tomoya TAKESHITA, Tetsuhiro TANAKA
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Patent number: 10763373Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.Type: GrantFiled: March 28, 2019Date of Patent: September 1, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yutaka Okazaki, Akihisa Shimomura, Naoto Yamade, Tomoya Takeshita, Tetsuhiro Tanaka
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Publication number: 20190221674Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.Type: ApplicationFiled: March 28, 2019Publication date: July 18, 2019Inventors: Yutaka OKAZAKI, Akihisa SHIMOMURA, Naoto YAMADE, Tomoya TAKESHITA, Tetsuhiro TANAKA
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Patent number: 10276724Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.Type: GrantFiled: July 7, 2016Date of Patent: April 30, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yutaka Okazaki, Akihisa Shimomura, Naoto Yamade, Tomoya Takeshita, Tetsuhiro Tanaka
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Publication number: 20170018655Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.Type: ApplicationFiled: July 7, 2016Publication date: January 19, 2017Inventors: Yutaka OKAZAKI, Akihisa SHIMOMURA, Naoto YAMADE, Tomoya TAKESHITA, Tetsuhiro TANAKA