Abstract: The invention provides a SiC single crystal production apparatus with high uniformity of temperature distribution in a crystal growth vessel. The SiC single crystal production apparatus includes a crystal growth vessel containing SiC raw material; an insulation part covering the periphery of the crystal growth vessel; a heater used to heat the crystal growth vessel; and a holding member used to hold the crystal growth vessel, wherein the crystal growth vessel is held in a suspended state by the holding member.

Abstract: A wafer supporting mechanism including: a wafer supporting table; and a movable part supported by the wafer supporting table, wherein the wafer supporting table includes a wafer supporting portion for transfer that stands up from a first surface opposing a back surface of a wafer to be placed and is provided further toward an inner side than an outer peripheral edge of the wafer to be placed, and the movable part includes a wafer supporting portion for film formation that is positioned further toward an outer peripheral side of the wafer to be placed than the wafer supporting portion for transfer and is relatively movable with respect to the wafer supporting table in a standing direction of the wafer supporting portion for transfer.

Abstract: The invention provides a SiC single crystal production apparatus with high uniformity of temperature distribution in a crystal growth vessel. The SiC single crystal production apparatus includes a crystal growth vessel containing SiC raw material; an insulation part covering the periphery of the crystal growth vessel; a heater used to heat the crystal growth vessel; and a holding member used to hold the crystal growth vessel, wherein the crystal growth vessel is held in a suspended state by the holding member.

Abstract: This gas piping system is a run-vent mode gas piping system in which, the gas piping system including a plurality of supply lines through which plural gases are fed individually, an exhaust line that leads from a reactor to an exhaust pump, a run line having one or plural pipes which respectively branch from the plural supply lines, plural vent lines which respectively branch from the supply lines and are connected to the exhaust line, and plural valves which are respectively provided at the branch points of the plural supply lines, and switches between feeding a gas to the run line side and feeding a gas to the vent line side, wherein the plural vent lines are separated from each other until the vent lines reach the exhaust line, and the inner diameter of the exhaust line is greater than the inner diameter of the plural vent lines.

Abstract: A wafer supporting mechanism including: a wafer supporting table; and a movable part supported by the wafer supporting table, wherein the wafer supporting table includes a wafer supporting portion for transfer that stands up from a first surface opposing a back surface of a wafer to be placed and is provided further toward an inner side than an outer peripheral edge of the wafer to be placed, and the movable part includes a wafer supporting portion for film formation that is positioned further toward an outer peripheral side of the wafer to be placed than the wafer supporting portion for transfer and is relatively movable with respect to the wafer supporting table in a standing direction of the wafer supporting portion for transfer.

Abstract: Provided is a sheet press molding method by which a molded product having a small plate thickness deviation is obtained. Such a sheet press molding method is provided with a process in which a molded product (30) having a recess and protrusion pattern portion (32), to which a recess and protrusion pattern (3) is transferred, is formed by pressurizing a sheet-shaped material (20) including 60 vol. % to 95 vol.

Abstract: A CVD device including: a chamber containing a substrate having a SiC-film formation surface; a heating mechanism for heating the substrate from a direction opposite the film formation surface; a third supply space (231) for supplying a third raw-material gas containing carbon in a direction (X) toward the substrate from the lateral side of the substrate; a second supply space (221) for supplying a second raw-material gas containing silicon in the direction (X) from the lateral side of the substrate toward the side farther than the third raw-material gas when viewed from the film formation surface; and a blocking gas supply section for supplying a blocking gas for suppressing the upward movement of the third raw-material gas and the second raw-material gas in a second direction from the side facing the film formation surface toward the film formation surface.

Abstract: A CVD device equipped with a container chamber (100) having an interior space (100a), and containing a substrate in a manner such that the film formation surface thereof faces upward from the bottom side (fifth region (A5)) of the interior space (100a). Silane gas and propane gas are supplied to the interior space (100a). A stainless-steel ceiling (120) is provided on the top of the interior space (100a). The ceiling (120) is provided with first through third partition members (171-173) attached thereto which comprise stainless steel, are positioned so as to extend in the -Z-direction and transect the X-direction, and divide the top side of the interior space (100a) into first through fourth regions (A1-A4). The substrate positioned inside the interior space (100a) is heated to 1600° C. The first through third partition members (171-173) and the ceiling (120) are cooled to 300° C. or lower by a cooling mechanism.

Abstract: Provided is a sheet press molding method by which a molded product having a small plate thickness deviation is obtained. Such a sheet press molding method is provided with a process in which a molded product (30) having a recess and protrusion pattern portion (32), to which a recess and protrusion pattern (3) is transferred, is formed by pressurizing a sheet-shaped material (20) including 60 vol. % to 95 vol.

Abstract: Provided is a sheet press molding method that can create molded articles having low thickness deviation. In this method, a molded article (30) is formed by applying pressure to a sheet material (20) using a pair of dies (10), at least one of which has a prescribed recess-projection pattern (13) comprising recess and projection portions. The method includes: a sheet-forming process in which a recessed portion (2a) having volume equal to the total volume of the projection is formed in the surface of the sheet material (20), which includes a resin composite and 60-95% filler by volume; and a pressing process wherein the recessed portion (2a) in the sheet material (20) is placed facing the recess-projection pattern (13) on the dies (10) and pressure is applied to the dies (10), thereby forming a molded article (30) to which the recess-projection pattern (13) is transferred.

Abstract: The present invention relates to a capacitor chip and a solid electrolytic capacitor, wherein in a capacitor chip in which one or more capacitor element is laminated on a metal lead frame to carry electricity and the whole is encapsulated with resin, a laminated body is located within a certain definite range. The present invention enables to increase the capacitance of a capacitor by broadening the allowable range of the total thickness of the laminated capacitor chips without generating defective appearance of the laminated solid electrolytic capacitor.

Abstract: The present invention relates to a capacitor chip and a solid electrolytic capacitor, wherein in a capacitor chip in which one or more capacitor element is laminated on a metal lead frame to carry electricity and the whole is encapsulated with resin, a laminated body is located within a certain definite range. The present invention enables to increase the capacitance of a capacitor by broadening the allowable range of the total thickness of the laminated capacitor chips without generating defective appearance of the laminated solid electrolytic capacitor.

Abstract: A solid electrolytic capacitor, including a stack of solid electrolytic capacitor elements each having an anode part and a cathode part. The stacked structure is such that cathode parts of solid electrolytic capacitor elements are stacked one on another to have some misalignment between the stacked elements. The capacitor preferably has a structure in which one end part of the cathode part of at least one of the solid electrolytic capacitor elements stacked on another element is more prominent or retracted than that of the element below.

Abstract: The invention provides a solid electrolytic capacitor, comprising a stack of solid electrolytic capacitor elements each having an anode part and a cathode part, wherein the stacked structure is such that cathode parts of solid electrolytic capacitor elements are stacked one on another to have some misalignment between the stacked elements. It is preferable that the capacitor have a structure in which one end part of the cathode part of at least one of the solid electrolytic capacitor elements stacked on another element is more prominent or retracted than that of the element below. The solid electrolytic capacitor the invention provides is a solid electrolytic capacitor improved in electric properties, particularly reduced in ESR or LC.

Abstract: A magnetic hard disc substrate made of an aluminum alloy for memory devices such as a computer must correspond to an improved structure in which the interval between a head and a medium is made narrower to attain high density recording. In order to prevent head crash, it is required that the magnetic hard disc substrate have a smooth surface and decreased defects. The present invention provides a process for manufacturing a magnetic hard disc substrate made of an aluminum alloy which satisfies the above requirements and also provides a disc substrate which has a surface roughness Ra≦0.5 nm and is free from abrasive flaws with a depth of 5 nm or more and from micro-waviness or provides a disc substrate which has a surface roughness Ra≦5 angstroms and a surface roughness Rmax≦80 angstroms and in which the number of scratches with a depth of 50 angstroms or more is 5 or less and the number of pits with a depth of 50 angstroms or less is 5 or less in the surface.

Abstract: A magnetic hard disc substrate made of an aluminum alloy for memory devices such as a computer must correspond to an improved structure in which the interval between a head and a medium is made narrower to attain high density recording. In order to prevent head crash, it is required that the magnetic hard disc substrate have a smooth surface and decreased defects. The present invention provides a process for manufacturing a magnetic hard disc substrate made of an aluminum alloy which satisfies the above requirements and also provides a disc substrate which has a surface roughness Ra.ltoreq.0.5 nm and is free from abrasive flaws with a depth of 5 nm or more and from micro-waviness or provides a disc substrate which has a surface roughness Ra.ltoreq.5 angstroms and a surface roughness Rmax.ltoreq.80 angstroms and in which the number of scratches with a depth of 50 angstroms or more is 5 or less and the number of pits with a depth of 50 angstroms or less is 5 or less in the surface.

Abstract: In a method of polishing a Ni--P plated aluminum alloy memory disk substrate, the present invention provides a polishing method which can efficiently form a good polished surface having slight polishing flaws, restrain the generation of a defect other than the polishing flaws and has a high productivity. That is, in the method according to the present invention, an alumina abrasive grain is used as a polishing compound. The present invention solves the problem by dividing the polishing process into two steps. In the first step, a first polishing is performed in which the main work pressure is 80 g/cm.sup.2 or more and the amount of polishing is 1 .mu.m or more. A second polishing is then peformed in which the main work pressure is 80 g/cm.sup.2 or less, preferably 50 g/cm.sup.2 or less, and the amount of one-sided polishing is 2 .mu.m or less. A final finish polishing is performed for 10-60 seconds prior to the completion of the second polishing step in which the main work pressure is 30 g/cm.sup.