Patents by Inventor Tomoya Yanamono

Tomoya Yanamono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitride semiconductor laser device having current blocking layer and method of manufacturing the same
    Patent number: 7817692
    Abstract: A nitride semiconductor laser including a laminate that includes an n-side semiconductor layer, an active layer and a p-side semiconductor layer, the n-side semiconductor layer or p-side semiconductor layer including a current blocking layer 30 that is made of InxAlyGa1-x-yN (0?x?0.1, 0.5?y?1, 0.5?x+y?1) and has a stripe-shaped window 32 formed therein to pass current flow.
    Type: Grant
    Filed: April 25, 2007
    Date of Patent: October 19, 2010
    Assignee: Nichia Corporation
    Inventors: Hiroaki Matsumura, Tomoya Yanamono
  • Nitride semiconductor laser device having current blocking layer and method of manufacturing the same
    Publication number: 20070195848
    Abstract: A nitride semiconductor laser including a laminate that includes an n-side semiconductor layer, an active layer and a p-side semiconductor layer, the n-side semiconductor layer or p-side semiconductor layer including a current blocking layer 30 that is made of InxAlyGa1-x-yN (0?x?0.1, 0.5?y?1, 0.5?x+y?1) and has a stripe-shaped window 32 formed therein to pass current flow.
    Type: Application
    Filed: April 25, 2007
    Publication date: August 23, 2007
    Inventors: Hiroaki Matsumura, Tomoya Yanamono
  • Nitride semiconductor laser device having current blocking layer and method of manufacturing the same
    Patent number: 7227879
    Abstract: A nitride semiconductor laser including a laminate that includes an n-side semiconductor layer, an active layer and a p-side semiconductor layer, the n-side semiconductor layer or p-side semiconductor layer including a current blocking layer 30 that is made of InxAlyGa1-x-yN (0?x?0.1, 0.5?y?1, 0.5?x+y?1) and has a stripe-shaped window 32 formed therein to pass current flow.
    Type: Grant
    Filed: June 28, 2004
    Date of Patent: June 5, 2007
    Assignee: Nichia Corporation
    Inventors: Hiroaki Matsumura, Tomoya Yanamono
  • Nitride semiconductor laser device having current blocking layer and method of manufacturing the same
    Publication number: 20040264533
    Abstract: A nitride semiconductor laser including a laminate that includes an n-side semiconductor layer, an active layer and a p-side semiconductor layer, the n-side semiconductor layer or p-side semiconductor layer including a current blocking layer 30 that is made of InxAlyGa1-x-yN (0≦x≦0.1, 0.5≦y≦1, 0.5≦x+y≦1) and has a stripe-shaped window 32 formed therein to pass current flow.
    Type: Application
    Filed: June 28, 2004
    Publication date: December 30, 2004
    Inventors: Hiroaki Matsumura, Tomoya Yanamono