Patents by Inventor Tomoya Yanamoto
Tomoya Yanamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8030665Abstract: A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together.Type: GrantFiled: April 30, 2008Date of Patent: October 4, 2011Assignee: Nichia CorporationInventors: Shinichi Nagahama, Masahiko Sano, Tomoya Yanamoto, Keiji Sakamoto, Masashi Yamamoto, Daisuke Morita
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Patent number: 7667226Abstract: A semiconductor device comprises an active layer having a quantum well structure, the active layer including a well layer and a barrier layer and being sandwiched by a first conductivity type layer and a second conductivity type layer, wherein a first barrier layer is provided on side of the first conductivity type layer in the active layer and a second barrier layer is provided on the side of the second conductivity type layer in the active layer, at least one well layer is sandwiched thereby, and the second barrier layer has a band gap energy lower than that of the first barrier layer in the form of asymmetric barrier layer structure, where the second conductivity type layer preferably includes a carrier confinement layer having a band gap energy higher than that of the first barrier layer, resulting in a reverse structure in each of conductivity type layer in respect to the asymmetric structure of the active layer to provide a waveguide structure having excellent crystallinity and device characteristics inType: GrantFiled: February 21, 2008Date of Patent: February 23, 2010Assignee: Nichia CorporationInventor: Tomoya Yanamoto
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Publication number: 20080296609Abstract: A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together.Type: ApplicationFiled: April 30, 2008Publication date: December 4, 2008Applicant: Nichia CorporationInventors: Shinichi Nagahama, Masahiko Sano, Tomoya Yanamoto, Keiji Sakamoto, Masashi Yamamoto, Daisuke Morita
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Publication number: 20080203418Abstract: A semiconductor device comprises an active layer having a quantum well structure, the active layer including a well layer and a barrier layer and being sandwiched by a first conductivity type layer and a second conductivity type layer, wherein a first barrier layer is provided on side of the first conductivity type layer in the active layer and a second barrier layer is provided on the side of the second conductivity type layer in the active layer, at least one well layer is sandwiched thereby, and the second barrier layer has a band gap energy lower than that of the first barrier layer in the form of asymmetric barrier layer structure, where the second conductivity type layer preferably includes a carrier confinement layer having a band gap energy higher than that of the first barrier layer, resulting in a reverse structure in each of conductivity type layer in respect to the asymmetric structure of the active layer to provide a waveguide structure having excellent crystallinity and device characteristics inType: ApplicationFiled: February 21, 2008Publication date: August 28, 2008Applicant: Nichia CorporationInventor: Tomoya Yanamoto
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Patent number: 7390684Abstract: A light emitting apparatus comprising a light emitting device (101) disposed on a supporting body (105), and coating layers ((108, 109) that bind a fluorescent substance that absorbs light emitted by the light emitting device (101) and emits light of a different wavelength and secures the fluorescent substance onto the surface of the light emitting device (101). The coating layers (108, 109) are made of an inorganic material including an oxide and a hydroxide, each containing at least one element selected from the group consisting of Si, Al, Ga, Ti, Ge, P, B, Zr, Y, Sn, Pb and alkali earth metals. Also an adhesive layer (110) is made of the same inorganic material as that of the coating layers (108, 109).Type: GrantFiled: July 27, 2006Date of Patent: June 24, 2008Assignee: Nichia CorporationInventors: Kunihiro Izuno, Kouki Matsumoto, Shinichi Nagahama, Masahiko Sano, Tomoya Yanamoto, Keiji Sakamoto
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Patent number: 7378334Abstract: A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together.Type: GrantFiled: February 1, 2006Date of Patent: May 27, 2008Assignee: Nichia CorporationInventors: Shinichi Nagahama, Masahiko Sano, Tomoya Yanamoto, Keiji Sakamoto, Masashi Yamamoto, Daisuke Morita
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Patent number: 7358522Abstract: A semiconductor device comprises an active layer having a quantum well structure, the active layer including a well layer and a barrier layer and being sandwiched by a first conductivity type layer and a second conductivity type layer, wherein a first barrier layer is provided on side of the first conductivity type layer in the active layer and a second barrier layer is provided on the side of the second conductivity type layer in the active layer, at least one well layer is sandwiched thereby, and the second barrier layer has a band gap energy lower than that of the first barrier layer in the form of asymmetric barrier layer structure, where the second conductivity type layer preferably includes a carrier confinement layer having a band gap energy higher than that of the first barrier layer, resulting in a reverse structure in each of conductivity type layer in respect to the asymmetric structure of the active layer to provide a waveguide structure having excellent crystallinity and device characteristics inType: GrantFiled: November 5, 2002Date of Patent: April 15, 2008Assignee: Nichia CorporationInventor: Tomoya Yanamoto
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Patent number: 7301175Abstract: A light emitting apparatus comprising a light emitting device (101) disposed on a supporting body (105), and coating layers ((108, 109) that bind a fluorescent substance that absorbs light emitted by the light emitting device (101) and emits light of a different wavelength and secures the fluorescent substance onto the surface of the light emitting device (101). The coating layers (108, 109) are made of an inorganic material including an oxide and a hydroxide, each containing at least one element selected from the group consisting of Si, Al, Ga, Ti, Ge, P, B, Zr, Y, Sn, Pb and alkali earth metals. Also an adhesive layer (110) is made of the same inorganic material as that of the coating layers (108, 109).Type: GrantFiled: September 30, 2003Date of Patent: November 27, 2007Assignee: Nichia CorporationInventors: Kunihiro Izuno, Kouki Matsumoto, Shinichi Nagahama, Masahiko Sano, Tomoya Yanamoto, Keiji Sakamoto
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Publication number: 20060267042Abstract: A light emitting apparatus comprising a light emitting device (101) disposed on a supporting body (105), and coating layers ((108, 109) that bind a fluorescent substance that absorbs light emitted by the light emitting device (101) and emits light of a different wavelength and secures the fluorescent substance onto the surface of the light emitting device (101). The coating layers (108, 109) are made of an inorganic material including an oxide and a hydroxide, each containing at least one element selected from the group consisting of Si, Al, Ga, Ti, Ge, P, B, Zr, Y, Sn, Pb and alkali earth metals. Also an adhesive layer (110) is made of the same inorganic material as that of the coating layers (108, 109).Type: ApplicationFiled: July 27, 2006Publication date: November 30, 2006Applicant: Nichia CorporationInventors: Kunihiro Izuno, Kouki Matsumoto, Shinichi Nagahama, Masahiko Sano, Tomoya Yanamoto, Keiji Sakamoto
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Patent number: 7105857Abstract: A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together.Type: GrantFiled: July 8, 2003Date of Patent: September 12, 2006Assignee: Nichia CorporationInventors: Shinichi Nagahama, Masahiko Sano, Tomoya Yanamoto, Keiji Sakamoto, Masashi Yamamoto, Daisuke Morita
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Patent number: 7095051Abstract: In a nitride semiconductor device having an active layer 12 between a first electrically conductive type of layer and a second electrically conductive type of layer, a quantum well structure is adopted in which an active layer 12 has at least a well layer 11 formed of a nitride semiconductor containing In and Al and a barrier layer 2 formed of a nitride semiconductor containing Al, whereby a laser device excellent in emitting efficacy at a short wavelength region is obtained. It is particularly preferable that said well layer 1 is formed of AlxInyGa1?x?yN (0<x?1<0<y?1, x+y<1) and said barrier layer 2 is formed of AluInvGa1?u?vN (0<u?1, 0?v?1, u+v<1). Such a light emitting device is realized to obtain excellent efficacy in emitting light of short wavelength in a region of 380 nm.Type: GrantFiled: March 28, 2002Date of Patent: August 22, 2006Assignee: Nichia CorporationInventors: Shinichi Nagahama, Tomoya Yanamoto
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Publication number: 20060128118Abstract: A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together.Type: ApplicationFiled: February 1, 2006Publication date: June 15, 2006Applicant: Nichia CorporationInventors: Shinichi Nagahama, Masahiko Sano, Tomoya Yanamoto, Keiji Sakamoto, Masashi Yamamoto, Daisuke Morita
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Publication number: 20050127391Abstract: A semiconductor device comprises an active layer having a quantum well structure, the active layer including a well layer and a barrier layer and being sandwiched by a first conductivity type layer and a second conductivity type layer, wherein a first barrier layer is provided on side of the first conductivity type layer in the active layer and a second barrier layer is provided on the side of the second conductivity type layer in the active layer, at least one well layer is sandwiched thereby, and the second barrier layer has a band gap energy lower than that of the first barrier layer in the form of asymmetric barrier layer structure, where the second conductivity type layer preferably includes a carrier confinement layer having a band gap energy higher than that of the first barrier layer, resulting in a reverse structure in each of conductivity type layer in respect to the asymmetric structure of the active layer to provide a waveguide structure having excellent crystallinity and device characteristics inType: ApplicationFiled: November 5, 2002Publication date: June 16, 2005Applicant: Nichia CorporationInventor: Tomoya Yanamoto
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Patent number: 6822272Abstract: A gallium nitride-based multilayered reflective membrane with an excellent crystallinity while keeping a high reflectivity and a gallium nitride-based light emitting element using such a multilayered reflective are provided. The multilayered reflective membrane includes an AlaGa1−aN layer (0<a<1) having a thickness of (&agr;1·&lgr;)/(4n1) (&lgr;: incident light wavelength, n1: a reflectivity) and a GaN layer having a thickness of (&agr;2·&lgr;)/(4n2) (n2: a reflectivity) which are deposited alternately and satisfy the relationship of 0<&agr;1<1 and &agr;1+&agr;2=2.Type: GrantFiled: July 8, 2002Date of Patent: November 23, 2004Assignee: Nichia CorporationInventor: Tomoya Yanamoto
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Publication number: 20040072383Abstract: A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together.Type: ApplicationFiled: July 8, 2003Publication date: April 15, 2004Applicant: Nichia CorporationInventors: Shinichi Nagahama, Masahiko Sano, Tomoya Yanamoto, Keiji Sakamoto, Masashi Yamamoto, Daisuke Morita
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Publication number: 20040061433Abstract: A light emitting apparatus comprising a light emitting device (101) disposed on a supporting body (105), and coating layers ((108, 109) that bind a fluorescent substance that absorbs light emitted by the light emitting device (101) and emits light of a different wavelength and secures the fluorescent substance onto the surface of the light emitting device (101). The coating layers (108, 109) are made of an inorganic material including an oxide and a hydroxide, each containing at least one element selected from the group consisting of Si, Al, Ga, Ti, Ge, P, B, Zr, Y, Sn, Pb and alkali earth metals. Also an adhesive layer (110) is made of the same inorganic material as that of the coating layers (108, 109).Type: ApplicationFiled: September 30, 2003Publication date: April 1, 2004Applicant: Nichia Corporation, corporation of JapanInventors: Kunihiro Izuno, Kouki Matsumoto, Shinichi Nagahama, Masahiko Sano, Tomoya Yanamoto, Keiji Sakamoto
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Publication number: 20040051107Abstract: In a nitride semiconductor device having an active layer 12 between a first electrically conductive type of layer and a second electrically conductive type of layer, a quantum well structure is adopted in which an active layer 12 has at least a well layer 11 formed of a nitride semiconductor containing In and Al and a barrier layer 2 formed of a nitride semiconductor containing Al, whereby a laser device excellent in emitting efficacy at a short wavelength region is obtained. It is particularly preferable that said well layer 1 is formed of AlxInyGa1-x-yN (0<x≦1<0<y≦1, x+y<1) and said barrier layer 2 is formed of AluInvGa1-x-vN (0<u≦1, 0≦v≦1, u+v<1).Type: ApplicationFiled: September 29, 2003Publication date: March 18, 2004Inventors: Shinichi Nagahama, Tomoya Yanamoto
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Publication number: 20030047744Abstract: A gallium nitride-based multilayered reflective membrane with an excellent crystallinity while keeping a high reflectivity and a gallium nitride-based light emitting element using such a multilayered reflective are provided. The multilayered reflective membrane includes an AlaGa1−aN layer (0<a<1) having a thickness of (&agr;1·&lgr;)/(4n1) (&lgr;: incident light wavelength, n1: a reflectivity) and a GaN layer having a thickness of (&agr;2·&lgr;)/(4n) (n2: a reflectivity) which are deposited alternately and satisfy the relationship of 0<&agr;1<1 and &agr;1+&agr;2=2.Type: ApplicationFiled: July 8, 2002Publication date: March 13, 2003Inventor: Tomoya Yanamoto