Abstract: An imaging device includes a pixel array including pixel circuits arranged into rows and columns. Each bitline of a plurality of bitlines is coupled to a respective column of pixel circuits of the pixel array. The plurality of bitlines is grouped into pairs of bitlines. A plurality of binning circuits is coupled to the plurality of bitlines. Each binning circuit is coupled to a respective pair of bitlines and is responsive to a multi-mode select signal. Each binning circuit is configured to output a binned signal responsive to the first and second bitlines of the respective bitline pair in a first mode. Each binning circuit is configured to output a first signal from a first bitline of the respective bitline pair in a second mode. Each binning circuit is configured to output a second signal from the second bitline of the respective bitline pair in a third mode.

Abstract: The present disclosure relates to a control device, a control method, and a solid-state imaging device that enable a larger number of shutter row addresses to be set at the same time. A vertical selection decoder and a latch circuit set shutter row addresses that identify rows of pixels for which an electronic shutter operation is performed, of pixels arranged in a matrix manner, on the basis of a start address and an end address of the shutter row addresses. The present disclosure is applicable to, for example, a CMOS image sensor that sets the shutter row addresses.

Abstract: A solid-state imaging device includes: a pixel array section in which a plurality of pixels including an amplification transistor configured to amplify a signal based on a photoelectric charge in accordance with an amount of received light are disposed; through vertical signal lines of the pixel array section, a bias-current control section configured to turn on or off a bias current supplied to the amplification transistor for each of the vertical signal lines; and a drive control section configured to control the bias-current control section so as to turn on the bias current of the vertical signal line through which a pixel signal is read, and to turn off the bias current of the vertical signal line through which a pixel signal is not read.

Abstract: The present disclosure relates to a control device, a control method, and a solid-state imaging device that enable a larger number of shutter row addresses to be set at the same time. A vertical selection decoder and a latch circuit set shutter row addresses that identify rows of pixels for which an electronic shutter operation is performed, of pixels arranged in a matrix manner, on the basis of a start address and an end address of the shutter row addresses. The present disclosure is applicable to, for example, a CMOS image sensor that sets the shutter row addresses.

Abstract: A solid-state imaging device includes: a pixel array section in which a plurality of pixels including an amplification transistor configured to amplify a signal based on a photoelectric charge in accordance with an amount of received light are disposed; through vertical signal lines of the pixel array section, a bias-current control section configured to turn on or off a bias current supplied to the amplification transistor for each of the vertical signal lines; and a drive control section configured to control the bias-current control section so as to turn on the bias current of the vertical signal line through which a pixel signal is read, and to turn off the bias current of the vertical signal line through which a pixel signal is not read.

Abstract: A solid-state imaging device includes a pixel array section that includes an amplification transistor configured to amplify a signal based on a photoelectric charge in accordance with an amount of received light. Through vertical signal lines of the pixel array section, a bias-current control section is configured to turn on or off a bias current supplied to the amplification transistor for each of the vertical signal lines. A drive control section is configured to control the bias-current control section. In one example, the drive control section controls switching modes between a first mode in which pixel columns whose pixel signals are read are changed in time series, and a second mode in which pixel signals of all the pixel columns are read and then the pixel signals of the plurality of pixel columns are smoothed.

Abstract: A solid-state imaging device includes: a pixel array section in which a plurality of pixels including an amplification transistor configured to amplify a signal based on a photoelectric charge in accordance with an amount of received light are disposed; through vertical signal lines of the pixel array section, a bias-current control section configured to turn on or off a bias current supplied to the amplification transistor for each of the vertical signal lines; and a drive control section configured to control the bias-current control section so as to turn on the bias current of the vertical signal line through which a pixel signal is read, and to turn off the bias current of the vertical signal line through which a pixel signal is not read.