Patents by Inventor Tomoyo Yamaguchi

Tomoyo Yamaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for etching an object to be processed
    Patent number: 7507673
    Abstract: An object to be process has a structure having an SiC film 61 and an organic Si-low dielectric constant film 62 formed on the SiC film 61. The SiC film 61 is etched using a plasma produced from an etching gas and using the organic Si low-dielectric constant film 62 as a mask. The etching gas contains CH2F2 or CH3F.
    Type: Grant
    Filed: January 5, 2007
    Date of Patent: March 24, 2009
    Assignee: Tokyo Electron Limited
    Inventors: Takashi Fuse, Kiwamu Fujimoto, Tomoyo Yamaguchi
  • Plasma processing method
    Patent number: 7473377
    Abstract: A plasma processing method includes a step of preparing a process subject having an organic layer on a surface thereof, and a step of irradiating the process subject with H2 plasma to improve plasma resistance of the organic layer.
    Type: Grant
    Filed: October 7, 2004
    Date of Patent: January 6, 2009
    Assignee: Tokyo Electron Limited
    Inventors: Tomoyo Yamaguchi, Takashi Fuse, Kiwamu Fujimoto, Masanobu Honda, Kazuya Nagaseki, Akiteru Koh, Takashi Enomoto, Hiroharu Ito, Akinori Kitamura
  • Method for etching object to be processed
    Patent number: 7432207
    Abstract: An object to be processed has a structure having an SiC film and an organic Si-low dielectric constant film formed on the SiC film. The SiC film is etched using a plasma produced from an etching gas and using the organic Si low-dielectric constant film as a mask. The etching gas contains CH2F2 or CH3F.
    Type: Grant
    Filed: June 10, 2002
    Date of Patent: October 7, 2008
    Assignee: Tokyo Electron Limited
    Inventors: Takashi Fuse, Kiwamu Fujimoto, Tomoyo Yamaguchi
  • METHOD FOR ETCHING AN OBJECT TO BE PROCESSED
    Publication number: 20070111530
    Abstract: An object to be process has a structure having an SiC film 61 and an organic Si-low dielectric constant film 62 formed on the SiC film 61. The SiC film 61 is etched using a plasma produced from an etching gas and using the organic Si low-dielectric constant film 62 as a mask. The etching gas contains CH2F2 or CH3F.
    Type: Application
    Filed: January 5, 2007
    Publication date: May 17, 2007
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: TAKASHI FUSE, Kiwamu Fujimoto, Tomoyo Yamaguchi
  • Method for plasma treatment
    Patent number: 7115519
    Abstract: A method for plasma treatment etches an SiC layer with an increased etching rate and enhanced selectivities of SiC with respect to SiO2 and an organic layer. An etching gas is converted into plasma to etch SiC. The etching gas may include CHF3; CHF3 and N2, for example, a mixed gas of CHF3, N2 and Ar; or a material having C, H and F and a material having N but without any material having O.
    Type: Grant
    Filed: October 15, 2003
    Date of Patent: October 3, 2006
    Assignee: Tokyo Electron Limited
    Inventor: Tomoyo Yamaguchi
  • Plasma processing method
    Publication number: 20050103748
    Abstract: A plasma processing method includes a step of preparing a process subject having an organic layer on a surface thereof, and a step of irradiating the process subject with H2 plasma to improve plasma resistance of the organic layer.
    Type: Application
    Filed: October 7, 2004
    Publication date: May 19, 2005
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Tomoyo Yamaguchi, Takashi Fuse, Kiwamu Fujimoto, Masanobu Honda, Kazuya Nagaseki, Akiteru Koh, Takashi Enomoto, Hiroharu Ito, Akinori Kitamura
  • Method of plasma etching
    Publication number: 20050101140
    Abstract: A plasma etching method includes the steps of exciting an etching gas introduced in a processing vessel into a plasma, the etching gas including 1,1,1,4,4,5,5,5-octafluoro-2-pentyne, and carrying out a plasma etching on a film on a target object accommodated in the processing vessel via opening patterns of a resist mask on the film. Therefore, it is possible to perform plasma etching having a high selectivity to resist and/or suppressing the etch stop.
    Type: Application
    Filed: September 27, 2004
    Publication date: May 12, 2005
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Tomoyo Yamaguchi, Kiwamu Fujimoto, Akinori Kitamura, Jae Jeong, Takashi Fuse, Machiko Obi, Nobuhiro Wada
  • Method for etching object to be processed
    Publication number: 20040206725
    Abstract: An object to be process has a structure having an SiC film 61 and an organic Si-low dielectric constant film 62 formed on the SiC film 61. The SiC film 61 is etched using a plasma produced from an etching gas and using the organic Si low-dielectric constant film 62 as a mask. The etching gas contains CH2F2 or CH3F.
    Type: Application
    Filed: March 1, 2004
    Publication date: October 21, 2004
    Inventors: Takashi Fuse, Kiwamu Fujimoto, Tomoyo Yamaguchi
  • Method for plasma treatment
    Publication number: 20040082185
    Abstract: A method for plasma treatment etches an SiC layer with an increased etching rate and enhanced selectivities of SiC with respect to SiO2 and an organic layer. An etching gas is converted into plasma to etch SiC. The etching gas may include CHF3; CHF3 and N2, for example, a mixed gas of CHF3, N2 and Ar; or a material having C, H and F and a material having N but without any material having O.
    Type: Application
    Filed: October 15, 2003
    Publication date: April 29, 2004
    Applicant: TOKYO ELECTRON LIMTED
    Inventor: Tomoyo Yamaguchi