Patents by Inventor Tomoyoshi Ichimaru
Tomoyoshi Ichimaru has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11355319Abstract: The present invention is a plasma processing apparatus that includes a processing chamber where plasma processing is performed on a sample, a radio frequency power supply that supplies radio frequency power to generate plasma, a sample stage on which the sample is placed, and a gas supply unit that supplies a gas to the processing chamber. The gas supply unit includes a first pipe that supplies a first gas as a gas for etching process to the processing chamber, a second pipe that supplies a second gas as a gas for etching process to the processing chamber, and a third pipe through which a third gas as a gas for deposition process flows. The third pipe is coupled to the second pipe. A fourth valve is arranged on the second pipe. The fourth valve prevents the third gas from flowing in a direction toward a supply source of the second gas.Type: GrantFiled: December 11, 2018Date of Patent: June 7, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Luke Joseph Himbele, Yasushi Sonoda, Takashi Uemura, Tomoyoshi Ichimaru, Junya Sasaki
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Patent number: 11279069Abstract: The manufacturing method of a motor core includes attaching an ID code to a stack of blanked members in which a magnet insertion hole to fill with a resin material is formed, the ID code containing information in accordance with a type of the stack, reading the information from the ID code which is attached to the stack, and setting a mold condition based on the information read from the ID code. The mold condition includes at least one type of condition including: the resin material to be injected to the magnet insertion hole, an injection amount of the resin material, and a discharge position of the resin material. A mold device is controlled to inject the resin material to the magnet insertion hole in accordance with the mold condition.Type: GrantFiled: September 14, 2018Date of Patent: March 22, 2022Inventors: Hisatomo Ishimatsu, Shuhei Kotani, Hirotoshi Mabu, Tomoyoshi Ichimaru
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Publication number: 20190189403Abstract: The present invention is a plasma processing apparatus that includes a processing chamber where plasma processing is performed on a sample, a radio frequency power supply that supplies radio frequency power to generate plasma, a sample stage on which the sample is placed, and a gas supply unit that supplies a gas to the processing chamber. The gas supply unit includes a first pipe that supplies a first gas as a gas for etching process to the processing chamber, a second pipe that supplies a second gas as a gas for etching process to the processing chamber, and a third pipe through which a third gas as a gas for deposition process flows. The third pipe is coupled to the second pipe. A fourth valve is arranged on the second pipe. The fourth valve prevents the third gas from flowing in a direction toward a supply source of the second gas.Type: ApplicationFiled: March 8, 2019Publication date: June 20, 2019Inventors: Luke Joseph HIMBELE, Yasushi SONODA, Takashi UEMURA, Tomoyoshi ICHIMARU, Junya SASAKI
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Publication number: 20190089231Abstract: The manufacturing method of a motor core includes attaching an ID code to a stack of blanked members in which a magnet insertion hole to fill with a resin material is formed, the ID code containing information in accordance with a type of the stack, reading the information from the ID code which is attached to the stack, and setting a mold condition based on the information read from the ID code. The mold condition includes at least one type of condition including: the resin material to be injected to the magnet insertion hole, an injection amount of the resin material, and a discharge position of the resin material. A mold device is controlled to inject the resin material to the magnet insertion hole in accordance with the mold condition.Type: ApplicationFiled: September 14, 2018Publication date: March 21, 2019Applicant: Mitsui High-tec, Inc.Inventors: Hisatomo ISHIMATSU, Shuhei KOTANI, Hirotoshi MABU, Tomoyoshi ICHIMARU
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Patent number: 8580689Abstract: The present invention provides a dry etching method capable of readily providing rounded top edge portions, called top rounds, at trenches and vias formed by removal of a dummy material. The method of the present invention is a dry etching method for forming trenches or vias by removing a dummy material with its periphery surrounded by an interlayer oxide film, which method includes the steps of etching the dummy material to a predetermined depth, performing isotropic etching after the dummy material etching, and removing remaining part of the dummy material after the isotropic etching.Type: GrantFiled: August 16, 2011Date of Patent: November 12, 2013Assignee: Hitachi High-Technologies CorporationInventors: Tomoyoshi Ichimaru, Kenichi Kuwabara, Go Saito
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Publication number: 20130015158Abstract: The present invention provides a dry etching method capable of readily providing rounded top edge portions, called top rounds, at trenches and vias formed by removal of a dummy material. The method of the present invention is a dry etching method for forming trenches or vias by removing a dummy material with its periphery surrounded by an interlayer oxide film, which method includes the steps of etching the dummy material to a predetermined depth, performing isotropic etching after the dummy material etching, and removing remaining part of the dummy material after the isotropic etching.Type: ApplicationFiled: August 16, 2011Publication date: January 17, 2013Inventors: Tomoyoshi Ichimaru, Kenichi Kuwabara, Go Saito
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Patent number: 8143175Abstract: The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein the wiring process is performed without causing disconnection or deflection of the wiring. The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein during a step for etching a material 12 to be etched using a mask pattern composed of a photoresist 15 and inorganic films 14 and 13 made of SiN, SiON, SiO and the like formed on the material 12 to be etched, a mixed gas formed of a halogen-based gas such as chlorine-containing gas or bromine-containing gas and at least one fluorine-containing gas selected from a group of fluorine-containing gases composed of CF4, CHF3, SF6 and NF3 is used to reduce the mask pattern and the processing dimension of the material to be etched substantially equally during processing of the material 12 to be etched.Type: GrantFiled: May 5, 2009Date of Patent: March 27, 2012Assignee: Hitachi High-Technologies CorporationInventors: Satoshi Une, Masamichi Sakaguchi, Kenichi Kuwabara, Tomoyoshi Ichimaru
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Patent number: 7989330Abstract: After etching a polysilicon film, when a protective film made of a carbon polymer is formed on a sidewall of the polysilicon film using plasma containing carbons, a metallic material as a lower film is etched using plasma containing a halogen gas under an etching condition in which volatility is improved due to the rise in a wafer temperature or the low pressure of a processing pressure, thereby preventing a side etching and unevenness of a sidewall of the polysilicon film. Further, by using the protective film made of a carbon polymer, metallic substances scattered at the time of etching the metallic material are not directly attached to the polysilicon film, but can be simply removed along with the protective film made of a carbon polymer in an asking step.Type: GrantFiled: July 30, 2009Date of Patent: August 2, 2011Assignee: Hitachi High-Technologies CorporationInventors: Takeshi Shima, Kenichi Kuwabara, Tomoyoshi Ichimaru, Kenji Imamoto
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Publication number: 20100285669Abstract: After etching a polysilicon film, when a protective film made of a carbon polymer is formed on a sidewall of the polysilicon film using plasma containing carbons, a metallic material as a lower film is etched using plasma containing a halogen gas under an etching condition in which volatility is improved due to the rise in a wafer temperature or the low pressure of a processing pressure, thereby preventing a side etching and unevenness of a sidewall of the polysilicon film. Further, by using the protective film made of a carbon polymer, metallic substances scattered at the time of etching the metallic material are not directly attached to the polysilicon film, but can be simply removed along with the protective film made of a carbon polymer in an asking step.Type: ApplicationFiled: July 30, 2009Publication date: November 11, 2010Inventors: Takeshi SHIMA, Kenichi Kuwabara, Tomoyoshi Ichimaru, Kenji Imamoto
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Publication number: 20090280651Abstract: The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein the wiring process is performed without causing disconnection or deflection of the wiring. The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein during a step for etching a material 12 to be etched using a mask pattern composed of a photoresist 15 and inorganic films 14 and 13 made of SiN, SiON, SiO and the like formed on the material 12 to be etched, a mixed gas formed of a halogen-based gas such as chlorine-containing gas or bromine-containing gas and at least one fluorine-containing gas selected from a group of fluorine-containing gases composed of CF4, CHF3, SF6 and NF3 is used to reduce the mask pattern and the processing dimension of the material to be etched substantially equally during processing of the material 12 to be etched.Type: ApplicationFiled: May 5, 2009Publication date: November 12, 2009Inventors: Satoshi UNE, Masamichi SAKAGUCHI, Kenichi KUWABARA, Tomoyoshi ICHIMARU
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Publication number: 20070218696Abstract: The invention provides a method for processing vertical gate patterns while reducing the Si substrate recess dimension caused by overetching. The invention provides a dry etching method for processing a gate pattern by performing a main etching process (b) and then an overetching process on a gate pattern layer 12 of a semiconductor substrate 10, wherein the overetching process (c) is performed using a composite gas having added to an etching gas containing HBr gas a gas represented by a general formula of CxHy or at least one gas selected from CO and CO2 gases.Type: ApplicationFiled: August 25, 2006Publication date: September 20, 2007Inventors: Kenichi Kuwabara, Satoshi Une, Tomoyoshi Ichimaru, Masamichi Sakaguchi, Naoki Yasui
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Publication number: 20070207618Abstract: The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein the wiring process is performed without causing disconnection or deflection of the wiring. The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein during a step for etching a material 12 to be etched using a mask pattern composed of a photoresist 15 and inorganic films 14 and 13 made of SiN, SiON, SiO and the like formed on the material 12 to be etched, a mixed gas formed of a halogen-based gas such as chlorine-containing gas or bromine-containing gas and at least one fluorine-containing gas selected from a group of fluorine-containing gases composed of CF4, CHF3, SF6 and NF3 is used to reduce the mask pattern and the processing dimension of the material to be etched substantially equally during processing of the material 12 to be etched.Type: ApplicationFiled: August 17, 2006Publication date: September 6, 2007Inventors: Satoshi Une, Masamichi Sakaguchi, Kenichi Kuwabara, Tomoyoshi Ichimaru
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Publication number: 20050189320Abstract: A plasma processing method for performing plasma processing on a sample in accordance with a process recipe with the sample being placed on a sample table in which each of a plurality of areas is temperature-controlled by a temperature controller. The process recipe includes a plurality of temperature setting parameters for the sample table, and the plasma processing is performed on the sample in accordance with the process recipe which is prepared for each of a plurality of process steps.Type: ApplicationFiled: April 25, 2005Publication date: September 1, 2005Inventors: Tomoyoshi Ichimaru, Motohiko Yoshigai, Hideyuki Yamamoto, Shoji Ikuhara, Akira Kagoshima
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Publication number: 20040173311Abstract: Disclosed herein is a plasma processing apparatus and a plasma processing method capable of performing plasma processing by performing temperature control of a sample table in accordance with a process step to be performed on a sample. The plasma processing apparatus performs plasma processing on a sample in accordance with a process recipe with the sample being placed on a sample table in which each of a plurality of areas is temperature-controlled by a temperature control means, wherein the process recipe includes a plurality of temperature setting parameters for the sample table, and the plasma processing is performed on the sample in accordance with the process recipe which is prepared for each of a plurality of process steps.Type: ApplicationFiled: March 4, 2003Publication date: September 9, 2004Inventors: Tomoyoshi Ichimaru, Motohiko Yoshigai, Hideyuki Yamamoto, Shoji Ikuhara, Akira Kagoshima