Abstract: Provided is a composition for cleaning semiconductor substrates, having high removal rate of tungsten oxide with high Ti/W etching selectivity. The composition for cleaning semiconductor substrates, comprising an oxidizing agent (A), a fluorine compound (B), a metallic tungsten corrosion inhibiter (C), and a tungsten oxide etching accelerator (D), wherein the addition ratio of the oxidizing agent (A) is from 0.0001 to 10% by mass relative to the total mass of the composition for cleaning semiconductor substrates; the addition ratio of the fluorine compound (B) is from 0.005 to 10% by mass relative to the total mass of the composition for cleaning semiconductor substrates; and the addition ratio of the metallic tungsten corrosion inhibiter (C) is from 0.0001 to 5% by mass relative to the total mass of the composition for cleaning semiconductor substrates.

Abstract: A recess etching solution for recess etching a metal wiring in a semiconductor substrate manufacturing process; and a recess etching method employing the same. The recess etching solution is for applying recess etching to a surface of a cobalt-containing metal layer embedded in a via or a trench formed in a semiconductor substrate, and contains (A) an organic acid, one of or both of (B) a nitrogen-containing heterocyclic compound and (C) an organic solvent, and (D) water. The recess etching method includes applying recess etching to a surface of a cobalt-containing metal layer by bringing the recess etching solution into contact with the surface of the cobalt-containing metal layer embedded in a via or a trench formed in a semiconductor substrate.

Abstract: The present invention relates to an etching solution being capable of selectively etching a copper/molybdenum-based multilayer thin film with respect to a semiconductor device having an oxide semiconductor layer and a copper/molybdenum-based multilayer thin film, wherein the etching solution comprises (A) hydrogen peroxide, (B) an inorganic acid containing no fluorine atom, (C) an organic acid, (D) an amine compound having 2 to 10 carbon atoms, and having an amino group and at least one group selected from an amino group and a hydroxyl group, (E) an azole, and (F) a hydrogen peroxide stabilizer, and has a pH of 2.5 to 5, as well as an etching method using the etching solution for selectively etching a copper/molybdenum-based multilayer thin film from a semiconductor device having an oxide semiconductor layer and a copper/molybdenum-based multilayer thin film.

Abstract: The present invention provides a liquid composition used for etching a copper- and titanium-containing multilayer film, a method for etching a copper- and titanium-containing multilayer film by using said liquid composition, a method for manufacturing multilayer-film wiring according to said etching method, and a substrate provided with multilayer-film wiring manufactured according to said manufacturing method. According to the present invention, a liquid composition comprising (A) a maleic acid ion source, (B) a copper ion source and (C) a fluoride ion source and having the pH value of 0-7 is used.

Abstract: The present invention provides a liquid composition used for etching a copper- and titanium-containing multilayer film, a method for etching a copper- and titanium-containing multilayer film by using said liquid composition, a method for manufacturing multilayer-film wiring according to said etching method, and a substrate provided with multilayer-film wiring manufactured according to said manufacturing method. According to the present invention, a liquid composition comprising (A) a maleic acid ion source, (B) a copper ion source and (C) a fluoride ion source and having the pH value of 0-7 is used.

Abstract: The present invention provides an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, and a method of using it for etching a multilayer thin film containing a copper layer and a titanium layer, that is, an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, which comprises (A) hydrogen peroxide, (B) nitric acid, (C) a fluoride ion source, (D) an azole, (E) a quaternary ammonium hydroxide and (F) a hydrogen peroxide stabilizer and has a pH of from 1.5 to 2.5, and a etching method of using it.

Abstract: The present invention relates to an etching solution being capable of selectively etching a copper/molybdenum-based multilayer thin film with respect to a semiconductor device having an oxide semiconductor layer and a copper/molybdenum-based multilayer thin film, wherein the etching solution comprises (A) hydrogen peroxide, (B) an inorganic acid containing no fluorine atom, (C) an organic acid, (D) an amine compound having 2 to 10 carbon atoms, and having an amino group and at least one group selected from an amino group and a hydroxyl group, (E) an azole, and (F) a hydrogen peroxide stabilizer, and has a pH of 2.5 to 5, as well as an etching method using the etching solution for selectively etching a copper/molybdenum-based multilayer thin film from a semiconductor device having an oxide semiconductor layer and a copper/molybdenum-based multilayer thin film.

Abstract: The present invention provides an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, and a method of using it for etching a multilayer thin film containing a copper layer and a titanium layer, that is, an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, which comprises (A) hydrogen peroxide, (B) nitric acid, (C) a fluoride ion source, (D) an azole, (E) a quaternary ammonium hydroxide and (F) a hydrogen peroxide stabilizer and has a pH of from 1.5 to 2.5, and a etching method of using it.

Abstract: Discloses are an etching solution for a multilayer thin film having a copper layer and a molybdenum layer contained therein; and an etching method of a multilayer thin film having a copper layer and a molybdenum layer contained therein using the same. Specifically disclosed are an etching solution for a multilayer thin film having a copper layer and a molybdenum layer contained therein, which includes (A) hydrogen peroxide, (B) a fluorine atom-free inorganic acid, (C) an organic acid, (D) an amine compound having a carbon number of from 2 to 10 and having an amino group and a hydroxyl group in a total group number of 2 or more, (E) an azole, and (F) a hydrogen peroxide stabilizer, and which has a pH of from 2.5 to 5; and an etching method using the same.