Patents by Inventor Tomoyuki Akashi

Tomoyuki Akashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor thin film forming system
    Patent number: 7312418
    Abstract: In a semiconductor thin film forming system for modifying a predetermined region of a semiconductor thin film by exposing the semiconductor thin film to a projected light patterned through a pattern formed on a photo mask, the system includes a mechanism (opt20?) for uniformizing the light for exposure in a predetermined area on the photo mask. This system can provide a crystallized silicon film having a trap state density less than 1012 cm?2 and can provide a silicon-insulating film interface exhibiting a low interface state density.
    Type: Grant
    Filed: December 23, 2004
    Date of Patent: December 25, 2007
    Assignees: NEC Corporation, Sumitomo Heavy Industries, Anelva Corporation
    Inventors: Hiroshi Tanabe, Tomoyuki Akashi, Yoshimi Watabe
  • SEMICONDUCTOR THIN FILM FORMING SYSTEM
    Publication number: 20070166945
    Abstract: In a semiconductor thin film forming system for modifying a predetermined region of a semiconductor thin film by exposing the semiconductor thin film to a projected light patterned through a pattern formed on a photo mask, the system includes a mechanism (opt20?) for uniformizing the light for exposure in a predetermined area on the photo mask. This system can provide a crystallized silicon film having a trap state density less than 1012 cm?2 and can provide a silicon-insulating film interface exhibiting a low interface state density.
    Type: Application
    Filed: February 23, 2007
    Publication date: July 19, 2007
    Inventors: Hiroshi TANABE, Tomoyuki Akashi, Yoshimi Watabe
  • Semiconductor thin film forming system
    Publication number: 20050109743
    Abstract: In a semiconductor thin film forming system for modifying a predetermined region of a semiconductor thin film by exposing the semiconductor thin film to a projected light patterned through a pattern formed on a photo mask, the system includes a mechanism (opt20?) for uniformizing the light for exposure in a predetermined area on the photo mask. This system can provide a crystallized silicon film having a trap state density less than 1012 cm?2 and can provide a silicon-insulating film interface exhibiting a low interface state density.
    Type: Application
    Filed: December 23, 2004
    Publication date: May 26, 2005
    Inventors: Hiroshi Tanabe, Tomoyuki Akashi, Yoshimi Watabe
  • S system for the formation of a silicon thin film and a semiconductor-insulating film interface
    Patent number: 6861614
    Abstract: In a semiconductor thin film forming system for modifying a predetermined region of a semiconductor thin film by exposing the semiconductor thin film to a projected light patterned through a pattern formed on a photo mask, the system includes a mechanism (opt20?) for uniformizing the light for exposure in a predetermined area on the photo mask. This system can provide a crystallized silicon film having a trap state density less than 1012 cm?2 and can provide a silicon-insulating film interface exhibiting a low interface state density.
    Type: Grant
    Filed: July 7, 2000
    Date of Patent: March 1, 2005
    Assignees: NEC Corporation, Sumitomo Heavy Industries, Ltd., Anelva Corporation
    Inventors: Hiroshi Tanabe, Tomoyuki Akashi, Yoshimi Watabe
  • Apparatus for producing a semiconductor thin film
    Patent number: 6680460
    Abstract: In a semiconductor thin film producing apparatus for irradiating a semiconductor thin film by a laser beam through an aperture pattern formed in a mask to reform the semiconductor thin film, the mask has a reflecting surface having a reflectance not smaller than 70% with respect to the laser beam. An absorbing substrate is arranged at a position before the laser beam is irradiated onto the mask. The absorbing substrate is for locally absorbing the laser beam and is for absorbing a reflected beam which is reflected by the reflecting surface of the mask when the laser beam is irradiated onto the reflecting surface of the mask.
    Type: Grant
    Filed: August 16, 2000
    Date of Patent: January 20, 2004
    Assignees: NEC Corporation, Sumitomo Heavy Industries, Ltd.
    Inventors: Hiromichi Takaoka, Tomoyuki Akashi