Abstract: A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1?) containing an acid dissociable, dissolution inhibiting group within the structure thereof and including a structural unit (a0) represented by general formula (a0-1) (R2 represents a divalent linking group, and A? represents an oxygen atom, a sulfur atom, or an alkylene group of 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom) and a structural unit (a2) derived from an acrylate ester containing a lactone-containing cyclic group; or a polymeric compound (Al) including the structural unit (a0) and a structural unit (al) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group.

Abstract: A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1) (R2 represents a divalent linking group, and R3 represents a cyclic group containing —SO2— within the ring skeleton thereof) and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group.

Abstract: A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the resin component (A) including at least one structural unit (a0) selected from the group consisting of a structural unit represented by general formula (a0-1) [R2 represents a divalent linking group, and R3 represents a cyclic group containing —SO2— within the ring skeleton thereof] and a structural unit (a2) derived from an acrylate ester containing a lactone-containing cyclic group, and the polymeric compound (A1) containing an acid dissociable, dissolution inhibiting group within the structure thereof.

Abstract: A semiconductor device has an insulated gate transistor provided with a semiconductor substrate and a gate electrode arranged on the semiconductor substrate via a gate insulating film. The gate electrode includes an electrically-conductive buffer film for preventing any damage, which would occur if a main gate electrode portion were formed directly over the gate insulating film, and the main gate electrode portion formed over the buffer film. A fabrication process for the semiconductor device is also disclosed.

Abstract: A negative resist composition including an alkali-soluble resin component (A), an acid generator component (B) that generates acid upon exposure, and a cross-linking component (C), the alkali-soluble resin component (A) including a polymeric compound (F) having a structural unit (f1) containing a base dissociable group and a structural unit (f2) containing a cross-linking group-containing group.

Abstract: A resist composition for immersion exposure including: a fluorine-containing polymeric compound (F) containing a structural unit (f1) having a base dissociable group and a structural unit (f2) represented by general formula (f2-1) (wherein R represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; and W is a group represented by any one of general formulas (w-1) to (w-4)); a base component (A) that exhibits changed solubility in an alkali developing solution under the action of acid; and an acid generator component (B) that generates acid upon exposure.

Abstract: A method of producing an insulator thin film, for forming a thin film on a substrate by use of the atomic layer deposition process, includes a first step of forming a silicon atomic layer on the substrate and forming an oxygen atomic layer on the silicon atomic layer, and a second step of forming a metal atomic layer on the substrate and forming an oxygen atomic layer on the metal atomic layer, wherein the concentration of the metal atoms in the insulator thin film is controlled by controlling the number of times the first step and the second step are carried out.

Abstract: To provide a material for protective film formation that can simultaneously prevent a change in quality of a resist film during liquid immersion exposure and a change in quality of a liquid for liquid immersion exposure used, and, at the same time, can form a resist pattern having a good shape without increasing the number of treatment steps. A material for protective film formation, comprising at least an alkali-soluble polymer comprising constitutional units represented by general formula (1): wherein R1 represents a hydrogen atom or a methyl group; R2 represents an alkylene chain having 1 to 5 carbon atoms; R3 represents a fluorinated alkylene chain having 1 to 10 carbon atoms in which a part or all of hydrogen atoms have been substituted by a fluorine atom; and m is a repeating unit.

Abstract: A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) having a structural unit (a0-1) represented by general formula (a0-1) (wherein R1 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; R8 represents a divalent linking group; and R7 represents an acid dissociable, dissolution inhibiting group) and a structural unit (a0-2) represented by general formula (a0-2) (wherein R3 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; R4 represents a branched alkyl group of 3 or more carbon atoms; and each of R5 and R6 independently represents an alkyl group, wherein R5 and R6 are mutually bonded to form a ring).

Abstract: A method for manufacturing a semiconductor device, includes the steps of forming a dummy gate insulating film and a dummy gate electrode, forming source and drain regions, forming a first insulating film, forming a second insulating film, removing the second insulating film, simultaneously removing the first insulating film and the second insulating film that remains, while planarizing the first insulating film and the second insulating film that remains, forming a gate electrode trench by removing the dummy gate electrode and the dummy gate insulating film, forming a gate insulating film, and forming a gate electrode, wherein a field effect transistor is formed by the method.

Abstract: There is provided a positive resist composition, including a base component (A) which exhibits increased solubility in an alkali developing solution under action of an acid, and an acid generator component (B) which generates an acid upon exposure, wherein the base component (A) includes a polymeric compound (A1) containing a structural unit (a0) represented by the general formula (a0-1) shown below: (wherein, R1 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; A represents a bivalent linking group; B represents a bivalent linking group; and R2 represents an acid dissociable, dissolution inhibiting group).

Abstract: A method for manufacturing a solid-state imaging device in which a charge generator that detects an electromagnetic wave and generates signal charges is formed on a semiconductor substrate and a negative-charge accumulated layer having negative fixed charges is formed above a detection plane of the charge generator, the method includes the steps of: forming an oxygen-feed film capable of feeding oxygen on the detection plane of the charge generator; forming a metal film that covers the oxygen-feed film on the detection plane of the charge generator; and performing heat treatment for the metal film in an inactive atmosphere to thereby form an oxide of the metal film between the metal film and the oxygen-feed film on the detection plane of the charge generator, the oxide being to serve as the negative-charge accumulated layer.

Abstract: In the liquid immersion lithography process, by simultaneously preventing deterioration of a resist film and deterioration of an immersion liquid employed during liquid immersion lithography which uses various immersion liquids, including water, resistance to post exposure delay of the resist film can be improved without increasing the number of processes, thereby making it possible to form a high resolution resist pattern using liquid immersion lithography. Using an alkaline soluble polymer, a crosslinking agent, and a solvent capable of dissolving them as at least constituent component, a composition is prepared and a protective film is formed on the surface of the resist film to be used, using the composition.

Abstract: A resist composition for immersion exposure, including a base component (A) that exhibits changed solubility in an alkali developing solution under action of acid, an acid generator component (B) that generates acid upon exposure, and a fluorine-containing compound (C) represented by a general formula (c-1) shown below that is decomposable in an alkali developing solution: wherein R1 represents an organic group which may contain a polymerizable group, with the proviso that said polymerizable group has a carbon-carbon multiple bond, and the carbon atoms forming the multiple bond are not directly bonded to the carbon atom within the —C(?O)— group in general formula (c-1); and R2 represents an organic group having a fluorine atom.

Abstract: The present invention provides a solid-state imaging element including: a silicon layer having a photodiode formed therein and a positive charge accumulation region formed on the surface thereof; and an optical waveguide formed above the photodiode to guide incident light into the photodiode, wherein an insulating layer is formed in the optical waveguide, and the insulating layer has a dielectric constant of 5 or greater and negative fixed charge.

Abstract: A resist composition for immersion exposure including a base component (A) that exhibits changed solubility in an alkali developing solution under the action of acid, an acid generator component (B) that generates acid upon exposure, and a fluorine-containing copolymer (C) containing a structural unit (c1) represented by general formula (c1-1) shown below. In the formula, R1 represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group, Q1 represents a single bond or a divalent linking group, A represents an aromatic cyclic group that may have a substituent, Q2 represents a group in which one hydrogen atom has been removed from a monovalent hydrophilic group, R2 represents a base dissociable group, and a represents 1 or 2, provided that at least one among A and the a R2 groups contains a fluorine atom.

Abstract: A fluorine-containing compound represented by a general formula (c-1) shown below: RX-AN-(OR2)a ??[Chemical Formula 1] (c-1) [wherein, RX represents an organic group, AN represents a naphthalene ring that may have a substituent, R2 represents a base dissociable group, and a represents 1 or 2, provided that at least one among AN and said a R2 groups contains a fluorine atom].

Abstract: A method of producing an insulator thin film, for forming a thin film on a substrate by use of the atomic layer deposition process, includes a first step of forming a silicon atomic layer on the substrate and forming an oxygen atomic layer on the silicon atomic layer, and a second step of forming a metal atomic layer on the substrate and forming an oxygen atomic layer on the metal atomic layer, wherein the concentration of the metal atoms in the insulator thin film is controlled by controlling the number of times the first step and the second step are carried out.

Abstract: It is intended to in a liquid-immersion exposure process, simultaneously prevent any degeneration, represented by bridge, etc., of resist film during the liquid-immersion exposure using water and other various liquid-immersion exposure liquids and any degeneration of liquid-immersion exposure liquids per se, and to without increasing of the number of treatment steps, realize enhancing of the post-exposure storage stability of resist film, and to enable forming of a resist pattern of high resolution through liquid-immersion exposure.

Abstract: A resist composition for immersion exposure including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid, an acid-generator component (B) which generates acid upon irradiation, and a fluorine-containing compound (C) having a group represented by general formula (c) shown below and containing at least one fluorine atom: wherein Q represents a group in which one hydrogen atom has been removed from a monovalent hydrophilic group; and R1 represents a hydrocarbon group of 2 or more carbon atoms which may have a fluorine atom.