Abstract: According to one exemplary embodiment, a method of manufacturing a semiconductor device is provided, the method including: dry-etching an aluminum film containing silicon with a first etching gas containing halogen to decrease the thickness of the aluminum film; and dry-etching the aluminum film with a second etching gas containing inert gas.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes dry-etching a member containing silicon in a first pressure range equal to or more than a first pressure or in a second pressure range equal to or less than a second pressure, wherein the first pressure is obtained by multiplying a saturated pressure by 0.85, the saturated pressure is defined as a pressure under which an etching rate is one of a maximum value or a value obtained by multiplying the maximum value by a predetermined coefficient, and the etching rate is a half value of the maximum value under the second pressure.

Abstract: A method for manufacturing a semiconductor device includes forming first wirings assigned in a first region and second wirings assigned in a second region having a lower wiring density than the first region; covering the first and second wirings with a sacrificial film; reducing a thickness of the sacrificial film until surfaces of the first and second wirings expose; selectively removing the sacrificial film in the second region; depositing a first insulating film on the first and second wirings; and removing the sacrificial film in the first region, so as to form an air gap between the first wirings below the first insulating film.

Abstract: To improve electromigration resistance and stress migration resistance, when a film is formed by depositing Al or Al alloy on a semiconductor substrate, the film is formed stepwise by stepwise changing the heating temperature of the semiconductor substrate at at least two stages.