Abstract: The present invention addresses the problem of: realizing a TFT that uses an oxide semiconductor and that is capable of maintaining stable characteristics even in the case where the TFT is miniaturized; and realizing a display device that has high-definition pixels using such a TFT. To solve this problem, the present invention has the following configuration. A semiconductor device including an oxide semiconductor TFT formed using an oxide semiconductor film 109, the semiconductor device being characterized in that: the channel length of the oxide semiconductor TFT is 1.3 to 2.3 ?m; and the sheet resistance of a source region 1092 and a drain region 1091 of the oxide semiconductor film 109 is 1.4 to 20 K?/?.

Abstract: A method may produce an antibody through machine learning. Such a method of producing an antibody may be optimized for a plurality of characteristics including at least two of an expression level, binding activity, stability, and solubility; and the like. Such a method may include: (1) providing a library comprising mutants prepared by modifying at least some of residues not being an amino acid of the highest appearance frequency in a group of antibody sequences of a target antibody into the amino acid of the highest appearance frequency; (2) determining respective characteristic values indicating the plurality of characteristics of some mutants in the library, and scoring the characteristic values as one value per mutant by normalizing and integrating the characteristic values; (3) conducting machine learning using the score values and ranking the mutants; and (4) selecting an antibody optimized for the plurality of characteristics based on ranking results.

Abstract: A method for producing a nucleic acid library. The method includes: preparing, by a phage display method, a first library composed of mutants obtained by randomly introducing a mutation into a nucleic acid sequence encoding a protein bound to or configured to be bound to a target; performing biopanning on the first library and obtaining data to be used for machine learning from an obtained sublibrary; and performing machine learning using the data and obtaining a second library from the first library based on machine learning prediction. The data to be used for machine learning includes a sequence of a mutant population included in a sublibrary at a target-binding sequence elution stage, an estimated binding strength to the target, and an actual measurement value of binding of some mutants included in the mutant population to the target.

Abstract: The present invention relates to a method of producing a protein for which two or more characteristics are optimized simultaneously. More specifically, the present invention relates to a method of producing a protein for which two or more characteristics are optimized, the method comprising: 1) providing a library comprising mutants from random mutation of a target protein; 2) determining respective characteristic values that indicate the two or more characteristics of some of the mutants in the library, and scoring the two or more characteristic values as one value per mutant by normalizing and integrating the characteristic values; 3) conducting machine learning by using the score values and ranking the library; and 4) selecting a protein for which two or more characteristics are optimized, based on the ranking results, wherein the two or more characteristic values are numerical values based on different measurement data related to respective different characteristics.

Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

Abstract: A display device includes a first nitride insulating film arranged on a first substrate, a gate electrode arranged along a first direction on the first nitride insulating film, a second nitride insulating film arranged on the gate electrode, a first oxide insulating film arranged on the second nitride insulating film, and an oxide semiconductor layer arranged on the first oxide insulating film, wherein the gate electrode has a first titanium layer, an aluminum layer, and a second titanium layer stacked in order from the first nitride insulating film side, and a thickness of the second titanium layer is greater than a thickness of the first titanium layer.

Abstract: A display device includes a wiring region including a gate wiring, a source wiring intersecting the gate wiring, and a first insulating layer between the gate wiring and the source wiring and an opening region including a pixel electrode on the first insulating layer and adjacent to the wiring region. The first insulating layer includes a first oxide insulating layer and a first nitride insulating layer, the first oxide insulating layer is disposed over the wiring region and the opening region, the first nitride insulating layer is disposed in the wiring region and includes a first opening overlapping the opening region, and the pixel electrode overlaps the first opening.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device, includes forming a first insulating film which covers a gate electrode, forming an island-shaped oxide semiconductor in contact with the first insulating film, forming a second insulating film which covers the oxide semiconductor, forming a source electrode in contact with the oxide semiconductor, forming a drain electrode in contact with the oxide semiconductor, forming a third insulating film which covers the source electrode and the drain electrode and forming a channel region between the source electrode and the drain electrode by supplying oxygen from the third insulating film to the oxide semiconductor via the second insulating film.

Abstract: A display device includes a first nitride insulating film arranged on a first substrate, a gate electrode arranged along a first direction on the first nitride insulating film, a second nitride insulating film arranged on the gate electrode, a first oxide insulating film arranged on the second nitride insulating film, and an oxide semiconductor layer arranged on the first oxide insulating film, wherein the gate electrode has a first titanium layer, an aluminum layer, and a second titanium layer stacked in order from the first nitride insulating film side, and a thickness of the second titanium layer is greater than a thickness of the first titanium layer.

Abstract: A display device includes a wiring region including a gate wiring, a source wiring intersecting the gate wiring, and a first insulating layer between the gate wiring and the source wiring and an opening region including a pixel electrode on the first insulating layer and adjacent to the wiring region. The first insulating layer includes a first oxide insulating layer and a first nitride insulating layer, the first oxide insulating layer is disposed over the wiring region and the opening region, the first nitride insulating layer is disposed in the wiring region and includes a first opening overlapping the opening region, and the pixel electrode overlaps the first opening.

Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

Abstract: A power storage device includes power storage cells that are stacked in a stacking direction, and a temperature sensor configured to measure a temperature of at least one power storage cell to be measured among the power storage cells. Each of the power storage cells includes a positive electrode that includes a first current collector, and a positive electrode active material layer, a negative electrode that includes a second current collector, and a negative electrode active material layer, a separator that is arranged between the positive electrode and the negative electrode, and a sealing portion—that surrounds and seals the positive electrode active material layer and the negative electrode active material layer.

Abstract: According to one embodiment, a detection device comprises a base, a sensor layer, a collimator, a plurality of lenses, and a spacer. The sensor layer is placed on the base and includes a plurality of sensors which output detection signals corresponding to incident light. The collimator layer is placed on the sensor layer and includes a collimator having a plurality of openings which overlap the sensors, respectively. The plurality of lenses are placed on the collimator layer and overlap the openings, respectively. The spacer protrudes more than the lenses in a stacking direction of the base, the sensor layer and the collimator layer.

Abstract: An optical transmission module includes a photonic integrated circuit, a processor that controls the power state of the photonic integrated circuit, and a current source circuit that supplies electric current to a light source used for the photonic integrated circuit. The photonic integrated circuit has an optical multiplexer block including a plurality of multiplexers connected in a n-level tree structure (n is an integer greater than 1), 2{circumflex over (?)}n optical modulators connected to inputs of the optical multiplexer block, and a photodetector connected to an input or an output of each of the plurality of the multiplexers. The light source emits a light beam to be incident onto a corresponding one of the 2{circumflex over (?)}n optical multiplexers. The processor controls the current source circuit for each of the plurality of the multiplexers, based on the monitored value acquired from the photodetector provided to each of the plurality of the multiplexers.

Abstract: According to one embodiment, a semiconductor device includes a first gate electrode formed to be integrated with a scanning line, an oxide semiconductor layer, a first signal line and a second signal line in contact with the oxide semiconductor layer, and a second gate electrode disposed opposing the first gate electrode with the oxide semiconductor layer interposed therebetween, and connected to the first gate electrode, wherein the second gate electrode does not overlap the first signal line, but overlaps the second signal line.

Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

Abstract: A photodiode array is provided and includes insulating substrate; photodiodes arrayed in detection region of insulating substrate, photodiodes configured to output signal in accordance with light incident on photodiodes; first switching elements corresponding to photodiodes and including first semiconductor made of oxide semiconductor; gate lines coupled with first switching elements and extending in first direction; signal lines coupled with first switching elements and extending in second direction intersecting first direction; and gate line drive circuit including second switching element that includes second semiconductor made of polycrystalline silicone, gate line drive circuit being provided in peripheral region outside detection region and configured to drive gate lines, wherein photodiodes includes translucent conductive layer that is cathode, and translucent conductive layer overlaps none of signal lines in plan view.

Abstract: An information processing apparatus includes a display control section that displays a relation diagram expressing logical relationships between events from an upstream side to a downstream side, displays, in a case where an instruction of folding is performed on a plurality of events selected as folding starting points from among the events, the relation diagram in which events on the downstream side of the plurality of selected events are folded, and displays, in a case where an instruction of expanding is performed on the relation diagram in a folded state, the relation diagram expanded in a state before the folding.

Abstract: According to one embodiment, an optical sensor includes a display panel and a sensor panel under at least a part of the display panel. The display panel includes pixels arranged two-dimensionally. The sensor panel includes a sensor layer including sensor elements arranged two-dimensionally, a collimator layer on the sensor layer including openings, and lenses on the collimator layer. A first number of openings in the openings are on one of the sensor elements. The first number of lenses in the lenses are on the first number of openings. The first number of lenses are at positions different for each of the sensor elements.

Abstract: According to one embodiment, a display device comprises a collimating layer including first to third openings, first to third color filters overlaid on the first to third openings, respectively, a first sensor outputting a first detection signal corresponding to light made incident through the first opening and the first color filter, a second sensor outputting a second detection signal corresponding to light made incident through the second opening and the second color filter, and a third sensor outputting a third detection signal corresponding to light made incident through the third opening and the third color filter.