Abstract: A method of making a microelectronic package includes forming a dielectric encapsulation layer on an in-process unit having a substrate having a first surface and a second surface remote therefrom. A microelectronic element is mounted to the first surface of the substrate, and a plurality of conductive elements exposed at the first surface, at least some of which are electrically connected to the microelectronic element. Wire bonds have bases joined to the conductive elements and end surfaces remote from the bases and define an edge surface extending away between the base and the end surface. The encapsulation layer is formed to at least partially cover the first surface and portions of the wire bonds with unencapsulated portions of the wire bonds being defined by at least one of the end surface or a portion of the edge surface that is uncovered thereby.

Abstract: A method of making a microelectronic package includes forming a dielectric encapsulation layer on an in-process unit having a substrate having a first surface and a second surface remote therefrom. A microelectronic element is mounted to the first surface of the substrate, and a plurality of conductive elements exposed at the first surface, at least some of which are electrically connected to the microelectronic element. Wire bonds have bases joined to the conductive elements and end surfaces remote from the bases and define an edge surface extending away between the base and the end surface. The encapsulation layer is formed to at least partially cover the first surface and portions of the wire bonds with unencapsulated portions of the wire bonds being defined by at least one of the end surface or a portion of the edge surface that is uncovered thereby.

Abstract: A barrier film including a plurality of cured layers each cured layer including a curing product of a polysilazane photocurable precursor, an uncured layer disposed between a first and a second cured layer of the plurality of cured layers, the uncured layer including the polysilazane photocurable precursor, and a gradient composition layer disposed between the first and the second cured layer and the uncured layer, wherein a concentration of the polysilazane photocurable precursor in the gradient composition layer increases with a distance from the first and the second cured layers toward the uncured layer.

Abstract: A microelectronic assembly includes a substrate having a first surface and a second surface remote from the first surface. A microelectronic element overlies the first surface and first electrically conductive elements are exposed at one of the first surface and the second surface. Some of the first conductive elements are electrically connected to the microelectronic element. Wire bonds have bases joined to the conductive elements and end surfaces remote from the substrate and the bases, each wire bond defining an edge surface extending between the base and the end surface. An encapsulation layer extends from the first surface and fills spaces between the wire bonds such that the wire bonds are separated by the encapsulation layer. Unencapsulated portions of the wire bonds are defined by at least portions of the end surfaces of the wire bonds that are uncovered by the encapsulation layer.

Abstract: A method for manufacturing a semiconductor device including, forming a first insulating film above a silicon substrate, forming an impurity layer in the first insulating film by ion-implanting impurities into a predetermined depth of the first insulating film, and modifying the impurity layer to a barrier insulating film by annealing the first insulating film after the impurity layer is formed, is provided.

Abstract: A method of producing a gas barrier laminate comprises: the steps of forming an inorganic compound layer on a substrate by vapor-phase film deposition, applying surface roughening treatment to a surface of the inorganic compound layer, and subsequently forming an organic compound layer on the roughened surface of the inorganic compound layer by flash evaporation.

Abstract: A microelectronic assembly includes a substrate having a first surface and a second surface remote from the first surface. A microelectronic element overlies the first surface and first electrically conductive elements are exposed at one of the first surface and the second surface. Some of the first conductive elements are electrically connected to the microelectronic element. Wire bonds have bases joined to the conductive elements and end surfaces remote from the substrate and the bases, each wire bond defining an edge surface extending between the base and the end surface. An encapsulation layer extends from the first surface and fills spaces between the wire bonds such that the wire bonds are separated by the encapsulation layer. Unencapsulated portions of the wire bonds are defined by at least portions of the end surfaces of the wire bonds that are uncovered by the encapsulation layer.

Abstract: The present invention provides a method of manufacturing a color filter, including: forming a first color pattern in a repeating pattern on a support; forming, on the support, a second color pattern in a repeating pattern in regions where the first color pattern is not formed; removing at least one portion of one of the first color pattern and the second color pattern by dry-etching, the portion being in a region where a third color pattern is to be formed; and forming, on the support, the third color pattern in the region where the portion of one of the first color pattern and the second color pattern has been removed. The present invention also provides a color filter manufactured by the method, and a solid-state image pickup element using the color filter.

Abstract: A semiconductor element comprises: a semiconductor substrate; and an amorphous metal oxide film as a first film deposited on the semiconductor substrate. By providing the amorphous metal oxide film as the first film, a recess with a large aspect ratio can be filled. As a result, a void/crack-free film of excellent quality can be formed.

Abstract: A gas barrier laminate film including an organic compound layer and an oxide inorganic compound layer and having both excellent gas barrier properties and durability. The gas barrier laminate film comprises an organic compound layer, a silicon atom-containing compound layer on the organic compound layer, and an inorganic compound oxide layer on the silicon atom-containing compound layer.

Abstract: A method of producing a gas barrier laminate comprises: the steps of forming an inorganic compound layer on a substrate by vapor-phase film deposition, applying surface roughening treatment to a surface of the inorganic compound layer, and subsequently forming an organic compound layer on the roughened surface of the inorganic compound layer by flash evaporation.

Abstract: A gas barrier film includes two or more laminates formed on a substrate. each laminate has a organic layer and a inorganic layer stacked in this order. The organic layer directly formed on the substrate includes a (meth)acrylic compound having a glass transition temperature of at least 200° C. and a C—C bond density in the monomer of at least 0.19, and has a thickness of at least 300 nm but less than 1000 nm, and the other organic layer includes a (meth)acrylic compound having a glass transition temperature of at least 105° C. and a C—C bond density in the monomer of at least 0.19, and has a thickness of at least 50 nm but less than 300 nm. The inorganic layers are formed by plasma-enhanced film deposition. A producing method produces the gas barrier film using the plasma-enhanced film deposition.

Abstract: A method for manufacturing a semiconductor device including, forming a first insulating film above a silicon substrate, forming an impurity layer in the first insulating film by ion-implanting impurities into a predetermined depth of the first insulating film, and modifying the impurity layer to a barrier insulating film by annealing the first insulating film after the impurity layer is formed, is provided.

Abstract: A semiconductor element comprises: a semiconductor substrate; and an amorphous metal oxide film as a first film deposited on the semiconductor substrate. By providing the amorphous metal oxide film as the first film, a recess with a large aspect ratio can be filled. As a result, a void/crack-free film of excellent quality can be formed.

Abstract: The present invention provides a method of manufacturing a color filter, including: forming a first color pattern in a repeating pattern on a support; forming, on the support, a second color pattern in a repeating pattern in regions where the first color pattern is not formed; removing at least one portion of one of the first color pattern and the second color pattern by dry-etching, the portion being in a region where a third color pattern is to be formed; and forming, on the support, the third color pattern in the region where the portion of one of the first color pattern and the second color pattern has been removed. The present invention also provides a color filter manufactured by the method, and a solid-state image pickup element using the color filter.

Abstract: A method for manufacturing a semiconductor device including, forming a first insulating film above a silicon substrate, forming an impurity layer in the first insulating film by ion-implanting impurities into a predetermined depth of the first insulating film, and modifying the impurity layer to a barrier insulating film by annealing the first insulating film after the impurity layer is formed, is provided.