Abstract: A non-contact operating apparatus, for a vehicle, includes a generating unit, a projecting device, a detecting device, and a setting unit. The generating unit is configured to generate and update an image containing an image object. The image object is operable by an occupant present within a vehicle compartment of the vehicle. The projecting device is configured to project the image in a predetermined display region within the vehicle compartment of the vehicle. The detecting device is configured to detect a riding state of the occupant who is present in the vehicle compartment of the vehicle. The setting unit is configured to instruct the projecting device or the generating unit to project the image at a position at which the image object is operable by the occupant who is in the riding state detected by the detecting device.

Abstract: A non-contact operating apparatus, for a vehicle, includes a generating unit, a projecting device, an operation detecting device, an operation determining unit, and a motion detecting device. The generating unit is configured to generate and update an image containing an image object. The image object is operable by an occupant present within a vehicle compartment. The projecting device is configured to project the image in a predetermined display region. The operation detecting device is configured to detect an operation site of the occupant. The motion detecting device is configured to detect motion of the vehicle. The operation determining unit is configured to adjust a detection result of the operation detecting device to suppress the motion of the occupant on the basis of a detection result of the motion detecting device, and determine presence or absence of the operation against the image object by the operation site.

Abstract: In a differential scanning calorimetric curve of an Al—Mg—Si aluminum alloy sheet with a specific composition in which the total content of Mg and Si is greater than 1.2%, a ratio (B/A) of an endothermic peak within the temperature range of 150-230° C. with a height A of 3-10 ?W/mg to an exothermic peak within the temperature range of 230° C. or above and below 330° C. with a height B of 20-50 ?W/mg is to be within a specified range.

Abstract: A method for producing an aluminum joined body includes a step in which a second aluminum member is superimposed on a first aluminum member to form a lap joint, the second aluminum member having a higher electrical conductivity than the first aluminum member; and a beam welding step in which a high-energy beam is impinged on a side of the lap joint on which the second aluminum member is located in order to form a fusion-solidification zone that penetrates the lap joint.

Abstract: A broad area semiconductor laser device is provided having an NFP with top hat shaped profiles for the P wave and the S wave, which result from polarized beam splitting of the emitted light. The broad area semiconductor laser device of the present invention has the same structure as the broad area semiconductor laser device of the prior art, except that the composition of an etch stop layer is different. The semiconductor laser device includes an n-Al0.5Ga0.5As first clad layer, an active layer including an AlGaAs optical guide layer and an AlGaAs quantum well layer, a 0.3 ?m thick p-Al0.5G0.5As lower second clad layer, an Al0.7Ga0.3As etch stop layer, a p-Al0.5Ga0.5As upper second clad layer, and a p-GaAs contact layer, which form a laminated structure on top of an n-GaAs substrate.

Abstract: A broad area semiconductor laser device having an NFP with top hat shaped profiles for the P wave and the S wave, which result from polarized beam splitting of the emitted light, is provided. The broad area semiconductor laser device of the present invention has the same structure as the broad area semiconductor laser device of the prior art, except that the composition of an etch stop layer is different. The semiconductor laser device includes an n-Al0.5Ga0.5As first clad layer; an active layer including an AlGaAs optical guide layer and an AlGaAs quantum well layer; a 0.3 &mgr;m thick p-Al0.5Ga0.5As lower second clad layer; an Al0.7Ga0.3As etch stop layer; a p-Al0.5Ga0.5As upper second clad layer; and a p-GaAs contact layer, which form a laminated structure on top of an n-GaAs substrate.

Abstract: To stabilize the near field pattern (NFP) in a semiconductor laser emitting apparatus which emits a laser beam in a multi-lateral mode and extend the application fields of the apparatus. A semiconductor laser emitting apparatus, which emits a laser beam in a multi-lateral mode, and comprises a cladding layer in a stripe form formed on an active layer, wherein a current injection region of the semiconductor laser emitting apparatus has a difference in optical absorption loss between the inside and the outside of the current injection region, wherein the cladding layer disposed on the outside of the current injection region is formed so as to have a thickness of 0.7 &mgr;m or less.

Abstract: To stabilize the near field pattern (NFP) in a semiconductor laser emitting apparatus which emits a laser beam in a multi-lateral mode and extend the application fields of the apparatus. A semiconductor laser emitting apparatus, which emits a laser beam in a multi-lateral mode, and comprises a cladding layer in a stripe form formed on an active layer, wherein a current injection region of the semiconductor laser emitting apparatus has a difference in optical absorption loss between the inside and the outside of the current injection region, wherein the cladding layer disposed on the outside of the current injection region is formed so as to have a thickness of 0.7 &mgr;m or less.