Patents by Inventor Tomoyuki Kumamaru

Tomoyuki Kumamaru has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8265823
    Abstract: In order to suppress an instantaneous carrying current (surge current) and power supply noise caused by the instantaneous carrying current (the surge current), the power supply cutoff structure of a semiconductor integrated circuit device comprises a switching circuit for controlling a power supply to a controlled circuit. The switching circuit includes a plurality of transistors each having a different current capability. The transistors are sequentially provided with a certain regularity, including from a low current capability transistor up to a high current capability transistor.
    Type: Grant
    Filed: September 22, 2008
    Date of Patent: September 11, 2012
    Assignee: Panasonic Corporation
    Inventor: Tomoyuki Kumamaru
  • Publication number: 20100194468
    Abstract: In order to suppress an instantaneous carrying current (surge current) and power supply noise caused by the instantaneous carrying current (the surge current), the power supply cutoff structure of a semiconductor integrated circuit device comprises a switching circuit for controlling a power supply to a controlled circuit. The switching circuit includes a plurality of transistors each having a different current capability. The transistors are sequentially provided with a certain regularity, including from a low current capability transistor up to a high current capability transistor.
    Type: Application
    Filed: September 22, 2008
    Publication date: August 5, 2010
    Inventor: Tomoyuki Kumamaru
  • Patent number: 7733690
    Abstract: A semiconductor integrated circuit comprising a data holding circuit sets the data holding circuit to a desired data state by first setting the power-supply voltage of the data holding circuit to be less than a specified voltage, and then setting the power-supply voltage of the data holding circuit to the specified voltage or greater, regardless of the data state that is stored beforehand in the data holding circuit.
    Type: Grant
    Filed: July 20, 2007
    Date of Patent: June 8, 2010
    Assignee: Panasonic Corporation
    Inventor: Tomoyuki Kumamaru
  • Publication number: 20080025075
    Abstract: A semiconductor integrated circuit comprising a data holding circuit sets the data holding circuit to a desired data state by first setting the power-supply voltage of the data holding circuit to be less than a specified voltage, and then setting the power-supply voltage of the data holding circuit to the specified voltage or greater, regardless of the data state that is stored beforehand in the data holding circuit.
    Type: Application
    Filed: July 20, 2007
    Publication date: January 31, 2008
    Inventor: Tomoyuki Kumamaru
  • Patent number: 6727743
    Abstract: In a static circuit or the like, upper and lower terminals are both set to a first power supply potential Vdd1 in the operating state of an inverter circuit. In the non-operating state, the power supply potential of the upper terminal is reduced to a second power supply potential Vdd2 (<<Vdd1). Provided that an input signal of the inverter circuit has a potential Vdd2 (H level), an output signal thereof must be held at the ground potential (L level) in the operating state. This requires that a conductance Gp of a PMOS transistor and a conductance Gn of a NMOS transistor satisfy the relation: Gp<Gn. Therefore, a well terminal (lower terminal) of the PMOS transistor is set to a potential higher than the power supply potential Vdd2 in order to maintain the relation: Gp<Gn. Accordingly, a signal determined by the circuit in the operating state can be held even in the non-operating state, and the power supply voltage is set to an extremely low potential in the non-operating state of the circuit.
    Type: Grant
    Filed: July 15, 2002
    Date of Patent: April 27, 2004
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Keiichi Kusumoto, Tomoyuki Kumamaru, Takashi Andoh, Tetsuji Gotoh
  • Publication number: 20030025552
    Abstract: In a static circuit or the like, upper and lower terminals are both set to a first power supply potential Vdd1 in the operating state of an inverter circuit. In the non-operating state, the power supply potential of the upper terminal is reduced to a second power supply potential Vdd2 (<<Vdd1). Provided that an input signal of the inverter circuit has a potential Vdd2 (H level), an output signal thereof must be held at the ground potential (L level) in the operating state. This requires that a conductance Gp of a PMOS transistor and a conductance Gn of a NMOS transistor satisfy the relation: Gp<Gn. Therefore, a well terminal (lower terminal) of the PMOS transistor is set to a potential higher than the power supply potential Vdd2 in order to maintain the relation: Gp<Gn. Accordingly, a signal determined by the circuit in the operating state can be held even in the non-operating state, and the power supply voltage is set to an extremely low potential in the non-operating state of the circuit.
    Type: Application
    Filed: July 15, 2002
    Publication date: February 6, 2003
    Applicant: Matsushita Electric Industrial Co., Ltd.
    Inventors: Keiichi Kusumoto, Tomoyuki Kumamaru, Takashi Andoh, Tetsuji Gotoh