Patents by Inventor Tomoyuki Miyamoto

Tomoyuki Miyamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140061103
    Abstract: The present invention intends to provide an optical sorting machine which can improve the collection rate of non-defective products without increasing the size of the machine.
    Type: Application
    Filed: March 22, 2012
    Publication date: March 6, 2014
    Applicant: SATAKE CORPORATION
    Inventors: Takafumi Ito, Masazumi Hara, Tomoyuki Miyamoto
  • Patent number: 8116344
    Abstract: A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less.
    Type: Grant
    Filed: June 18, 2009
    Date of Patent: February 14, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tetsuya Takeuchi, Mamoru Uchida, Tomoyuki Miyamoto, Fumio Koyama
  • Patent number: 8031753
    Abstract: A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less.
    Type: Grant
    Filed: June 18, 2009
    Date of Patent: October 4, 2011
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tetsuya Takeuchi, Mamoru Uchida, Tomoyuki Miyamoto, Fumio Koyama
  • Publication number: 20100322669
    Abstract: A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less.
    Type: Application
    Filed: August 31, 2010
    Publication date: December 23, 2010
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Tetsuya Takeuchi, Mamoru Uchida, Tomoyuki Miyamoto, Fumio Koyama
  • Patent number: 7809040
    Abstract: A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less.
    Type: Grant
    Filed: February 8, 2008
    Date of Patent: October 5, 2010
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tetsuya Takeuchi, Mamoru Uchida, Tomoyuki Miyamoto, Fumio Koyama
  • Publication number: 20090252532
    Abstract: A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less.
    Type: Application
    Filed: June 18, 2009
    Publication date: October 8, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Tetsuya Takeuchi, Mamoru Uchida, Tomoyuki Miyamoto, Fumio Koyama
  • Publication number: 20080212631
    Abstract: A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less.
    Type: Application
    Filed: February 8, 2008
    Publication date: September 4, 2008
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Tetsuya Takeuchi, Mamoru Uchida, Tomoyuki Miyamoto, Fumio Koyama
  • Patent number: D707275
    Type: Grant
    Filed: March 14, 2012
    Date of Patent: June 17, 2014
    Assignee: Satake Corporation
    Inventors: Takafumi Ito, Tomoyuki Miyamoto