Abstract: There is provided a solid-state image pickup device comprising a plurality of pixel units, each of which includes a photoelectric conversion element, a signal line which reads out signals from said plurality of pixel units, a first capacitor element which has a first electrode connected to the signal line, an amplifier which has an input terminal connected to a second electrode of the first capacitor element, and a second capacitor element connected between the input terminal and an output terminal of the amplifier, wherein the first capacitor element has a capacitance value which is smaller at the time of execution of an adding mode than at the time of execution of a non-adding mode, and thereby making an amplification factor of the amplifier smaller at the time of execution of the adding mode than at the time of execution of the non-adding mode.

Abstract: A solid-state image pickup device includes an effective pixel portion in which effective pixels are arranged in a matrix, the effective pixels each including a photoelectric conversion unit and outputting a first signal, a non-effective pixel portion in which non-effective pixels are arranged in at least one row, the non-effective pixels each including no photoelectric conversion unit and outputting a second signal, a vertical scanning unit for selecting each row of pixels in the effective and non-effective pixel portions, and an input section for externally receiving a third signal used to change a driving mode of the solid-state image pickup device. The vertical scanning unit begins electronic shutter scanning upon pixels in the effective pixel portion and causes each of pixels in the non-effective pixel portion to output the second signal after the input section has received the third signal and before the first signal is output.

Abstract: An image sensing apparatus includes a pixel array including an optical black region and effective pixel region, and a scanning unit which scans the pixel array. The scanning unit includes a first shift register which scans the optical black region by a shift operation, and a second shift register which scans the effective pixel region by a shift operation. The second shift register starts the shift operation during a first period when the first shift register scans the optical black region, and scans a readout region serving as a partial region of the effective pixel region during a second period following the first period.

Abstract: It is a main object of the present invention to suppress the differences of color ratios of B/G and R/G when the film thicknesses of antireflective films and insulation films vary at a processing process. The present invention is a photoelectric conversion apparatus including a plurality of light receiving portions arranged on a semiconductor substrate, antireflective films formed on the light receiving portions with insulation films put between them, and color filter layers of a plurality of colors formed on the antireflective films, wherein film thicknesses of the insulation films and/or the antireflective films are changed such that changing directions of spectral transmittances at peak wavelengths of color filters on sides of the shortest wavelengths and at peak wavelengths of color filters on sides of the longest wavelengths after transmission of infrared cutting filters may be the same before and after changes.

Abstract: An imaging apparatus includes a pixel unit array and a driving unit. Each pixel unit includes a plurality of photoelectric conversion units, a charge-voltage converter common to the plurality of photoelectric conversion units, a plurality of transfer units which transfer electric charges generated by the plurality of photoelectric conversion units to the charge-voltage converter, an output unit which outputs a signal based on the electric charges to a signal line, and a setting unit which sets the electric potential of the charge-voltage converter. Each pixel unit is selected or deselected in accordance with the electric potential set in the charge-voltage converter. The driving unit drives the pixel unit array so that the output unit continuously outputs, to the signal line, the signal based on the electric charges generated by the plurality of photoelectric conversion units in the selected pixel unit without performing an operation of deselecting the selected pixel unit.

Abstract: In an imaging apparatus according to the present invention, the driving unit drives each of the pixels in the non-readout region in the first mode such that the setting unit sets the input unit to a third electric potential with the transfer unit being ready to transfer the electric charge to reset the photoelectric conversion unit in a first period and that the setting unit sets the input unit to a fourth electric potential for the pixel to be deselected in a second period later than the first period.

Abstract: A solid-state image sensing device having an effective pixel area and an optical black area disposed on one principal surface of a substrate, includes photoelectric converter elements, a wiring part containing a plurality of wiring layers disposed on the one principal surface of the substrate, in which in the optical black area more wiring layers are disposed than in the effective pixel area, an interlayer dielectric disposed between, among the plurality of wiring layers, a topmost first wiring layer and a second wiring layer disposed beneath the first wiring layer, a passivation film disposed on the interlayer dielectric in the effective pixel area and disposed on the first wiring layer in the optical black area, and inner lenses disposed at least at positions on the passivation film that corresponds to the effective pixel area, a thickness of the passivation film being equal to or less than a thickness of the first wiring layer.

Abstract: Each pixel includes a photo-electric converter, transfer switch, charge-voltage conversion node, amplifier, and control switch. A solid-state image sensor includes a voltage controller which controls the voltage of the charge-voltage conversion node of each pixel via the control switch of the pixel. A voltage set at the charge-voltage conversion node by the voltage controller via the control switch includes a first voltage (VD—1) for setting a pixel in a selected state, and a second voltage (VD—2) for setting the pixel in an unselected state. The voltage controller and the control switch of each pixel set the voltage of the charge-voltage conversion node of each pixel to the second voltage (VD—2) by using at least part of the horizontal scanning period.

Abstract: A solid-state image sensing device having an effective pixel area and an optical black area disposed on one principal surface of a substrate, includes photoelectric converter elements, a wiring part containing a plurality of wiring layers disposed on the one principal surface of the substrate, in which in the optical black area more wiring layers are disposed than in the effective pixel area, an interlayer dielectric disposed between, among the plurality of wiring layers, a topmost first wiring layer and a second wiring layer disposed beneath the first wiring layer, a passivation film disposed on the interlayer dielectric in the effective pixel area and disposed on the first wiring layer in the optical black area, and inner lenses disposed at least at positions on the passivation film that corresponds to the effective pixel area, a thickness of the passivation film being equal to or less than a thickness of the first wiring layer.

Abstract: There is provided a solid-state image pickup device comprising a plurality of pixel units, each of which includes a photoelectric conversion element, a signal line which reads out signals from said plurality of pixel units, a first capacitor element which has a first electrode connected to the signal line, an amplifier which has an input terminal connected to a second electrode of the first capacitor element, and a second capacitor element connected between the input terminal and an output terminal of the amplifier, wherein the first capacitor element has a capacitance value which is smaller at the time of execution of an adding mode than at the time of execution of a non-adding mode, and thereby making an amplification factor of the amplifier smaller at the time of execution of the adding mode than at the time of execution of the non-adding mode.

Abstract: A solid-state image sensing device having an effective pixel area and an optical black area disposed on one principal surface of a substrate, includes photoelectric converter elements, a wiring part containing a plurality of wiring layers disposed on the one principal surface of the substrate, in which in the optical black area more wiring layers are disposed than in the effective pixel area, an interlayer dielectric disposed between, among the plurality of wiring layers, a topmost first wiring layer and a second wiring layer disposed beneath the first wiring layer, a passivation film disposed on the interlayer dielectric in the effective pixel area and disposed on the first wiring layer in the optical black area, and inner lenses disposed at least at positions on the passivation film that corresponds to the effective pixel area, a thickness of the passivation film being equal to or less than a thickness of the first wiring layer.

Abstract: The invention provides an image pickup apparatus which is provided with plural light receiving areas arranged two-dimensionally, and a vertical scanning circuit composed of plural unit circuit stages arranged in the vertical direction and a horizontal scanning circuit composed of plural unit circuit stages arranged in the horizontal direction, for selecting and reading the plural light receiving areas in succession and in which the vertical scanning circuit and the horizontal scanning circuit are arranged in spaces between the light receiving areas, wherein a crossing area of the vertical scanning circuit and the horizontal scanning circuit, in a space between the light receiving areas, is divided into two areas, and at least a unit circuit of the horizontal scanning circuit is provided in one of the two areas while at least a unit circuit of the vertical scanning circuit is provided in the other of the two areas, or an image pickup apparatus which is provided with plural light receiving areas arranged two-di

Abstract: There is provided an image pickup apparatus in which a plurality of pixel areas in which pixels each having a photoelectric conversion unit are arranged two-dimensionally, are arranged on a single semiconductor chip to be adjacent to each other through a predetermined space, and a plurality of microlenses are formed on the plurality of pixels areas and on the predetermined spaces between the plurality of pixel areas.

Abstract: An image pickup apparatus includes plural light receiving areas arranged two-dimensionally and a vertical scanning circuit composed of plural unit circuit stages arranged in the vertical direction and a horizontal scanning circuit composed of plural unit circuit stages arranged in the horizontal direction for selecting and reading the plural light receiving areas in succession and in which the vertical scanning circuit and the horizontal scanning circuit are arranged in spaces between the light receiving areas. A crossing area of the vertical scanning circuit and the horizontal scanning circuit, in a space between the light receiving areas, is divided into two areas, and at least a unit circuit of the horizontal scanning circuit is provided in one of the two areas while at least a unit circuit of the vertical scanning circuit is provided in the other of the two areas.

Abstract: The number of necessary sampling and holding capacitors is reduced.

Abstract: An image sensor has a plurality of pixels, each pixel including a photoelectric converter and a pixel circuit for processing signals from the photoelectric converter and outputting processed signals and a scanning circuit, disposed between the photoelectric converters, included in each of at least two adjacent pixels among a plurality of pixels aligned in a single direction. An edge pixel accommodates, in order from an edge of the image sensor toward an interior, a predetermined empty region, a photoelectric converter and a pixel circuit. There is at least one position at which two adjacent pixels, the first of the two pixels accommodating, in order, a pixel circuit, a photoelectric converter and predetermined empty region, the second accommodating, in order, a predetermined empty region, a photoelectric converter and a pixel circuit. The scanning circuit is disposed in the predetermined empty region between the two adjacent pixels.

Abstract: An image sensing apparatus has a plurality of pixels, and can output an image by converting its resolution by adding and reading out pixels for respective pixel groups each including a predetermined number of pixels of the plurality of pixels. Each pixel has a photoelectric conversion unit, an amplifier for amplifying and outputting a signal from the photoelectric conversion unit, and a capacitor connected to the output of the amplifier. The apparatus has a plurality of switches for commonly connecting between the capacitors of two or more pixels of the plurality of pixels.

Abstract: An image sensor has a plurality of pixels, each pixel including a photoelectric converter and a pixel circuit for processing signals from the photoelectric converter and outputting processed signals and a scanning circuit, disposed between the photoelectric converters, included in each of at least two adjacent pixels among a plurality of pixels aligned in a single direction. An edge pixel accommodates, in order from an edge of the image sensor toward an interior, a predetermined empty region, a photoelectric converter and a pixel circuit. There is at least one position at which two adjacent pixels, the first of the two pixels accommodating, in order, a pixel circuit, a photoelectric converter and predetermined empty region, the second accommodating, in order, a predetermined empty region, a photoelectric converter and a pixel circuit. The scanning circuit is disposed in the predetermined empty region between the two adjacent pixels.

Abstract: It is a main object of the present invention to suppress the differences of color ratios of B/G and R/G when the film thicknesses of antireflective films and insulation films vary at a processing process. The present invention is a photoelectric conversion apparatus including a plurality of light receiving portions arranged on a semiconductor substrate, antireflective films formed on the light receiving portions with insulation films put between them, and color filter layers of a plurality of colors formed on the antireflective films, wherein film thicknesses of the insulation films and/or the antireflective films are changed such that changing directions of spectral transmittances at peak wavelengths of color filters on sides of the shortest wavelengths and at peak wavelengths of color filters on sides of the longest wavelengths after transmission of infrared cutting filters may be the same before and after changes.

Abstract: The invention provides a signal processing apparatus having clamp capacitance device for receiving, at one electrode thereof, first and second signals outputted from a signal source, a signal transfer transistor of which one main electrode is connected to an other electrode of the clamp capacitance device, signal accumulating capacitance device connected to an other main electrode of the signal transfer transistor, and reset device for fixing the potential of the signal accumulating capacitance device, wherein the potential of the signal accumulating capacitance device is fixed by the reset device while the first signal is outputted from the signal source and the signal accumulating capacitance device is maintained in a floating state while the second signal is outputted from the signal source, and the signal transfer transistor is controlled in such a manner that the potential of the main electrode of the signal transfer transistor and that of the other main electrode thereof show different saturation operat