Abstract: No studies have been made regarding what kinds of refrigerants should be used in a refrigeration cycle device for a vehicle. An air conditioner (1) for a vehicle includes a refrigerant circuit (10) and a refrigerant that is sealed in the refrigerant circuit (10). The refrigerant circuit (10) includes a compressor (80), a first heat exchanger (85), which serves as a heat dissipater in a dehumidifying heating mode, an outside-air heat exchanger (82), a cooling control valve (87), and a second heat exchanger (86), which serves as an evaporator in the dehumidifying heating mode. The refrigerant is a refrigerant having a low GWP.

Abstract: A showcase includes a refrigerant circuit and a refrigerant enclosed in the refrigerant circuit. The refrigerant circuit includes a compressor (121), a radiator (122), an expansion valve (123), and an evaporator (124). The refrigerant is a low-GWP refrigerant.

Abstract: A laser annealing device includes: a CW laser device configured to emit continuous wave laser light caused by continuous oscillation to preheat the amorphous silicon; a pulse laser device configured to emit the pulse laser light toward the preheated amorphous silicon; an optical system configured to guide the continuous wave laser light and the pulse laser light to the amorphous silicon; and a control unit configured to control an irradiation energy density of the continuous wave laser light so as to preheat the amorphous silicon to have a predetermined target temperature less than a melting point thereof, and configured to control at least one of a fluence and a number of pulses of the pulse laser light so as to crystallize the preheated amorphous silicon.

Abstract: The laser doping apparatus may irradiate a predetermined region of a semiconductor material with a pulse laser beam to perform doping. The laser doping apparatus may include: a solution supplying system configured to supply dopant-containing solution to the predetermined region, and a laser system including at least one laser device configured to output the pulse laser beam to be transmitted by the dopant-containing solution, and a time-domain pulse waveform changing apparatus configured to control a time-domain pulse waveform of the pulse laser beam.

Abstract: The laser doping apparatus may irradiate a predetermined region of a semiconductor material with a pulse laser beam to perform doping. The laser doping apparatus may include: a solution supplying system configured to supply dopant-containing solution to the predetermined region, and a laser system including at least one laser device configured to output the pulse laser beam to be transmitted by the dopant-containing solution, and a time-domain pulse waveform changing apparatus configured to control a time-domain pulse waveform of the pulse laser beam.

Abstract: A high-voltage pulse generator may include a number “n” (n is a natural number of not less than 2) of primary electric circuits connected in parallel to one another on the primary side of a pulse transformer, and a secondary electric circuit of the pulse transformer, which is connected to a pair of discharge electrodes disposed in a laser chamber of a gas laser apparatus. The “n” primary electric circuits may include a number “n” of primary coils connected in parallel to one another, a number “n” of capacitors respectively connected in parallel to the “n” primary coils, and a number “n” of switches respectively connected in series to the “n” capacitors. The “n” primary electric circuits may be connected to a number “n” of chargers for charging the “n” capacitors, respectively.

Abstract: A laser annealing device includes: a CW laser device configured to emit continuous wave laser light caused by continuous oscillation to preheat the amorphous silicon; a pulse laser device configured to emit the pulse laser light toward the preheated amorphous silicon; an optical system configured to guide the continuous wave laser light and the pulse laser light to the amorphous silicon; and a control unit configured to control an irradiation energy density of the continuous wave laser light so as to preheat the amorphous silicon to have a predetermined target temperature less than a melting point thereof, and configured to control at least one of a fluence and a number of pulses of the pulse laser light so as to crystallize the preheated amorphous silicon.

Abstract: A gas laser device may include: a laser chamber containing laser gas; a first discharge electrode disposed in the laser chamber; a second discharge electrode disposed to face the first discharge electrode in the laser chamber; and a condenser including a polyimide dielectric and configured to supply power to between the first discharge electrode and the second discharge electrode.

Abstract: A laser system may serve as a light source of a laser annealing apparatus that irradiates a workpiece with a pulse laser beam. The laser system may include: a laser apparatus configured to generate the pulse laser beam; a time-domain pulse waveform changing apparatus configured to change time-domain pulse waveform of the pulse laser beam; and a controller configured to receive at least one parameter for generating the time-domain pulse waveform from the laser annealing apparatus and to control the time-domain pulse waveform changing apparatus.

Abstract: The laser doping apparatus may irradiate a predetermined region of a semiconductor material with a pulse laser beam to perform doping. The laser doping apparatus may include: a solution supplying system configured to supply dopant-containing solution to the predetermined region, and a laser system including at least one laser device configured to output the pulse laser beam to be transmitted by the dopant-containing solution, and a time-domain pulse waveform changing apparatus configured to control a time-domain pulse waveform of the pulse laser beam.

Abstract: A high-voltage pulse generator may include a number “n” (n is a natural number of not less than 2) of primary electric circuits connected in parallel to one another on the primary side of a pulse transformer, and a secondary electric circuit of the pulse transformer, which is connected to a pair of discharge electrodes disposed in a laser chamber of a gas laser apparatus. The “n” primary electric circuits may include a number “n” of primary coils connected in parallel to one another, a number “n” of capacitors respectively connected in parallel to the “n” primary coils, and a number “n” of switches respectively connected in series to the “n” capacitors. The “n” primary electric circuits may be connected to a number “n” of chargers for charging the “n” capacitors, respectively.

Abstract: A gas laser device may include: a laser chamber containing laser gas; a first discharge electrode disposed in the laser chamber; a second discharge electrode disposed to face the first discharge electrode in the laser chamber; and a condenser including a polyimide dielectric and configured to supply power to between the first discharge electrode and the second discharge electrode.