Abstract: An insulated gate semiconductor device provided herein includes a front electrode and a rear electrode and is configured to switch a conducting path between the front electrode and the rear electrode. The insulated gate semiconductor device includes a first circumferential trench provided in the front surface; a second circumferential trend provided in the front surface and deeper than the first circumferential trench; a fifth region of a second conductivity type exposed on a bottom surface of the first circumferential trench; a sixth region of the second conductivity type exposed on a bottom surface of the second circumferential trench; and a seventh region of a first conductivity type connected to the third region and separating the fifth region from the sixth region. A front side end portion of the sixth region being located on a rear side with respect to a rear side end portion of the fifth region.

Abstract: An insulated gate semiconductor device provided herein includes a front electrode and a rear electrode and is configured to switch a conducting path between the front electrode and the rear electrode. The insulated gate semiconductor device includes a first circumferential trench provided in the front surface; a second circumferential trend provided in the front surface and deeper than the first circumferential trench; a fifth region of a second conductivity type exposed on a bottom surface of the first circumferential trench; a sixth region of the second conductivity type exposed on a bottom surface of the second circumferential trench; and a seventh region of a first conductivity type connected to the third region and separating the fifth region from the sixth region. A front side end portion of the sixth region being located on a rear side with respect to a rear side end portion of the fifth region.

Abstract: A cooling type switching element module includes an outer conductor pipe, an inner conductor pipe that transmits electric power in conjunction with the outer conductor pipe, and first and second switching elements. The first switching elements are provided on outer surfaces of the outer conductor pipe, and the second switching elements are provided on outer surfaces of a projecting portion of the inner conductor pipe. A coolant flows within the inner conductor pipe, and outside the outer conductor pipe. The first and second switching elements are cooled from both sides by the coolant flowing within the inner conductor pipe, and by the coolant flowing outside the outer conductor pipe. By employing the above-described structure, it is possible to provide a switching element module having a cooling function, in which improved cooling performance, improved electrical performance, and downsizing are achieved.

Abstract: A heat transfer member is disposed between a semiconductor element and an electrode plate. The heat transfer member comprises a metal portion extending between a first face at the semiconductor element side and a second face at the plate electrode side, and a ceramic portion surrounding the metal portion. An area of the first face is less than an area of the second face in the metal portion.

Abstract: A cooling type switching element module includes an outer conductor pipe, an inner conductor pipe that transmits electric power in conjunction with the outer conductor pipe, and first and second switching elements. The first switching elements are provided on outer surfaces of the outer conductor pipe, and the second switching elements are provided on outer surfaces of a projecting portion of the inner conductor pipe. A coolant flows within the inner conductor pipe, and outside the outer conductor pipe. The first and second switching elements are cooled from both sides by the coolant flowing within the inner conductor pipe, and by the coolant flowing outside the outer conductor pipe. By employing the above-described structure, it is possible to provide a switching element module having a cooling function, in which improved cooling performance, improved electrical performance, and downsizing are achieved.

Abstract: A heat transfer member is disposed between a semiconductor element and an electrode plate. The heat transfer member comprises a metal portion extending between a first face at the semiconductor element side and a second face at the plate electrode side, and a ceramic portion surrounding the metal portion. An area of the first face is less than an area of the second face in the metal portion.

Abstract: A technique is presented for further reducing on-resistance (or on-voltage) in a vertical semiconductor device provided with a carrier shielding layer. A semiconductor substrate 20 of a semiconductor device 10 comprises a channel section 10A and a non-channel section 10B. An emitter region 26 is formed in the channel section 10A, this emitter region 26 making contact with a side surface of a trench gate 30 and being electrically connected to an emitter electrode 28. The emitter region 26 is not formed in a body region 25 of the non-channel section 10B. In a plan view, an occupied area ratio of the area which a carrier shielding layer 52 located in the non-channel section 10B occupies within the non-channel section 10B is larger than an occupied area ratio of the area which the carrier shielding layer 52 located in the channel section 10A occupies within the channel section 10A.