Patents by Inventor Tomoyuki Suwa

Tomoyuki Suwa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10927454
    Abstract: A method of forming a nitride film wherein (a) a silane-based gas is supplied to a processing chamber through a gas supply port; (b) a nitrogen radical gas from a radical generator is supplied to the processing chamber through a radical gas pass-through port; and (c) the silane-based gas supplied in (a) is reacted with the nitrogen radical gas supplied in (b), without causing a plasma phenomenon in the processing chamber, to form a nitride film on a wafer.
    Type: Grant
    Filed: February 14, 2017
    Date of Patent: February 23, 2021
    Assignees: Toshiba Mitsubishi-Electric Industrial Systems Corporation, Tohoku University
    Inventors: Shinichi Nishimura, Kensuke Watanabe, Yoshihito Yamada, Akinobu Teramoto, Tomoyuki Suwa, Yoshinobu Shiba
  • Patent number: 10559460
    Abstract: There is provided a film forming apparatus for forming a silicon nitride film on a substrate by having a precursor gas containing silicon to react with a reaction gas containing nitrogen, including: a processing container configured to form a vacuum atmosphere; a substrate mounting part installed in the processing container; a precursor gas supply part configured to supply a precursor gas into the processing container; a reaction gas supply part configured to supply a reaction gas containing nitrogen into the processing container; and an ultraviolet irradiating part configured to excite the reaction gas before the reaction gas reacts with the precursor gas, wherein a substrate on the substrate mounting part is not irradiated with an ultraviolet ray emitted from the ultraviolet irradiating part.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: February 11, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akira Shimizu, Katsutoshi Ishii, Akinobu Teramoto, Tomoyuki Suwa, Yoshinobu Shiba
  • Publication number: 20190390332
    Abstract: A method of forming a nitride film wherein (a) a silane-based gas is supplied to a processing chamber through a gas supply port; (b) a nitrogen radical gas from a radical generator is supplied to the processing chamber through a radical gas pass-through port; and (c) the silane-based gas supplied in (a) is reacted with the nitrogen radical gas supplied in (b), without causing a plasma phenomenon in the processing chamber, to form a nitride film on a wafer.
    Type: Application
    Filed: February 14, 2017
    Publication date: December 26, 2019
    Applicants: Toshiba Mitsubishi-Electric Industrial Systems Corporation, Tohoku University
    Inventors: Shinichi NISHIMURA, Kensuke WATANABE, Yoshihito YAMADA, Akinobu TERAMOTO, Tomoyuki SUWA, Yoshinobu SHIBA
  • Publication number: 20190074177
    Abstract: There is provided a film forming apparatus for forming a silicon nitride film on a substrate by having a precursor gas containing silicon to react with a reaction gas containing nitrogen, including: a processing container configured to form a vacuum atmosphere; a substrate mounting part installed in the processing container, a precursor gas supply part configured to supply a precursor gas into the processing container, a reaction gas supply part configured to supply a reaction gas containing nitrogen into the processing container, and an ultraviolet irradiating part configured to excite the reaction gas before the reaction gas reacts with the precursor gas, wherein a substrate on the substrate mounting part is not irradiated with an ultraviolet ray emitted from the ultraviolet irradiating part.
    Type: Application
    Filed: September 6, 2018
    Publication date: March 7, 2019
    Inventors: Akira SHIMIZU, Katsutoshi ISHII, Akinobu TERAMOTO, Tomoyuki SUWA, Yoshinobu SHIBA
  • Publication number: 20160276171
    Abstract: In a silicon wafer which has a surface with a plurality of terraces formed stepwise by single-atomic-layer steps, respectively, no slip line is formed.
    Type: Application
    Filed: September 17, 2015
    Publication date: September 22, 2016
    Applicant: NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY
    Inventors: Tadahiro OHMI, Akinobu TERAMOTO, Tomoyuki SUWA
  • Patent number: 9157681
    Abstract: In a silicon wafer which has a surface with a plurality of terraces formed stepwise by single-atomic-layer steps, respectively, no slip line is formed.
    Type: Grant
    Filed: August 3, 2012
    Date of Patent: October 13, 2015
    Assignee: National University Corporation Tohoku University
    Inventors: Tadahiro Ohmi, Akinobu Teramoto, Tomoyuki Suwa
  • Patent number: 9081318
    Abstract: It is an object of the present invention to provide a ferrite carrier core material and a ferrite carrier for an electrophotographic developer, which have an excellent charging property, hardly cause carrier scattering due to cracking and chipping of the core material, and have a prolonged life, and methods for manufacturing these, and an electrophotographic developer using the ferrite carrier. For this object, the ferrite carrier core material and a ferrite carrier for an electrophotographic developer, wherein (1) the ferrite composition contains 0.5 to 2.5% by weight of Sr, and the presence amount of Sr—Fe oxides satisfies a specific conditional expression, (2) the distribution in the number of the shape factor SF-2 is in a specific range, (3) the BET specific surface area is 0.15 to 0.30 m2/g, (4) the average particle diameter D50 is 20 to 35 ?m, and (5) the magnetization is 50 to 65 Am2/kg.
    Type: Grant
    Filed: August 29, 2011
    Date of Patent: July 14, 2015
    Assignee: POWDERTECH CO., LTD.
    Inventors: Tomoyuki Suwa, Toru Iwata, Koji Aga
  • Publication number: 20140252436
    Abstract: There is provided a semiconductor device with basic electronic elements in a three-dimensional structure. The semiconductor device has a source region and a drain region each of which includes an electrode and a silicide region, and is formed with a plurality of different crystal planes. The silicide regions on different crystal planes of the source region and the drain region have different thicknesses.
    Type: Application
    Filed: May 23, 2014
    Publication date: September 11, 2014
    Applicant: TOHOKU UNIVERSITY
    Inventors: Tomoyuki Suwa, Hiroaki Tanaka, Tadahiro Ohmi
  • Patent number: 8628905
    Abstract: A ferrite core material for a resin-filled type carrier, and a resin-filled type carrier which is used as an electrophotographic developer by mixing a toner, sufficiently secure the image density, have no carrier adhesion and can maintain high-quality images over a long period, and an electrophotographic developer using the carrier, are provided. A ferrite core material for a resin-filled type carrier characterized in a void fraction of 10 to 60%, a resin-filled type carrier filled in the carrier core material with a resin, and an electrophotographic developer composed of the resin-filled type carrier and a toner, are provided.
    Type: Grant
    Filed: May 31, 2006
    Date of Patent: January 14, 2014
    Assignee: Powdertech Co. Ltd.
    Inventors: Hiromichi Kobayashi, Tsuyoshi Itagoshi, Tomoyuki Suwa, Toshio Honjo
  • Patent number: 8535867
    Abstract: There is provided a ferrite core material for an electrophotographic developer, the ferrite core material having a ferrite particle composition represented by the formula (1) shown below, containing SrO replacing a part of (MnO) and/or (MgO) in the formula (1) shown below, and having a Cl concentration of 0.1 to 100 ppm, as measured by an elution method of the ferrite core material: (MnO)x(MgO)y(Fe2O3)z??(1) wherein x=35 to 45 mol %, y=5 to 15 mol %, z=40 to 60 mol %, and x+y+z=100 mol %.
    Type: Grant
    Filed: February 3, 2011
    Date of Patent: September 17, 2013
    Assignee: Powdertech Co., Ltd.
    Inventors: Tomoyuki Suwa, Toru Iwata, Koji Aga
  • Patent number: 8492879
    Abstract: On a surface of a semiconductor substrate, a plurality of terraces formed stepwise by an atomic step are formed in the substantially same direction. Using the semiconductor substrate, a MOS transistor is formed so that no step exists in a carrier traveling direction (source-drain direction).
    Type: Grant
    Filed: October 6, 2008
    Date of Patent: July 23, 2013
    Assignees: National University Corporation Tohoku University, Shin-Etsu Handotai Co., Ltd.
    Inventors: Tadahiro Ohmi, Akinobu Teramoto, Tomoyuki Suwa, Rihito Kuroda, Hideo Kudo, Yoshinori Hayamizu
  • Publication number: 20130171558
    Abstract: It is an object of the present invention to provide a ferrite carrier core material and a ferrite carrier for an electrophotographic developer, which have an excellent charging property, hardly cause carrier scattering due to cracking and chipping of the core material, and have a prolonged life, and methods for manufacturing these, and an electrophotographic developer using the ferrite carrier. For this object, the ferrite carrier core material and a ferrite carrier for an electrophotographic developer, wherein (1) the ferrite composition contains 0.5 to 2.5% by weight of Sr, and the presence amount of Sr—Fe oxides satisfies a specific conditional expression, (2) the distribution in the number of the shape factor SF-2 is in a specific range, (3) the BET specific surface area is 0.15 to 0.30 m2/g, (4) the average particle diameter D50 is 20 to 35 ?m, and (5) the magnetization is 50 to 65 Am2/kg.
    Type: Application
    Filed: August 29, 2011
    Publication date: July 4, 2013
    Applicant: POWDERTECH CO., LTD.
    Inventors: Tomoyuki Suwa, Toru Iwata, Koji Aga
  • Publication number: 20120292743
    Abstract: In a silicon wafer which has a surface with a plurality of terraces formed stepwise by single-atomic-layer steps, respectively, no slip line is formed.
    Type: Application
    Filed: August 3, 2012
    Publication date: November 22, 2012
    Inventors: Tadahiro OHMI, Akinobu TERAMOTO, Tomoyuki SUWA
  • Patent number: 8039190
    Abstract: A carrier core material for an electrophotographic developer including Li ferrite, maghemite, and Fe3O4, wherein a part thereof is substituted with Mn, Li content is 1 to 2.5% by weight, Mn content is 2 to 7.5% by weight, and silicon content is 25 to 10,000 ppm, the following equation (1) is satisfied when respective integrated strengths of spinel crystal structure (110), (210), (211), and (311) faces in X-ray diffraction are respectively I110, I210, I211, and I311, a resistivity R50 of 50 V across a 6.5 mm gap is 5×107 to 7×108?, and a resistivity R1000 of 1,000 V across a 6.5 mm gap is 1×107 to 8×108?. 2<100×(I110+I210+I211)/I311<14??(1).
    Type: Grant
    Filed: March 6, 2009
    Date of Patent: October 18, 2011
    Assignees: Mitsui Mining & Smelting Co., Ltd., Powdertech Co., Ltd.
    Inventors: Yasunori Tabira, Koji Aga, Tomoyuki Suwa
  • Publication number: 20110212399
    Abstract: There is provided a ferrite core material for an electrophotographic developer, the ferrite core material having a ferrite particle composition represented by the formula (1) shown below, containing SrO replacing a part of (MnO) and/or (MgO) in the formula (1) shown below, and having a Cl concentration of 0.1 to 100 ppm, as measured by an elution method of the ferrite core material: (MnO)x(MgO)y(Fe2O3)z ??(1) wherein x=35 to 45 mol %, y=5 to 15 mol %, z=40 to 60 mol %, and x+y+z=100 mol %.
    Type: Application
    Filed: February 3, 2011
    Publication date: September 1, 2011
    Applicant: POWDERTECH CO., LTD.
    Inventors: Tomoyuki SUWA, Toru IWATA, Koji AGA
  • Patent number: 7906265
    Abstract: A ferrite carrier for an electrophotographic developer having a compression breaking strength of 150 MPa or more, a rate of compressive change of 15.0% or more and a shape factor SF-1 of 100 to 125, a method for producing the same, and an electrophotographic developer containing the ferrite carrier.
    Type: Grant
    Filed: March 30, 2007
    Date of Patent: March 15, 2011
    Assignee: Powdertech Co., Ltd.
    Inventors: Tomoyuki Suwa, Tsuyoshi Itagoshi
  • Patent number: 7862975
    Abstract: A carrier core material for an electrophotographic developer containing Li ferrite, maghemite, and Fe3O4, wherein a part thereof is substituted with Mn, a Li content is 1 to 2.5% by weight, a Mn content is 2 to 7.5% by weight, and a silicon content is 25 to 10,000 ppm, a compression breaking strength is 130 MPa or more, an SF-1 is 125 to 145, respective cumulative strengths of respective spinel crystal structure faces in X-ray diffraction satisfy a certain equation, a vacuum resistivity R500 across a 2 mm gap when a measurement voltage of 500 V is applied is 1×106 to 5×109 ?, and a vacuum resistivity R1000 across a 6.5 mm gap when a measurement voltage of 1,000 V is applied is 5×107 to 1×1010 ?.
    Type: Grant
    Filed: March 6, 2009
    Date of Patent: January 4, 2011
    Assignees: Mitsui Mining & Smelting Co., Ltd., Powdertech Co., Ltd.
    Inventors: Yasunori Tabira, Koji Aga, Tomoyuki Suwa
  • Publication number: 20100213516
    Abstract: On a surface of a semiconductor substrate, a plurality of terraces formed stepwise by an atomic step are formed in the substantially same direction. Using the semiconductor substrate, a MOS transistor is formed so that no step exists in a carrier traveling direction (source-drain direction).
    Type: Application
    Filed: October 6, 2008
    Publication date: August 26, 2010
    Inventors: Tadahiro Ohmi, Akinobu Teramoto, Tomoyuki Suwa, Rihito Kuroda, Hideo Kudo, Yoshinori Hayamizu
  • Publication number: 20090246677
    Abstract: A carrier core material for an electrophotographic developer containing Li ferrite, maghemite, and Fe3O4, wherein a part thereof is substituted with Mn, a Li content is 1 to 2.5% by weight, a Mn content is 2 to 7.5% by weight, and a silicon content is 25 to 10,000 ppm, a compression breaking strength is 130 MPa or more, an SF-1 is 125 to 145, respective cumulative strengths of respective spinel crystal structure faces in X-ray diffraction satisfy a certain equation, a vacuum resistivity R500 across a 2 mm gap when a measurement voltage of 500 V is applied is 1×106 to 5×109?, and a vacuum resistivity R1000 across a 6.5 mm gap when a measurement voltage of 1,000 V is applied is 5×107 to 1×1010?.
    Type: Application
    Filed: March 6, 2009
    Publication date: October 1, 2009
    Applicants: MITSUI MINING & SMELTING CO., LTD., POWDERTECH CO., LTD.
    Inventors: Yasunori TABIRA, Koji AGA, Tomoyuki SUWA
  • Publication number: 20090246676
    Abstract: A carrier core material for an electrophotographic developer including Li ferrite, maghemite, and Fe3O4, wherein a part thereof is substituted with Mn, Li content is 1 to 2.5% by weight, Mn content is 2 to 7.5% by weight, and silicon content is 25 to 10,000 ppm, the following equation (1) is satisfied when respective integrated strengths of spinel crystal structure (110), (210), (211), and (311) faces in X-ray diffraction are respectively I110, I210, I211, and I311, a resistivity R50 of 50 V across a 6.5 mm gap is 5×107 to 7×108?, and a resistivity R1000 of V across a 6.5 mm gap is 1×107 to 8×108?.
    Type: Application
    Filed: March 6, 2009
    Publication date: October 1, 2009
    Applicants: MITSUI MINING & SMELTING CO., LTD., POWDERTECH CO., LTD.
    Inventors: Yasunori TABIRA, Koji AGA, Tomoyuki SUWA