Abstract: A selective film forming method includes: preparing a substrate including a first film having a first surface and a second film having a second surface, the second film being different from the first film; selectively adsorbing a secondary alcohol gas and/or a tertiary alcohol gas to the second surface; and selectively forming a film on the first surface by supplying at least a raw material gas.

Abstract: A method of forming a nitride film wherein (a) a silane-based gas is supplied to a processing chamber through a gas supply port; (b) a nitrogen radical gas from a radical generator is supplied to the processing chamber through a radical gas pass-through port; and (c) the silane-based gas supplied in (a) is reacted with the nitrogen radical gas supplied in (b), without causing a plasma phenomenon in the processing chamber, to form a nitride film on a wafer.

Abstract: There is provided a film forming apparatus for forming a silicon nitride film on a substrate by having a precursor gas containing silicon to react with a reaction gas containing nitrogen, including: a processing container configured to form a vacuum atmosphere; a substrate mounting part installed in the processing container; a precursor gas supply part configured to supply a precursor gas into the processing container; a reaction gas supply part configured to supply a reaction gas containing nitrogen into the processing container; and an ultraviolet irradiating part configured to excite the reaction gas before the reaction gas reacts with the precursor gas, wherein a substrate on the substrate mounting part is not irradiated with an ultraviolet ray emitted from the ultraviolet irradiating part.

Abstract: A method of forming a nitride film wherein (a) a silane-based gas is supplied to a processing chamber through a gas supply port; (b) a nitrogen radical gas from a radical generator is supplied to the processing chamber through a radical gas pass-through port; and (c) the silane-based gas supplied in (a) is reacted with the nitrogen radical gas supplied in (b), without causing a plasma phenomenon in the processing chamber, to form a nitride film on a wafer.

Abstract: There is provided a film forming apparatus for forming a silicon nitride film on a substrate by having a precursor gas containing silicon to react with a reaction gas containing nitrogen, including: a processing container configured to form a vacuum atmosphere; a substrate mounting part installed in the processing container, a precursor gas supply part configured to supply a precursor gas into the processing container, a reaction gas supply part configured to supply a reaction gas containing nitrogen into the processing container, and an ultraviolet irradiating part configured to excite the reaction gas before the reaction gas reacts with the precursor gas, wherein a substrate on the substrate mounting part is not irradiated with an ultraviolet ray emitted from the ultraviolet irradiating part.

Abstract: In a silicon wafer which has a surface with a plurality of terraces formed stepwise by single-atomic-layer steps, respectively, no slip line is formed.

Abstract: In a silicon wafer which has a surface with a plurality of terraces formed stepwise by single-atomic-layer steps, respectively, no slip line is formed.

Abstract: It is an object of the present invention to provide a ferrite carrier core material and a ferrite carrier for an electrophotographic developer, which have an excellent charging property, hardly cause carrier scattering due to cracking and chipping of the core material, and have a prolonged life, and methods for manufacturing these, and an electrophotographic developer using the ferrite carrier. For this object, the ferrite carrier core material and a ferrite carrier for an electrophotographic developer, wherein (1) the ferrite composition contains 0.5 to 2.5% by weight of Sr, and the presence amount of Sr—Fe oxides satisfies a specific conditional expression, (2) the distribution in the number of the shape factor SF-2 is in a specific range, (3) the BET specific surface area is 0.15 to 0.30 m2/g, (4) the average particle diameter D50 is 20 to 35 ?m, and (5) the magnetization is 50 to 65 Am2/kg.

Abstract: There is provided a semiconductor device with basic electronic elements in a three-dimensional structure. The semiconductor device has a source region and a drain region each of which includes an electrode and a silicide region, and is formed with a plurality of different crystal planes. The silicide regions on different crystal planes of the source region and the drain region have different thicknesses.

Abstract: A ferrite core material for a resin-filled type carrier, and a resin-filled type carrier which is used as an electrophotographic developer by mixing a toner, sufficiently secure the image density, have no carrier adhesion and can maintain high-quality images over a long period, and an electrophotographic developer using the carrier, are provided. A ferrite core material for a resin-filled type carrier characterized in a void fraction of 10 to 60%, a resin-filled type carrier filled in the carrier core material with a resin, and an electrophotographic developer composed of the resin-filled type carrier and a toner, are provided.

Abstract: There is provided a ferrite core material for an electrophotographic developer, the ferrite core material having a ferrite particle composition represented by the formula (1) shown below, containing SrO replacing a part of (MnO) and/or (MgO) in the formula (1) shown below, and having a Cl concentration of 0.1 to 100 ppm, as measured by an elution method of the ferrite core material: (MnO)x(MgO)y(Fe2O3)z??(1) wherein x=35 to 45 mol %, y=5 to 15 mol %, z=40 to 60 mol %, and x+y+z=100 mol %.

Abstract: On a surface of a semiconductor substrate, a plurality of terraces formed stepwise by an atomic step are formed in the substantially same direction. Using the semiconductor substrate, a MOS transistor is formed so that no step exists in a carrier traveling direction (source-drain direction).

Abstract: It is an object of the present invention to provide a ferrite carrier core material and a ferrite carrier for an electrophotographic developer, which have an excellent charging property, hardly cause carrier scattering due to cracking and chipping of the core material, and have a prolonged life, and methods for manufacturing these, and an electrophotographic developer using the ferrite carrier. For this object, the ferrite carrier core material and a ferrite carrier for an electrophotographic developer, wherein (1) the ferrite composition contains 0.5 to 2.5% by weight of Sr, and the presence amount of Sr—Fe oxides satisfies a specific conditional expression, (2) the distribution in the number of the shape factor SF-2 is in a specific range, (3) the BET specific surface area is 0.15 to 0.30 m2/g, (4) the average particle diameter D50 is 20 to 35 ?m, and (5) the magnetization is 50 to 65 Am2/kg.

Abstract: In a silicon wafer which has a surface with a plurality of terraces formed stepwise by single-atomic-layer steps, respectively, no slip line is formed.

Abstract: A carrier core material for an electrophotographic developer including Li ferrite, maghemite, and Fe3O4, wherein a part thereof is substituted with Mn, Li content is 1 to 2.5% by weight, Mn content is 2 to 7.5% by weight, and silicon content is 25 to 10,000 ppm, the following equation (1) is satisfied when respective integrated strengths of spinel crystal structure (110), (210), (211), and (311) faces in X-ray diffraction are respectively I110, I210, I211, and I311, a resistivity R50 of 50 V across a 6.5 mm gap is 5×107 to 7×108?, and a resistivity R1000 of 1,000 V across a 6.5 mm gap is 1×107 to 8×108?. 2<100×(I110+I210+I211)/I311<14??(1).

Abstract: There is provided a ferrite core material for an electrophotographic developer, the ferrite core material having a ferrite particle composition represented by the formula (1) shown below, containing SrO replacing a part of (MnO) and/or (MgO) in the formula (1) shown below, and having a Cl concentration of 0.1 to 100 ppm, as measured by an elution method of the ferrite core material: (MnO)x(MgO)y(Fe2O3)z ??(1) wherein x=35 to 45 mol %, y=5 to 15 mol %, z=40 to 60 mol %, and x+y+z=100 mol %.

Abstract: A ferrite carrier for an electrophotographic developer having a compression breaking strength of 150 MPa or more, a rate of compressive change of 15.0% or more and a shape factor SF-1 of 100 to 125, a method for producing the same, and an electrophotographic developer containing the ferrite carrier.

Abstract: A carrier core material for an electrophotographic developer containing Li ferrite, maghemite, and Fe3O4, wherein a part thereof is substituted with Mn, a Li content is 1 to 2.5% by weight, a Mn content is 2 to 7.5% by weight, and a silicon content is 25 to 10,000 ppm, a compression breaking strength is 130 MPa or more, an SF-1 is 125 to 145, respective cumulative strengths of respective spinel crystal structure faces in X-ray diffraction satisfy a certain equation, a vacuum resistivity R500 across a 2 mm gap when a measurement voltage of 500 V is applied is 1×106 to 5×109 ?, and a vacuum resistivity R1000 across a 6.5 mm gap when a measurement voltage of 1,000 V is applied is 5×107 to 1×1010 ?.

Abstract: On a surface of a semiconductor substrate, a plurality of terraces formed stepwise by an atomic step are formed in the substantially same direction. Using the semiconductor substrate, a MOS transistor is formed so that no step exists in a carrier traveling direction (source-drain direction).

Abstract: A carrier core material for an electrophotographic developer containing Li ferrite, maghemite, and Fe3O4, wherein a part thereof is substituted with Mn, a Li content is 1 to 2.5% by weight, a Mn content is 2 to 7.5% by weight, and a silicon content is 25 to 10,000 ppm, a compression breaking strength is 130 MPa or more, an SF-1 is 125 to 145, respective cumulative strengths of respective spinel crystal structure faces in X-ray diffraction satisfy a certain equation, a vacuum resistivity R500 across a 2 mm gap when a measurement voltage of 500 V is applied is 1×106 to 5×109?, and a vacuum resistivity R1000 across a 6.5 mm gap when a measurement voltage of 1,000 V is applied is 5×107 to 1×1010?.