Abstract: A fuel injector for an internal combustion engine includes a fuel injection valve, a heater, and a controller. The fuel injection valve is configured to supply fuel to the internal combustion engine. The heater is configured to heat the fuel in the fuel injection valve. The controller is configured to: control the fuel injection valve to stop supplying the fuel to the internal combustion engine, control the heater to execute or stop heating the fuel in the fuel injection valve, and control the fuel injection valve to prohibit the stop of supplying the fuel during execution of the heating by the heater.

Abstract: An EFI-ECU determines an initial value of a correction value ekthwst for correcting an injection correction amount with reference to a non-heating initial value map if a heater is in operation, and determines the initial value of the correction value ekthwst for correcting the injection correction amount with reference to a heating initial value map if the heater is out of operation. It should be noted herein that the initial value of the correction value ekthwst is set lower under the same condition in the heating initial value map than in the non-heating initial value map.

Abstract: A fuel injection system in the present invention is provided with a fuel injection valve (10) which incorporates a heater (20) for heating fuel before being injected. The temperature of the heater (20) is estimated on the basis of the resistance value RHtr of the heater (20). The temperature of the heater (20) estimated at or after the time of occurrence of a point of inflection in the resistance value RHtr of the heater (20) is corrected in order to reduce to zero the difference between the nucleate boiling start point temperature and the estimated temperature value of the heater (20) at the time of occurrence of the point of inflection.

Abstract: A fuel injector for an internal combustion engine includes a fuel injection valve, a heater, and a controller. The fuel injection valve is configured to supply fuel to the internal combustion engine. The heater is configured to heat the fuel in the fuel injection valve. The controller is configured to: control the fuel injection valve to stop supplying the fuel to the internal combustion engine, control the heater to execute or stop heating the fuel in the fuel injection valve, and control the fuel injection valve to prohibit the stop of supplying the fuel during execution of the heating by the heater.

Abstract: An EFI-ECU determines an initial value of a correction value ekthwst for correcting an injection correction amount with reference to a non-heating initial value map if a heater is in operation, and determines the initial value of the correction value ekthwst for correcting the injection correction amount with reference to a heating initial value map if the heater is out of operation. It should be noted herein that the initial value of the correction value ekthwst is set lower under the same condition in the heating initial value map than in the non-heating initial value map.

Abstract: A fuel injection system in the present invention is provided with a fuel injection valve (10) which incorporates a heater (20) for heating fuel before being injected. The temperature of the heater (20) is estimated on the basis of the resistance value RHtr of the heater (20). The temperature of the heater (20) estimated at or after the time of occurrence of a point of inflection in the resistance value RHtr of the heater (20) is corrected in order to reduce to zero the difference between the nucleate boiling start point temperature and the estimated temperature value of the heater (20) at the time of occurrence of the point of inflection.

Abstract: A control apparatus for an internal combustion engine according to the invention obtains a first index that indicates the amount of fuel adhering to the wall surface of an intake passage, using intake valve timing; obtains a correction value that reduces the first index, using exhaust valve timing and the intake valve timing; and calculates a second index that indicates the amount of fuel adhering to the wall surface of the intake passage, using the correction value. The control apparatus controls the amount of fuel to be injected based on at least one of the first index and the second index.

Abstract: A control apparatus for an internal combustion engine according to the invention obtains a first index that indicates the amount of fuel adhering to the wall surface of an intake passage, using intake valve timing; obtains a correction value that reduces the first index, using exhaust valve timing and the intake valve timing; and calculates a second index that indicates the amount of fuel adhering to the wall surface of the intake passage, using the correction valve. The control apparatus controls the amount of fuel to be injected based on at least one of the first index and the second index.

Abstract: An engine is automatically stopped when a predetermined amount of time has passed with a predetermined stopping condition being fulfilled, even if learning is not yet complete, when an automatic stopping condition of the engine and a learning execution condition of a control amount of the engine during idling have been fulfilled. However, the engine is prohibited from automatically stopping until the learning is complete when the learning history of the control amount has been cleared by battery disconnection or the like and is not stored. Accordingly, it is possible to both simultaneously control an idling stop when the engine is idling and learn the control amount, as well as minimize a strange sensation felt by the driver that arises from an idling stop not being performed.

Abstract: The electronic control unit sets an initial value of an inertia torque equivalent flow rate Qmg as an air flow equivalent to an inertia torque that acts on rotational elements related to a crankshaft 26, and a diminishing rate thereof, based on a shift position SP and coolant temperature Tw after the engine is cranked by a motor generator and the engine speed reaches an idle speed. The electronic control unit controls an the engine speed using an idle speed maintaining flow rate Qisc which is obtained by subtracting the inertia torque equivalent flow rate Qmg from a target idle speed maintaining flow rate Qisc*.

Abstract: The electronic control unit sets an initial value of an inertia torque equivalent flow rate Qmg as an air flow equivalent to an inertia torque that acts on rotational elements related to a crankshaft 26, and a diminishing rate thereof, based on a shift position SP and coolant temperature Tw after the engine is cranked by a motor generator and the engine speed reaches an idle speed. The electronic control unit controls an the engine speed using an idle speed maintaining flow rate Qisc which is obtained by subtracting the inertia torque equivalent flow rate Qmg from a target idle speed maintaining flow rate Qisc*.

Abstract: An engine is automatically stopped when a predetermined amount of time has passed with a predetermined stopping condition being fulfilled, even if learning is not yet complete, when an automatic stopping condition of the engine and a learning execution condition of a control amount of the engine during idling have been fulfilled. However, the engine is prohibited from automatically stopping until the learning is complete when the learning history of the control amount has been cleared by battery disconnection or the like and is not stored. Accordingly, it is possible to both simultaneously control an idling stop when the engine is idling and learn the control amount, as well as minimize a strange sensation felt by the driver that arises from an idling stop not being performed.

Abstract: A semiconductor device includes first and second conductive layers which are electrically connected to each other through a contact plug. A first insulating film is formed on the first conductive layer and has a first opening which reaches the surface of the first conductive layer. A second insulating film is formed on the first insulating film and has a second opening at the same position as the first opening. The contact plug is filled in the first and second openings and has the surface which is substantially flush with the surface of the second insulating film and also contains a metal having a high melting point. The second conductive layer is formed on the second insulating film and on the contact plug.

Abstract: A semiconductor device includes first and second conductive layers which are electrically connected to each other through a contact plug. A first insulating film is formed on the first conductive layer and has a first opening which reaches the surface of the first conductive layer. A second insulating film is formed on the first insulating film and has a second opening at the same position as the first opening. The contact plug is filled in the first and second openings and has the surface which is substantially flush with the surface of the second insulating film and also contains a metal having a high melting point. The second conductive layer is formed on the second insulating film and on the contact plug.

Abstract: A semiconductor device includes first and second conductive layers which are electrically connected to each other through a contact plug. A first insulating film is formed on the first conductive layer and has a first opening which reaches the surface of the first conductive layer. A second insulating film is formed on the first insulating film and has a second opening at the same position as the first opening. The contact plug is filled in the first and second openings and has the surface which is substantially flush with the surface of the second insulating film and also contains a metal having a high melting point. The second conductive layer is formed on the second insulating film and on the contact plug.

Abstract: A titanium film 14 is formed on a whole surface including an inner surface of a hole 10. Then the titanium film 14 outside of the interior of the hole 10 is removed by the chemical mechanical polishing (CMP) method, the resist etchback method or the ECR plasma etching method. Thereafter a titanium nitride film 15 is formed on the whole surface. Consequently, when a tungsten film 16 is formed, using a fluorine containing gas such as WF.sub.6 gas, etc., since there exists no titanium film 14 outside of the hole 10 and only the titanium nitride film 15 resistant to the fluorine containing gas exists there, no peeling-off of the titanium nitride film 15 due to corrosion of the titanium film 14 takes place, and thus it is prevented that it produces a dust source.

Abstract: A semiconductor device includes an inter-level insulating film formed on a semiconductor substrate, wiring layers formed at positions having different depths inside the inter-level insulating film, open aperture portions having different depths and formed in the inter-level insulating film so as to reach each of the wiring layer, a titanium nitride film (first conductor layer) formed on the inner surface of each of the open aperture portions and on the inter-level insulating film, a silicon oxide film (insulating film) formed on the titanium nitride film other than the titanium nitride film formed on the inner surface of each of the open aperture portions, a tungsten film (second conductor layer) formed inside each of the open aperture portions, and an aluminum wiring (third conductor layer) formed on the tungsten film.

Abstract: A semiconductor device includes an inter-level insulating film formed on a semiconductor substrate. Wiring layers are formed at different depths inside the interlevel insulating film. Open aperture portions have different depths and are formed in the inter-level insulating film so as to reach each of the wiring layers. A titanium nitride film (first conductor layer) is formed on the inner surface of each of the open aperture portions and on the inter-level insulating film. A silicon oxide film (insulating film) is formed on the titanium nitride film and hardly on the inner surface of each of the open aperture portions. A tungsten film (second conductor layer) is formed inside each of the open aperture portions. An aluminum wiring (third conductor layer) is formed on the tungsten film.

Abstract: A semiconductor device including a pair of transistors, comprises: a semiconductor substrate; a pair of gate electrodes formed in one surface of the semiconductor substrate at first portions thereof, respectively, and spaced from each other with a second portion of the semiconductor substrate therebetween; and two spaced source/drain diffused regions formed in the second portion of the semiconductor substrate and insulated from the gate electrodes. Each pair of transistors is formed of one of the gate electrodes, the source/drain diffused regions which are common to the pair of transistors, and a part of the second portion of the semiconductor substrate disposed between the source/drain diffused regions serving as a channel region common to the pair of transistors.