Abstract: A film formation apparatus includes: a chamber having an inner space in which both a body to be processed and a target are disposed so that the body to be processed and the target are opposed to each other, a first magnetic field generation section generating a magnetic field in the inner space to which the target is exposed; a second magnetic field generation section generating a perpendicular magnetic field so as to allow perpendicular magnetic lines of force thereof to pass between the target the body to be processed; and a third magnetic field generation section disposed at upstream side of the target as seen from the second magnetic field generation section.

Abstract: There is provided a film forming apparatus for forming a coating film on a surface of an object to be processed by using a sputtering method, the film forming apparatus including: a chamber for accommodating the object and a target serving as a base material for the coating film that are placed so as to face each other; an exhaust unit for reducing the pressure inside the chamber; a magnetic field generating unit for generating a magnetic field in front of the sputtering surface of the target; a direct current power supply for applying a negative direct current voltage to the target; a gas introducing unit for introducing a sputtering gas into the chamber; and a unit for preventing the entering of sputtered particles onto the object until the plasma generated between the target and the object reaches a stable state.

Abstract: A film formation apparatus includes: a chamber having a side wall and an inner space in which both a body to be processed and a target are disposed a first magnetic field generation section generating a magnetic field in the inner space a second magnetic field generation section disposed at a position close to the target, the second magnetic field generation section generating a magnetic field so as to allow perpendicular magnetic lines of force thereof to pass through a position adjacent to the target; and a third magnetic field generation section disposed at a position close to the body to be processed, the third magnetic field generation section generating a magnetic field so as to induce the magnetic lines of force to the side wall of the chamber.

Abstract: A coating surface processing method includes forming a coating on the entire surface of a base body that has fine holes or fine grooves formed on the to-be-filmed surface, including the inner wall surfaces and the inner bottom surfaces of the holes or the grooves, and flattening the coating formed on the inner wall surfaces of the holes or the grooves by carrying out a plasma processing on the surface of the coating.

Abstract: There is provided a film forming apparatus for forming a coating film on a surface of an object to be processed by using a sputtering method, the film forming apparatus including: a chamber for accommodating the object and a target serving as a base material for the coating film that are placed so as to face each other; an exhaust unit for reducing the pressure inside the chamber; a magnetic field generating unit for generating a magnetic field in front of the sputtering surface of the target; a direct current power supply for applying a negative direct current voltage to the target; a gas introducing unit for introducing a sputtering gas into the chamber; and a unit for preventing the entering of sputtered particles onto the object until the plasma generated between the target and the object reaches a stable state.

Abstract: A film formation apparatus includes: a chamber having an inner space in which both a body to be processed and a target are disposed so that the body to be processed and the target are opposed to each other, a first magnetic field generation section generating a magnetic field in the inner space to which the target is exposed; a second magnetic field generation section generating a perpendicular magnetic field so as to allow perpendicular magnetic lines of force thereof to pass between the target the body to be processed; and a third magnetic field generation section disposed at upstream side of the target as seen from the second magnetic field generation section.

Abstract: A film formation apparatus includes: a chamber in which both a body to be processed and a target are disposed; a first magnetic field generation section generating a magnetic field; and a second magnetic field generation section including a first generation portion to which a current defined as “Iu” is applied and a second generation portion to which a current defined as “Id” is applied, the first generation portion being disposed at a position close to the target, the second generation portion being disposed at a position close to the body to be processed, the second magnetic field generation section applying the currents to the first generation portion and the second generation portion so as to satisfy the relational expression Id<Iu, the second magnetic field generation section allowing perpendicular magnetic lines to pass between the target and the body to be processed.

Abstract: As a barrier metal film, a Ti film or a Ta film is formed by sputtering method on a substrate. On top of this barrier metal film there is formed a nitride film by sputtering method. A Cu film is then formed on the nitride film by CVD method and thereafter anneal processing is performed at 100 to 400° C. In this manner, by forming the Cu film, the adhesiveness between the barrier metal film and the Cu film improves.