Patents by Inventor Tongchern Ong

Tongchern Ong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrostatic discharge protection structure for deep sub-micron gate oxide
    Patent number: 6949806
    Abstract: The present disclosure provides a deep submicron electrostatic discharge (ESD) protection structure for a deep submicron integrated circuit (IC) and a method for forming such a structure. The structure includes at least two electrodes separated by a dielectric material, such as a thin gate oxide layer. In some examples, the thin gate oxide may be less than 25 ? thick. A source and drain are positioned proximate to and on opposite sides of one of the electrodes to form a channel. The drain is covered with a silicide layer that enhances the ESD protection provided by the structure. The source may also be covered with a silicide layer. In some examples, the drain may be floating.
    Type: Grant
    Filed: October 16, 2003
    Date of Patent: September 27, 2005
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Hsun Wu, Jian-Hsin Lee, Tongchern Ong
  • Electrostatic discharge protection structure for deep sub-micron gate oxide
    Publication number: 20050082619
    Abstract: The present disclosure provides a deep submicron electrostatic discharge (ESD) protection structure for a deep submicron integrated circuit (IC) and a method for forming such a structure. The structure includes at least two electrodes separated by a dielectric material, such as a thin gate oxide layer. In some examples, the thin gate oxide may be less than 25 ? thick. A source and drain are positioned proximate to and on opposite sides of one of the electrodes to form a channel. The drain is covered with a silicide layer that enhances the ESD protection provided by the structure. The source may also be covered with a silicide layer. In some examples, the drain may be floating.
    Type: Application
    Filed: October 16, 2003
    Publication date: April 21, 2005
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Hsun Wu, Jian-Hsing Lee, Tongchern Ong