Abstract: A laser speckle contrast imaging system includes a laser beam, configured to emit an object; an image capturing module, configured to capture an image data of the object; and a processing unit, coupled to the laser beam and the image capturing module, configured to generate a first image and a second image corresponding to the laser beam according to the image data, and to perform an auto-tracking function for an interest of region (ROI) of the second image and update the second image according to an auto-tracking result of the ROI.

Abstract: A preparation method of an interfering peptide targeting SARS-CoV-2 N protein includes the following steps: designing an interfering peptide segment targeting amino acids located in a dimerization domain of the SARS-CoV-2 N protein; fusing the interfering peptide segment with HIV-TAT; modifying the interfering peptide segment fused with HIV-TAT into a reverse isomer to obtain an amino acid sequence of a final interfering peptide NIP-V; and synthesizing the interfering peptide NIP-V using D-amino acids as raw materials. The above-mentioned interfering peptide drug NIP-V is able to interact with the dimerization domain of the SARS-CoV-2 N protein, inhibit the oligomerization of N protein, and then relieve the inhibition for innate immunity by the N protein, so as to achieve the purpose of inhibiting the replication of SARS-CoV-2 virus in cells and animals.

Abstract: The present invention discloses a car running board and car, comprising a first running board body, a second running board body and at least one car installation support; the first running board body is telescopically connected with the second running board body; the car installation support is rigidly connected with the first running board body and/or the second running board body on one end and with the car on the other end. Through the above method, the car running board structure of the present invention can change flexibly and contract to reduce volume during the transport, thus saving both the transport cost and storage space.

Abstract: The present invention discloses a car running board and car, comprising a first running board body, a second running board body and at least one car installation support; the first running board body is telescopically connected with the second running board body; the car installation support is rigidly connected with the first running board body and/or the second running board body on one end and with the car on the other end. Through the above method, the car running board structure of the present invention can change flexibly and contract to reduce volume during the transport, thus saving both the transport cost and storage space.

Abstract: The invention discloses a method for fabricating power-generating module with solar cell. The method includes the steps of providing a flexible substrate; forming a solar cell unit on the flexible substrate by using a high density plasma at a temperature lower than about 150° C.; and forming a circuit unit on the flexible substrate; wherein the solar cell unit is coupled to the circuit unit, so as to provide the power needed for the operation of the circuit unit.

Abstract: The invention discloses a method for fabricating power-generating module with solar cell. The method includes the steps of providing a flexible substrate; forming a solar cell unit on the flexible substrate by using a high density plasma at a temperature lower than about 150° C.; and forming a circuit unit on the flexible substrate; wherein the solar cell unit is coupled to the circuit unit, so as to provide the power needed for the operation of the circuit unit.

Abstract: A semiconductor structure fabricating method includes the following steps. Firstly, a silicon substrate is provided. The silicon substrate has a first surface and a second surface. In addition, a first semiconductor structure is formed on the first surface of the silicon substrate. Then, the second surface of the silicon substrate is textured as a rough surface. Then, a first electrode layer is formed on the rough surface.

Abstract: The invention discloses a power-generating module with solar cell and method for fabricating the same. The power-generating module includes a flexible substrate, a circuit and a solar cell. Both of the circuit and the solar cell are formed on the flexible substrate and are connected with each other, such that the solar cell is capable of providing the power needed by the circuit for operation.

Abstract: A light-trapping layer is integrated into a thin-film solar cell. It is integrated as a light-inlet layer, an intermediate layer or a shaded layer with nano-particles embedded in a transparent or non-transparent conductive film. Thus, light stays longer in an absorption layer with photocurrent increased; defects of interface between the absorption layer and the nano-material are decreased; anti-reflective effect to inlet light is enhanced; and a good integrity and a good reliability for long-time light-shining are obtained.

Abstract: A mesoporous silica having adjustable pores is obtained to form a template and thus a three-terminal metal-oxide-semiconductor field-effect transistor (MOSFET) photodetector is obtained. A gate dielectric of a nano-structural silicon-base membrane is used as infrared light absorber in it. Thus, a semiconductor photodetector made of pure silicon having a quantum-dot structure is obtained with excellent near-infrared optoelectronic response.

Abstract: A mesoporous silica having adjustable pores is obtained to form a template and thus a three-terminal metal-oxide-semiconductor field-effect transistor (MOSFET) photodetector is obtained. A gate dielectric of a nano-structural silicon-base membrane is used as infrared light absorber in it. Thus, a semiconductor photodetector made of pure silicon having a quantum-dot structure is obtained with excellent near-infrared optoelectronic response.

Abstract: The present electropolishing electrolyte comprises an acid solution and an alcohol additive having at least one hydroxy group, wherein the contact angle of the alcohol additive is smaller than the contact angle of the acid solution on a metal layer under electropolishing. The alcohol additive is selected methanol, ethanol and glycerol, and the acid solution comprises phosphoric acid. The volumetric ratio of glycerol to phosphoric acid is between 1:50 and 1:200, and is preferably 1:100. The volumetric ratio is between 1:100 and 1:150 for methanol to phosphoric acid, and between 1:100 and 1:150 for ethanol to phosphoric acid. In addition, the acid solution further comprises an organic acid selected from the group consisting of acetic acid and citric acid. The concentration is between 10000 and 12000 ppm for the acetic acid, and between 500 and 1000 ppm for citric acid.

Abstract: There is provided a silicon-based ferroelectric memory material, which includes a mesoporous silica with the nanopores thereon, and high-density arrays of nanocrystalline silicon or germanium quantum dots formed on the inner wall of the nanopores of the mesoporous silica. The silicon-based ferroelectric memory material is substantially composed of silicon and oxygen element, and the process for fabricating such a material is simple and can be done at the low temperature (<400° C.) so that the process for fabricating the silicon-based ferroelectric memory material is compatible with the semiconductor process, and is effective to prevent from cross pollution encountered in the prior art. The ferroelectric memory including the silicon-based ferroelectric memory material has the same advantages, such as high speed and long-life, as those of the conventional ferroelectric memory.

Abstract: An electropolishing process endpoint detection method is described. The method is applicable to the electropolishing of a metal layer under a fixed current or voltage, wherein a voltage current detector is installed in the electropolishing apparatus. When the electropolishing process is proceeded to the barrier layer, a noticeable change occurs to the electric current or electric voltage because the resistance of the barrier layer is different from that of the metal layer. Based on the change in the saturated current or voltage, the endpoint of the electropolishing process is detected. Further, the voltage or current supply is discontinued by feedback controlling the current or voltage and the electropolishing action is terminated.

Abstract: An electrolytic solution formulation for an electropolishing process comprises at least an acid solution and an organic additive. The acid solution includes phosphoric acid or a mixture of phosphoric acid and sulfuric acid solutions, which can form a passivation layer on the surface of the metal layer. The additive comprises at least an acid group, wherein the diffusion of the organic additive is controlled in which a concentration gradient is formed in the opening of the metal layer. The electropolishing rate at the top of the opening is thereby faster than that at the bottom of the opening. The organic additive is selected from a monocarboxylic acid compound, a dicarboxylic acid compound, a tricarboxylic acid compound, a heterocyclic carboxylic acid compound or a sulfonic acid compound.

Abstract: The present invention discloses a two-step CMP method and employed polishing compositions. In the first step, a first polishing slurry is provided to selectively polish the Al-alloy layer. Next, a second polishing slurry is provided to selectively polish the barrier layer. Accordingly, undesired surface non-planarity after the CMP process, such as metal dishing and corrosion of dielectric layers with complicated pattern geometry, can be avoided, and thus the planarization of wafer surfaces can be achieved.

Abstract: Slurry formulationf or CMP of organic-added low SOG dielectric was development. The SOG layers with various amount of organic content are subject to polish experiments using silica- and zirconia-based slurries with a variety of additives. The results indicate that, as the amount of organic content in SOG increases, CMP polish rate drops with silica-based KOH-added slurry. On the other hand, zirconia-based slurry could result in higher plish rate for both SOG (>400 nm/min) and thermal oxide. Polish selectivity ranging from 1.2 to 9.1 can be achieved by adding various amount of tetra-alkyl in ammonium hydroxide.

Abstract: An improvement on simplified fully automatic umbrella is disclosed. This umbrella comprises a shank consisting of an inner tube and an outer tube, the inner tube has at upper section a middle ring and an extension while the outer tube has at upper end a lower ring with an upper pawl; an umbrella opening spring received within the extension; a cylinder mounted around the extension and provided at lower end with an upper ring; an umbrella closing spring mounted around the inner tube; an actuating mechanism consisting of a push button, an upper insert containing a compression spring, a lower insert containing a lower pawl, an actuator and a detent, and a wire interconnected between the two inserts; a canopy structure connected to the upper, middle and lower rings; and a handle provided at bottom of the outer tube.

Abstract: An eye shield assembly for cap visor, comprising a clip body consisting of a clip and a hollow frame having rails at longitudinal opposite inner sides, a slide block displaceable on the rails within the hollow frame of the clip body, which is formed with a holder portion at a bottom side, and an eye shield with a support pivotally engaged into and suspended from the holder portion of the slide block. This eye shield assembly is readily mounted onto the visor of a cap and detached as desired.

Abstract: An FET ROM and a manufacturing process in which ROM's can be stockpiled after the gates have been formed and the source and drain implants have been made but before the write operation has been performed. At this stage, the unwritten ROM has an array of enhancement mode FET's connected in a logical NAND configuration with an overlying layer of insulation. For a write operation, the insulation is removed to expose the drain and source regions of the FET's, a conductive layer is formed over the array, and the layer is selectively etched to leave a short circuit element between the drain and source of those FET's that are to store a binary 0 and to leave switchable the FET's that are to store a 1.