Patents by Inventor Tong Earn Tay

Tong Earn Tay has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method to improve adhesion of dielectric films in damascene interconnects
    Patent number: 7078333
    Abstract: Method of improving adhesion of low dielectric constant films to other dielectric films and barrier metals in a damascene process are achieved. In one method, a low dielectric constant material layer is deposited on a substrate. Silicon ions are implanted into the low dielectric constant material layer. Thereafter, a TEOS-based silicon oxide layer is deposited overlying the low dielectric constant material whereby there is good adhesion between low dielectric constant material layer and the TEOS-based silicon oxide layer. In another method, a low dielectric constant material layer is deposited on a substrate. A silicon-based dielectric layer is deposited overlying the low dielectric constant material wherein the silicon-based dielectric layer is not silicon oxide whereby there is good adhesion between the low dielectric constant material layer and the silicon-based dielectric layer.
    Type: Grant
    Filed: September 16, 2004
    Date of Patent: July 18, 2006
    Inventors: Luona Goh, Simon Chooi, Siew Lok Toh, Tong Earn Tay
  • Method to improve adhesion of dielectric films in damascene interconnects
    Patent number: 6797605
    Abstract: Method of improving adhesion of low dielectric constant films to other dielectric films and barrier metals in a damascene process are achieved. In one method, a low dielectric constant material layer is deposited on a substrate. Silicon ions are implanted into the low dielectric constant material layer. Thereafter, a TEOS-based silicon oxide layer is deposited overlying the low dielectric constant material whereby there is good adhesion between low dielectric constant material layer and the TEOS-based silicon oxide layer. In another method, a low dielectric constant material layer is deposited on a substrate. A silicon-based dielectric layer is deposited overlying the low dielectric constant material wherein the silicon-based dielectric layer is not silicon oxide whereby there is good adhesion between the low dielectric constant material layer and the silicon-based dielectric layer.
    Type: Grant
    Filed: July 26, 2001
    Date of Patent: September 28, 2004
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Luona Goh, Simon Chooi, Siew Lok Toh, Tong Earn Tay
  • Apparatus to quantify the adhesion of film
    Patent number: 6513374
    Abstract: A new apparatus is provided for the quantification of the adhesion of a film over a substrate. In particular, the peeling force and the rate of peeling are quantified by providing a first means for measuring the peeling force, a second means for measuring the rate of peeling, a third means for securing a piece of wafer, an adhesive tape, a tape holder and a resilient, flexible component.
    Type: Grant
    Filed: January 29, 2001
    Date of Patent: February 4, 2003
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Loh-Nah Luona Goh, Siew-Lok Toh, Simon Chooi, Tong-Earn Tay
  • Method to improve adhesion of dielectric films in damascene interconnects
    Publication number: 20030022472
    Abstract: Method of improving adhesion of low dielectric constant films to other dielectric films and barrier metals in a damascene process are achieved. In one method, a low dielectric constant material layer is deposited on a substrate. Silicon ions are implanted into the low dielectric constant material layer. Thereafter, a TEOS-based silicon oxide layer is deposited overlying the low dielectric constant material whereby there is good adhesion between low dielectric constant material layer and the TEOS-based silicon oxide layer. In another method, a low dielectric constant material layer is deposited on a substrate. A silicon-based dielectric layer is deposited overlying the low dielectric constant material wherein the silicon-based dielectric layer is not silicon oxide whereby there is good adhesion between the low dielectric constant material layer and the silicon-based dielectric layer.
    Type: Application
    Filed: July 26, 2001
    Publication date: January 30, 2003
    Applicant: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Luona Goh, Simon Chooi, Siew Lok Toh, Tong Earn Tay
  • Apparatus to quantify the adhesion of film
    Publication number: 20020100334
    Abstract: A new apparatus is provided for the quantification of the adhesion of a film over a substrate. In particular, the peeling force and the rate of peeling are quantified by providing a first means for measuring the peeling force, a second means for measuring the rate of peeling, a third means for securing a piece of wafer, an adhesive tape, a tape holder and a resilient, flexible component.
    Type: Application
    Filed: January 29, 2001
    Publication date: August 1, 2002
    Inventors: Loh-Nah Luona Goh, Siew-Lok Toh, Simon Chooi, Tong-Earn Tay