Abstract: A semiconductor light emitting device may include a base semiconductor layer formed on a substrate and having defect regions therein; cavities disposed in regions corresponding to the defect regions on the base semiconductor layer; a capping layer disposed to cover at least one region of the base semiconductor layer and the cavities; and a light emitting structure disposed on the capping layer and including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Lattice defects formed in the light emitting structure may be reduced to enhance luminous efficiency.

Abstract: A method of manufacturing a semiconductor light emitting device, includes sequentially growing a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate to form a light emitting layer. The forming of the light emitting layer includes a first growth process, a second growth process and a transfer process. The first growth process uses a first susceptor having a mounting surface with a first curvature. The second growth process uses a second susceptor having a mounting surface with a second curvature different from the first curvature. The transfer process transfers the substrate from the first susceptor to the second susceptor between the first and second growth processes.