Abstract: Embodiments of the present disclosure relate to management of resources. Embodiments include receiving, from a user of a client device, first input indicating a location on a remote device and a file type. Embodiments include identifying a file corresponding to the file type at the location. Embodiments include generating a graphical representation of the file and providing the graphical representation of the file to the user. Embodiments include receiving, from the user, second input corresponding to the graphical representation of the file. Embodiments include identifying stored credentials based on the second input and initiating a virtual desktop session using the stored credentials. Embodiments include providing a remote interface to the virtual desktop session on the client device. Embodiments include launching an application within the virtual desktop session and opening the file within the application.

Abstract: An InP-based monolithic integrated chaotic semiconductor laser chip capable of feeding back randomly diffused light, being composed of six regions: a left DFB semiconductor laser, a bidirectional SOA, a left passive optical waveguide region, a doped passive optical waveguide region, a right passive optical waveguide region, and a right DFB semiconductor laser, specifically including: an N+ electrode layer, an N-type substrate, an InGaAsP lower confinement layer, an undoped InGaAsP multiple quantum well active region layer, doped particles, distributed feedback Bragg gratings, an InGaAsP upper confinement layer, a P-type heavily doped InP cover layer, a P-type heavily doped InGaAs contact layer, a P+ electrode layer, a light-emitting region, and isolation grooves. It effectively solves problems of bulky volume of the existing chaotic laser source, the time-delay signature of chaotic laser, narrow bandwidth, and low coupling efficiency of the light and the optical waveguide.

Abstract: The present disclosure relates to a calibration device for calibrating a virtual flow meter of a production system. The production system includes components for transferring fluid, where the virtual flow meter is configured to estimate a flow rate of the fluid based on property values of the components and values of variable parameters of the components. The calibration device includes a sensitivity determining module configured to calculate a first sensitivity, where the first sensitivity is used to indicate a degree of change of the values of the variable parameters relative to disturbance of the property values, and a calibration module configured to calibrate the virtual flow meter according to the first sensitivity.

Abstract: The present invention discloses a device and a method for monitoring two-stage faults of a TDM-PON with high precision. A two-stage TDM-PON system includes an OLT I, a feeder fiber II, a stage-1 1:n optical splitter III, a stage-1 branch fiber IV, a stage-2 1:n optical splitter V, a stage-2 branch fiber VI, and an optical network unit (ONU) VII. A two-stage optical network monitoring system includes a monitoring part on the OLT I side and a monitoring part on the ONU VII side, where the monitoring part on the OLT I side includes a control-end isolator-free semiconductor laser, a control-end coupler, a control-end optical coupling device, a control-end photodetector, an integrated signal acquisition and processing device, and an optical coupling device; and the monitoring part on the ONU VII side is similar to the monitoring part of the OLT I side.

Abstract: The present invention discloses a high-precision and large-dynamic-range fault monitoring device and method for a WDM-PON. The monitoring device includes a WDM-PON optical network system and an optical network monitoring system. The optical network system includes an OLT I, a feeder fiber II, a 1×n AWG III, a branch fiber IV, and an optical network unit V The optical network monitoring system includes an FP laser, a coupler, an optical coupling device, a photodetector, a signal acquisition and processing device, and an optical feedback device, where the FP laser is connected to the coupler; a large-coupling-ratio output end of the coupler is connected to an input end of the optical coupling device, and a small-coupling-ratio output end of the coupler is connected to an input end of the photodetector; the optical coupling device is installed on the feeder fiber II.

Abstract: A computer-implemented method, and associated system and computer program product, for use in a design process for an integrated circuit (IC) comprises dividing a layout of a metal layer of the IC into a grid comprising a plurality of grid regions, calculating a respective weight for each grid region of the plurality of grid regions, and forming a plurality of groups based on a similarity of the respective weights. Each group of the plurality of groups respectively comprises one or more contiguous grid regions of the plurality of grid regions. The method further comprises assigning each group of the plurality of groups to a respective routing width group type of a plurality of routing width group types, and determining a location for one or more separator cells between adjacent groups of the plurality of groups that are of different routing width group types.

Abstract: Computer implemented techniques for storage management include receiving a query from an application within an application level, which is received as a standard syntax wrapped query language query, with the standard syntax wrapped query having as a parameter, an identifier to a specific object, determining a platform type on which the received query is executable and translating the standard syntax wrapped query language query into the determined native query language used by the determined data storage platform type.

Abstract: The present invention discloses an integrated broadband chaotic semiconductor laser using optical microcavities. The arc-shaped hexagonal laser outputs light. Part of the light is totally reflected through the deformed microcavity and then reflected out of the deformed microcavity from the passive waveguide II; after entering the passive feedback waveguide, another part of the light is fed back into the deformed microcavity by the high reflection film, passes through an in-cavity ray track and then is also reflected out of the deformed microcavity from the passive waveguide II; the two-path light is coupled into the arc-shaped hexagonal laser, and finally generated chaotic laser light is directionally coupled and output through the passive waveguide I at the other end of the arc-shaped hexagonal laser. The present invention has wide broadband, flat spectrum, compact structure, and no time delay signature.

Abstract: The present disclosure provides a thermal insulation flocculus material and a preparation method thereof and a thermal insulation product, and pertains to the field of thermal insulation flocculus materials. In one exemplary embodiment, the thermal insulation flocculus material of the present disclosure includes multiple overlapped single fiber meshes; and a spherical fiber assembly at least distributed between a part of adjacent single fiber meshes. In some embodiments, the thermal insulation flocculus material has combination properties such as excellent filling power, compression-resilience property, thermal insulation property and/or wash durability or the like.

Abstract: An operating table comprises a table panel, a pad covering at least a portion of an upper face of the table panel, and a micro suction foil configured to be sandwiched between the upper face of the table panel and the pad to attach the pad to the upper face of the table panel.

Abstract: A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

Abstract: Devices having an air bearing surface (ABS), the device including a near field transducer, the near field transducer having a peg and a disc, the peg having a region adjacent the ABS, the peg including a plasmonic material selected from gold (Au), silver (Ag), copper (Cu), ruthenium (Ru), rhodium (Rh), aluminum (Al), or combinations thereof; and at least one other secondary atom selected from germanium (Ge), tellurium (Te), aluminum (Al), antimony (Sb), tin (Sn), mercury (Hg), indium (In), zinc (Zn), iron (Fe), copper (Cu), manganese (Mn), silver (Ag), chromium (Cr), cobalt (Co), and combinations thereof, wherein a concentration of the secondary atom is higher at the region of the peg adjacent the ABS than a concentration of the secondary atom throughout the bulk of the peg. Methods of forming NFTs are also disclosed.

Abstract: A device including a near field transducer, the near field transducer including gold (Au), silver (Ag), copper (Cu), or aluminum (Al), and at least two other secondary atoms, the at least two other secondary atoms selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), germanium (Ge), hydrogen (H), iodine (I), rubidium (Rb), selenium (Se), terbium (Tb), nitrogen (N), oxygen (O), carbon (C), antimony (Sb), gadolinium (Gd), samarium (Sm), thallium (Tl), cadmium (Cd), neodymium (Nd), phosphorus (P), lead (Pb), hafnium (Hf), niobium (Nb), erbium (Er), zinc (Zn), magnesium (Mg), palladium (Pd), vanadium (V), zinc (Zn), chromium (Cr), iron (Fe), lithium (Li), nickel (Ni), platinum (Pt), sodium (Na), strontium (Sr), calcium (Ca), yttrium (Y), thorium (Th), beryllium (Be), thulium (Tm), erbium

Abstract: Devices that include a write pole; a near field transducer (NFT) that includes a peg and a disk, wherein the peg is at the ABS of the device; and a diffusion barrier layer positioned between the write pole and the peg of the NFT, the diffusion barrier layer including metals, nitrides, oxides, carbides, silicides, or amorphous material.

Abstract: A monolithic integrated semiconductor random laser composed of a gain region and random feedback region, comprising: a substrate, a lower confinement layer on the substrate, an active layer on the lower confinement layer, an upper confinement layer on the active layer, a strip-shaped waveguide layer longitudinally made in middle of the upper confinement layer, a P+ electrode layer divided into two segments by an isolation groove and made on the waveguide layer, and an N+ electrode layer on a back face of the lower confinement layer. The two segments of the P+ electrode layer correspond respectively to the gain region and the random feedback region. The random feedback region uses a doped waveguide to randomly feed back light emitted and amplified by the gain region. As a result, random laser is emitted.

Abstract: A method for image processing, which comprises the following steps: Generating a first histogram from a first image; Calculating a first parameter profile from the first image indicative of the quality of the first image; Adjusting the first parameter profile to generate a second parameter profile; Using the second parameter profile to generate a statistical distribution via a statistical distribution generator, wherein the statistical distribution is characterized by at least three parameters; Using the statistical distribution to perform a histogram specification to the first histogram of the first image to generate a second histogram; Generating a second image based on the first image and the second histogram.

Abstract: Devices that include a near field transducer (NFT) including a crystalline plasmonic material having crystal grains and grain boundaries; and nanoparticles disposed in the crystal grains, on the grain boundaries, or some combination thereof, wherein the nanoparticles are oxides of, lanthanum (La), barium (Ba), strontium (Sr), erbium (Er), hafnium (Hf), germanium (Ge), or combinations thereof; nitrides of zirconium (Zr), niobium (Nb), or combinations thereof; or carbides of silicon (Si), aluminum (Al), boron (B), zirconium (Zr), tungsten (W), titanium (Ti), niobium (Nb), or combinations thereof.

Abstract: Devices having an air bearing surface (ABS), the devices including a write pole; a near field transducer (NFT) that includes a peg and a disc, wherein the peg is at the ABS of the device; a heat sink positioned adjacent the disc of the NFT; a dielectric gap positioned adjacent the peg of the NFT at the ABS of the device; and a conformal diffusion barrier layer positioned between the write pole and the dielectric gap, the disc, and the heat sink, wherein the conformal diffusion barrier layer forms at least one angle that is not greater than 135°.

Abstract: A method for image processing, which comprises the following steps: Generating a first histogram from a first image; Calculating a first parameter profile from the first image indicative of the quality of the first image; Adjusting the first parameter profile to generate a second parameter profile; Using the second parameter profile to generate a statistical distribution via a statistical distribution generator, wherein the statistical distribution is characterized by at least three parameters; Using the statistical distribution to perform a histogram specification to the first histogram of the first image to generate a second histogram; Generating a second image based on the first image and the second histogram.

Abstract: Devices that include a near field transducer (NFT), the NFT having at least one external surface; and at least one multilayer adhesion layer positioned on at least a portion of the at least one external surface, the multilayer adhesion layer including a first layer and a second layer, with the second layer being in contact with the portion of the at least one external surface of the NFT, the first layer including: yttrium (Y), scandium (Sc), zirconium (Zr), hafnium (Hf), silicon (Si), boron (B), tantalum (Ta), barium (Ba), aluminum (Al), titanium (Ti), niobium (Nb), calcium (Ca), beryllium (Be), strontium (Sr), magnesium (Mg), lithium (Li), or combinations thereof; and the second layer including: lanthanum (La), boron (B), lutetium (Lu), aluminum (Al), deuterium (D), cerium (Ce), uranium (U), praseodymium (Pr), yttrium (Y), silicon (Si), iridium (Ir), carbon (C), thorium (Th), scandium (Sc), titanium (Ti), vanadium (V), phosphorus (P), barium (Ba), europium (Eu), or combinations thereof.