Patents by Inventor Tongchuan Gao

Tongchuan Gao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230365457
    Abstract: The invention relates generally to optically high transparency and high haze structures and, more particularly, to plastic, e.g., polymer, and glass structures having a sub-wavelength texture formed on a surface thereof, which is effective to impart the optical properties of high transparency and high haze to the structures. The texture is in a grass-like or needle-like form. Additionally, the optically high transparency and high haze structures may include a transparent conductor. Furthermore, the glass structures may exhibit a self-cleaning function.
    Type: Application
    Filed: July 25, 2023
    Publication date: November 16, 2023
    Applicant: UNIVERSITY OF PITTSBURGH - OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION
    Inventors: SAJAD HAGHANIFAR, BRADLEY D. PAFCHEK, PAUL W. LEU, TONGCHUAN GAO
  • Patent number: 11773010
    Abstract: The invention relates generally to optically high transparency and high haze structures and, more particularly, to plastic, e.g., polymer, and glass structures having a sub-wavelength texture formed on a surface thereof, which is effective to impart the optical properties of high transparency and high haze to the structures. The texture is in a grass-like or needle-like form. Additionally, the optically high transparency and high haze structures may include a transparent conductor. Furthermore, the glass structures may exhibit a self-cleaning function.
    Type: Grant
    Filed: May 30, 2018
    Date of Patent: October 3, 2023
    Assignee: UNIVERSITY OF PITTSBURGH—OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION
    Inventors: Sajad Haghanifar, Bradley D. Pafchek, Paul W. Leu, Tongchuan Gao
  • Patent number: 11094528
    Abstract: Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece in a processing chamber. The processing chamber can be separated from a plasma chamber by a separation grid assembly. The method can include forming a passivation layer on the workpiece in the processing chamber using radicals generated in a first plasma in the plasma chamber. The method can include performing a surface treatment process on the workpiece in the processing chamber using a second plasma generated in the plasma chamber.
    Type: Grant
    Filed: February 22, 2019
    Date of Patent: August 17, 2021
    Assignees: BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD., MATTSON TECHNOLOGY, INC.
    Inventors: Tongchuan Gao, Grigoriy Kishko, Vijay M. Vaniapura, Michael X. Yang
  • Publication number: 20200172433
    Abstract: The invention relates generally to optically high transparency and high haze structures and, more particularly, to plastic, e.g., polymer, and glass structures having a sub-wavelength texture formed on a surface thereof, which is effective to impart the optical properties of high transparency and high haze to the structures. The texture is in a grass-like or needle-like form. Additionally, the optically high transparency and high haze structures may include a transparent conductor. Furthermore, the glass structures may exhibit a self-cleaning function.
    Type: Application
    Filed: May 30, 2018
    Publication date: June 4, 2020
    Applicant: UNIVERSITY OF PITTSBURGH - OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION
    Inventors: SAJAD HAGHANIFAR, BRADLEY D. PAFCHEK, PAUL W. LEU, TONGCHUAN GAO
  • Publication number: 20190189420
    Abstract: Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece in a processing chamber. The processing chamber can be separated from a plasma chamber by a separation grid assembly. The method can include forming a passivation layer on the workpiece in the processing chamber using radicals generated in a first plasma in the plasma chamber. The method can include performing a surface treatment process on the workpiece in the processing chamber using a second plasma generated in the plasma chamber.
    Type: Application
    Filed: February 22, 2019
    Publication date: June 20, 2019
    Inventors: Tongchuan Gao, Grigoriy Kishko, Vijay M. Vaniapura, Michael X. Yang
  • Patent number: 10217626
    Abstract: Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece in a processing chamber. The processing chamber can be separated from a plasma chamber by a separation grid assembly. The method can include forming a passivation layer on the workpiece in the processing chamber using radicals generated in a first plasma in the plasma chamber. The method can include performing a surface treatment process on the workpiece in the processing chamber using a second plasma generated in the plasma chamber.
    Type: Grant
    Filed: December 15, 2017
    Date of Patent: February 26, 2019
    Assignee: Mattson Technology, Inc.
    Inventors: Tongchuan Gao, Grigoriy Kishko, Vijay M. Vaniapura, Michael X. Yang