Patents by Inventor Tongnian SUN

Tongnian SUN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240035192
    Abstract: A polishing device for an indium phosphide substrate and a polishing process are provided, which belong to the technical field of polishing of indium phosphide.
    Type: Application
    Filed: July 5, 2021
    Publication date: February 1, 2024
    Inventors: Shujie WANG, Niefeng SUN, Yang WANG, Xiaolan LI, Yanlei SHI, Huimin SHAO, Lijie FU, Zheng LIU, Tongnian SUN, Huisheng LIU
  • Patent number: 11781240
    Abstract: The invention discloses a method for preparing an indium phosphide crystal by using an indium-phosphorus mixture, belongs to the technical field of semiconductors, and comprises the steps of preparing an indium-phosphorus mixed ball, charging, maintaining the high furnace pressure and the low temperature of the indium-phosphorus mixed ball, melting a covering agent, feeding, synthesizing and crystal growing, which is synthesized by directly melting the proportioned indium-phosphorus mixed ball. Indium powder and phosphorus powder are uniformly mixed and pressed into spherical indium-phosphorus mixed particles, then the mixture of the indium-phosphorus mixed balls and the boron oxide powder is fed into a melt with a boron oxide covering agent, and crystal growth in situ is performed after synthesis.
    Type: Grant
    Filed: September 10, 2020
    Date of Patent: October 10, 2023
    Assignee: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
    Inventors: Niefeng Sun, Shujie Wang, Yanlei Shi, Huimin Shao, Lijie Fu, Xiaolan Li, Yang Wang, Senfeng Xu, Huisheng Liu, Tongnian Sun
  • Publication number: 20230069057
    Abstract: A growth device and method for low-stress crystals are provided, which relate to the field of preparation of crystals, in particular to a device and method for preparing low-stress and low-defect crystals by using a pulling method. The growth device includes a furnace body; a crucible and a heating and insulation system which are arranged at a bottom of the furnace body; a crystal pulling mechanism, and a quartz observation window; the device further includes a liftable heating mantle mechanism including a heating mantle body, a heating mantle supporting component, a heating wire arranged around the heating mantle body, and a heating mantle lifting mechanism. The method includes: after crystals are pulled out of a melt, covering the crystals with a liftable heating mantle mechanism.
    Type: Application
    Filed: July 5, 2021
    Publication date: March 2, 2023
    Inventors: Yanlei SHI, Niefeng SUN, Shujie WANG, Lijie FU, Huimin SHAO, Hongfei ZHAO, Yaqi LI, Huisheng LIU, Tongnian SUN, Yong KANG, Xiaodan ZHANG, Xin ZHANG, Jian JIANG, Xiaolan LI, Yang WANG, Jing XUE
  • Publication number: 20230049408
    Abstract: A semiconductor phosphide injection synthesis system and a control method are provided, which belong to the technical field of preparation of semiconductor phosphides. The semiconductor phosphide injection synthesis system includes a furnace body, a shielding carrier box arranged above the furnace body by virtue of a lifting mechanism, a phosphorus source carrier arranged in the shielding carrier box, an injection pipe arranged below the phosphorus source carrier, and a crucible arranged at an inner bottom of the furnace body in a matched manner.
    Type: Application
    Filed: July 5, 2021
    Publication date: February 16, 2023
    Applicant: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
    Inventors: Niefeng SUN, Shujie WANG, Huisheng LIU, Tongnian SUN
  • Publication number: 20230038976
    Abstract: A rocking type seed crystal surface corrosion, cleaning and drying device and a process method belong to the technical field of semiconductor crystal growth, comprising a corrosion tank and a matched corrosion tank cover, a seed crystal support platform arranged at a middle position of the bottom of the corrosion tank, and a high-purity hot nitrogen introduction short straight pipe, an corrosive liquid introduction short straight pipe, a deionized water introduction short straight pipe and an overflow liquid discharge short straight pipe matched with and arranged at both sides of the corrosion tank, wherein free ends of the high-purity hot nitrogen introduction short straight pipe, the corrosive liquid introduction short straight pipe and the deionized water introduction short straight pipe are all provided with switch stop valves; the device further comprises a rocking mechanism provided at the bottom of the corrosion tank; and the seed crystal support platform comprises a support frame symmetrically distrib
    Type: Application
    Filed: August 3, 2022
    Publication date: February 9, 2023
    Inventors: Jian JIANG, Niefeng SUN, Tongnian SUN, Shujie WANG, Huimin SHAO, Lijie FU, Yanlei SHI, Xiaolan LI
  • Publication number: 20220081799
    Abstract: The invention discloses a method for preparing an indium phosphide crystal by using an indium-phosphorus mixture, belongs to the technical field of semiconductors, and comprises the steps of preparing an indium-phosphorus mixed ball, charging, maintaining the high furnace pressure and the low temperature of the indium-phosphorus mixed ball, melting a covering agent, feeding, synthesizing and crystal growing, which is synthesized by directly melting the proportioned indium-phosphorus mixed ball. Indium powder and phosphorus powder are uniformly mixed and pressed into spherical indium-phosphorus mixed particles, then the mixture of the indium-phosphorus mixed balls and the boron oxide powder is fed into a melt with a boron oxide covering agent, and crystal growth in situ is performed after synthesis.
    Type: Application
    Filed: September 10, 2020
    Publication date: March 17, 2022
    Inventors: Niefeng SUN, Shujie WANG, Yanlei SHI, Huimin SHAO, Lijie FU, Xiaolan LI, Yang WANG, Senfeng XU, Huisheng LIU, Tongnian SUN
  • Publication number: 20220074073
    Abstract: Disclosed is an apparatus for preparing a large-size single crystal, which relates to the field of semiconductor material preparation, and more particularly, to an apparatus for preparing a large-size single crystal from a plurality of small-size single crystals by connecting them in solid states. The apparatus includes a hydrocooling furnace, a solid connection chamber hermetically disposed in the hydrocooling furnace, and combined fixtures provided in the solid connection chamber, wherein a plurality of crystal pieces are fixed by the combined fixtures, a top column or a stress block is used for pressing the crystal piece through the combined fixtures, a heating wire surrounding the solid connection chamber is provided in the hydrocooling furnace, a vacuum tube is communicated with the solid connection chamber, and a thermocouple is disposed close to the combined fixtures.
    Type: Application
    Filed: September 25, 2020
    Publication date: March 10, 2022
    Inventors: Shujie WANG, Niefeng SUN, Yanlei SHI, Huimin SHAO, Xiaolan LI, Yang WANG, Lijie FU, Senfeng XU, Jian JIANG, Huisheng LIU, Tongnian SUN
  • Patent number: 11242615
    Abstract: The invention provides a growth method for preparing high-yield crystals, belongs to the technical field of single crystal growth. Auxiliary crucibles are arranged on a crucible according to different crystal types and according to the crystal orientation of crystal growth in the main crucible, the relationship between the crystal growth direction and twin crystal orientation. By controlling the angle between the auxiliary crucibles and the main crucible, the relative position between the auxiliary crucibles each other, the auxiliary crucibles realize correction on the crystal orientation of twins generated in the main crucible crystal growth process.
    Type: Grant
    Filed: April 18, 2019
    Date of Patent: February 8, 2022
    Assignee: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
    Inventors: Niefeng Sun, Shujie Wang, Tongnian Sun, Huisheng Liu, Huimin Shao, Yanlei Shi
  • Publication number: 20210355599
    Abstract: The invention provides a growth method for preparing high-yield crystals, belongs to the technical field of single crystal growth. Auxiliary crucibles are arranged on a crucible according to different crystal types and according to the crystal orientation of crystal growth in the main crucible, the relationship between the crystal growth direction and twin crystal orientation. By controlling the angle between the auxiliary crucibles and the main crucible, the relative position between the auxiliary crucibles each other, the auxiliary crucibles realize correction on the crystal orientation of twins generated in the main crucible crystal growth process.
    Type: Application
    Filed: April 18, 2019
    Publication date: November 18, 2021
    Inventors: Niefeng SUN, Shujie WANG, Tongnian SUN, Huisheng LIU, Huimin SHAO, Yanlei SHI
  • Publication number: 20210285123
    Abstract: The invention discloses a device and a method for continuous VGF crystal growth through reverse injection synthesis, relating to a device for preparing a semiconductor crystal and growing a single crystal, in particular to a method and a device for continuously growing the crystal in situ by using a VGF method and reverse injection synthesis. The device includes a furnace body, a crucible, a heat preservation system, a heating system, a temperature control system and an gas pressure regulation system, wherein the crucible is arranged in the furnace body, has a synthesis unit at its upper part, and has a crystal growth unit and a seed crystal unit at its lower part, and the synthesis unit is communicated with the crystal growth unit through capillary pores.
    Type: Application
    Filed: December 21, 2018
    Publication date: September 16, 2021
    Inventors: Shujie WANG, Niefeng SUN, Tongnian SUN, Huisheng LIU, Yanlei SHI, Huimin SHAO, Lijie FU, Jian JIANG, Xiaodan ZHANG, Xiaolan LI, Yang WANG
  • Publication number: 20200157704
    Abstract: The present invention discloses a method for carrying out phosphide in-situ injection synthesis by carrier gas, relating to a synthetic method of semiconductor crystal: step A, shielding inert gas is introduced into a furnace body through a carrier gas intake conduit; step B, a crucible is heated in the furnace body to melt a pre-synthesized raw material in the crucible; step C, the heated shielding inert gas is introduced into the furnace body through the carrier gas intake conduit; step D, a phosphorus source furnace loaded with red phosphorus is moved downwards until an injection conduit of the phosphorus source furnace is submerged in the melt; step E, the red phosphorus is heated by the phosphorus source furnace to produce phosphorus gas, and the phosphorus gas is mixed with the shielding inert gas and then injected into the melt through the injection conduit, and the phosphorus gas reacts with the melt to produce phosphide; and step F, each device is turned off after the synthesis is finished.
    Type: Application
    Filed: December 11, 2017
    Publication date: May 21, 2020
    Inventors: Niefeng SUN, Shujie WANG, Huisheng LIU, Tongnian SUN
  • Patent number: 10648100
    Abstract: The present invention discloses a method for carrying out phosphide in-situ injection synthesis by carrier gas, relating to a synthetic method of semiconductor crystal: step A, shielding inert gas is introduced into a furnace body through a carrier gas intake conduit; step B, a crucible is heated in the furnace body to melt a pre-synthesized raw material in the crucible; step C, the heated shielding inert gas is introduced into the furnace body through the carrier gas intake conduit; step D, a phosphorus source furnace loaded with red phosphorus is moved downwards until an injection conduit of the phosphorus source furnace is submerged in the melt; step E, the red phosphorus is heated by the phosphorus source furnace to produce phosphorus gas, and the phosphorus gas is mixed with the shielding inert gas and then injected into the melt through the injection conduit, and the phosphorus gas reacts with the melt to produce phosphide; and step F, each device is turned off after the synthesis is finished.
    Type: Grant
    Filed: December 11, 2017
    Date of Patent: May 12, 2020
    Assignee: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
    Inventors: Niefeng Sun, Shujie Wang, Huisheng Liu, Tongnian Sun
  • Patent number: 10519563
    Abstract: The invention provides a device and method for continuous VGF crystal growth through rotation after horizontal injection synthesis, and belongs to the technical field of semiconductor crystal synthesis and growth.
    Type: Grant
    Filed: December 11, 2017
    Date of Patent: December 31, 2019
    Assignee: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
    Inventors: Shujie Wang, Niefeng Sun, Huisheng Liu, Tongnian Sun, Yanlei Shi, Huimin Shao, Xiaolan Li, Yang Wang, Lijie Fu
  • Publication number: 20190352794
    Abstract: The invention provides a device and method for continuous VGF crystal growth through rotation after horizontal injection synthesis, and belongs to the technical field of semiconductor crystal synthesis and growth.
    Type: Application
    Filed: December 11, 2017
    Publication date: November 21, 2019
    Inventors: Shujie WANG, Niefeng SUN, Huisheng LIU, Tongnian SUN, Yanlei SHI, Huimin SHAO, Xiaolan LI, Yang WANG, Lijie FU