Abstract: A data analysis system for performing an analytic to obtain an analytic result in a computing device having memory including a data analyzer interface, at least one interlocking trees datastore within the associated memory, and at least one analytic application executed. The data analysis system of the invention also includes a plurality of interlocking trees datastores wherein the at least one interlocking trees datastore is selected from the plurality of interlocking trees datastores in accordance with the data analyzer interface. The system can include a plurality of data sources wherein the at least one interlocking trees datastore is created from a data source selected from the plurality of data sources in accordance with the data analyzer interface. The at least one interlocking trees datastore further can be a static interlocking trees datastore or a dynamic interlocking trees datastore. The at least one interlocking trees datastore continuously records new data.

Abstract: A method for generating data for a KStore includes collecting modeled process defining parameters to provide a defined modeled process and instantiating a first simulator. A data stream is created by the simulator in accordance with the defined modeled process and a data stream is transmitted to a data storage device. Executing a single thread and executing a plurality of threads by the first simulator are set forth. A single set of modeled process defining parameters is collected. A data stream of the single modeled process is provided in accordance with the single set of modeled process defining parameters. A second simulator can be instantiated and a single thread or a plurality of threads can be executed on the second simulator. A plurality of sets of modeled process defining parameters is collected and a plurality data streams of the modeled processes are provided in accordance with the plurality of sets of modeled process defining parameters.

Abstract: A method of fabricating a thin film resistor (100). The resistor material (104), e.g., NiCr, is deposited. A hard mask material (106), e.g., TiW, may be deposited over the resistor material (104). The resistor material (104) and hard mask material (106) are patterned and sputter etched to form the resistor body. For example, a sputter etch chemistry comprising BCl3, Cl2, and Ar may be used to etch the resistor material.

Abstract: A method of fabricating a thin film resistor (100) without a hardmask or resistor head. The resistor material (104), e.g., NiCr, is deposited. The resistor material (104) is patterned and sputter etched to form the resistor body without first depositing a hardmask material. For example, a sputter etch chemistry comprising BCl3, Cl2, and Ar may be used to etch the resistor material.

Abstract: The present invention provides method of manufacturing a metal-insulator-metal capacitor (100). A method of manufacturing includes depositing a first refractory metal layer (105) over a semiconductor substrate (110). The first refractory metal layer (105) over a capacitor region (200) of the semiconductor substrate (110) is removed and a second refractory metal (300) is deposited over the capacitor region (200). Other aspects of the present invention include a metal-insulator-metal capacitor (900) and a method of manufacturing an integrated circuit (1000).

Abstract: An embodiment of the invention is a Schottky diode 22 having a semiconductor substrate 3, a first metal 24, a barrier layer 26, and second metal 28. Another embodiment of the invention is a method of manufacturing a Schottky diode 22 that includes providing a semiconductor substrate 3, forming a barrier layer 26 over the semiconductor substrate 3, forming a first metal layer 23 over the semiconductor substrate 3, annealing the semiconductor substrate 3 to form areas 24 of reacted first metal and areas 23 of un-reacted first metal, and removing selected areas 23 of the un-reacted first metal. The method further includes forming a second metal layer 30 over the semiconductor substrate 3 and annealing the semiconductor substrate 3 to form areas 28 of reacted second metal and areas 30 of un-reacted second metal.

Abstract: An embodiment of the invention is a Schottky diode 22 having a semiconductor substrate 3, a first metal 24, a barrier layer 26, and second metal 28. Another embodiment of the invention is a method of manufacturing a Schottky diode 22 that includes providing a semiconductor substrate 3, forming a barrier layer 26 over the semiconductor substrate 3, forming a first metal layer 23 over the semiconductor substrate 3, annealing the semiconductor substrate 3 to form areas 24 of reacted first metal and areas 23 of un-reacted first metal, and removing selected areas 23 of the un-reacted first metal.

Abstract: A method of producing a slurry of material effective for application to designated regions on cigarette paper to affect the burn rate in the designated regions, includes the steps of cooking a fibrous cellulosic material, bleaching the material, pressing the cooked and bleached material to remove liquid, drying the pressed material, milling the dried material to produce fibers of a desired size and mixing the milled material with water. Flax straw can be used as one source of the fibrous cellulosic material, and can be subjected to a hammering process for removal of non-fibrous components of the flax straw and for reduction in the fiber size before the cooking of the fibrous cellulosic material.

Abstract: An electronic system includes a common power bus and a variable load connected to the common power bus. A first power supply output node and a first sense line node of a first power supply are connected to the common power bus. A second power supply output node and a second sense line node of a second power supply are connected to the common power bus. A sense line load adjustment circuit is linked to the common power bus, the first sense line node, and the second sense line node. The sense line load adjustment circuit is configured to generate a mirror voltage that provides a corrected reference voltage at the first sense line node and the second sense line node in the presence of a relatively small variable load.

Abstract: A method and apparatus of manufacturing a web which is striped with add-on material, comprising: a first slurry supply which forms a sheet of base web and moves the sheet along a first path; a second slurry supply; and a moving orifice applicator operative so as to repetitively discharge the second slurry upon the moving sheet of base web. The moving orifice applicator includes a chamber box arranged to establish a reservoir of the second slurry across the first path, an endless belt having slotted orifices, the endless belt received through the chamber box, and a drive arrangement operative upon the endless belt to continuously move the orifices along an endless-path and repetitively through the chamber box. The orifices communicate with the reservoir to discharge the second slurry as bands of add-on material to the base web. The slotted orifices can be spaced apart along the belt and oriented so as to be angled with respect to the travel direction of the belt and parallel to each other.

Abstract: A method and apparatus of manufacturing a web which is striped with add-on material, comprising: a first slurry supply which forms a sheet of base web and moves the sheet along a first path; a second slurry supply; and a moving orifice applicator operative so as to repetitively discharge the second slurry upon the moving sheet of base web. The moving orifice applicator includes a chamber box arranged to establish a reservoir of the second slurry across the first path, an endless belt having slotted orifices, the endless belt received through the chamber box, and a drive arrangement operative upon the endless belt to continuously move the orifices along an endless path and repetitively through the chamber box. The orifices communicate with the reservoir to discharge the second slurry as bands of add-on material to the base web. The slotted orifices can be spaced apart along the belt and oriented so as to be angled with respect to the travel direction of the belt and parallel to each other.