Patents by Inventor Tony C. Krauth

Tony C. Krauth has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of photo-processing photoresist
    Patent number: 6645703
    Abstract: The invention encompasses a method of forming photoresist on a semiconductor wafer. A wafer is coated with a first layer of photoresist to define a first photoresist-coated wafer. The first photoresist-coated wafer is placed on a temperature-regulated mass and thermally equilibrated to a temperature. Subsequently, the first photoresist-coated wafer is photo-processed. After the photo-processing, the wafer is coated with a second layer of photoresist to define a second photoresist-coated wafer. The second photoresist-coated wafer is placed on the temperature-regulated mass and thermally equilibrated to the same temperature that the first photoresist-coated wafer had been equilibrated to. Subsequently, the second layer of photoresist is photo-processed. The invention also encompasses a reticle forming method. A layer of masking material is formed over a reticle substrate, and the reticle substrate is then placed on a temperature-regulated mass.
    Type: Grant
    Filed: June 27, 2001
    Date of Patent: November 11, 2003
    Assignee: Micron Technology, Inc.
    Inventors: Ziad R. Hatab, Paul D. Shirley, Tony C. Krauth
  • Reticle forming methods
    Patent number: 6482552
    Abstract: The invention encompasses a method of forming photoresist on a semiconductor wafer. A wafer is coated with a first layer of photoresist to define a first photoresist-coated wafer. The first photoresist-coated wafer is placed on a temperature-regulated mass and thermally equilibrated to a temperature. Subsequently, the first photoresist-coated wafer is photo-processed. After the photo-processing, the wafer is coated with a second layer of photoresist to define a second photoresist-coated wafer. The second photoresist-coated wafer is placed on the temperature-regulated mass and thermally equilibrated to the same temperature that the first photoresist-coated wafer had been equilibrated to. Subsequently, the second layer of photoresist is photo-processed. The invention also encompasses a reticle forming method. A layer of masking material is formed over a reticle substrate, and the reticle substrate is then placed on a temperature-regulated mass.
    Type: Grant
    Filed: October 18, 1999
    Date of Patent: November 19, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Ziad R. Hatab, Paul D. Shirley, Tony C. Krauth
  • RETICLE FORMING METHODS
    Publication number: 20020136960
    Abstract: The invention encompasses a method of forming photoresist on a semiconductor wafer. A wafer is coated with a first layer of photoresist to define a first photoresist-coated wafer. The first photoresist-coated wafer is placed on a temperature-regulated mass and thermally equilibrated to a temperature. Subsequently, the first photoresist-coated wafer is photo-processed. After the photo-processing, the wafer is coated with a second layer of photoresist to define a second photoresist-coated wafer. The second photoresist-coated wafer is placed on the temperature-regulated mass and thermally equilibrated to the same temperature that the first photoresist-coated wafer had been equilibrated to. Subsequently, the second layer of photoresist is photo-processed. The invention also encompasses a reticle forming method. A layer of masking material is formed over a reticle substrate, and the reticle substrate is then placed on a temperature-regulated mass.
    Type: Application
    Filed: October 18, 1999
    Publication date: September 26, 2002
    Inventors: ZIAD R. HATAB, PAUL D. SHIRLEY, TONY C. KRAUTH
  • Methods of photo-processing photoresist
    Publication number: 20010038955
    Abstract: The invention encompasses a method of forming photoresist on a semiconductor wafer. A wafer is coated with a first layer of photoresist to define a first photoresist-coated wafer. The first photoresist-coated wafer is placed on a temperature-regulated mass and thermally equilibrated to a temperature. Subsequently, the first photoresist-coated wafer is photo-processed. After the photo-processing, the wafer is coated with a second layer of photoresist to define a second photoresist-coated wafer. The second photoresist-coated wafer is placed on the temperature-regulated mass and thermally equilibrated to the same temperature that the first photoresist-coated wafer had been equilibrated to. Subsequently, the second layer of photoresist is photo-processed. The invention also encompasses a reticle forming method. A layer of masking material is formed over a reticle substrate, and the reticle substrate is then placed on a temperature-regulated mass.
    Type: Application
    Filed: June 27, 2001
    Publication date: November 8, 2001
    Inventors: Ziad R. Hatab, Paul D. Shirley, Tony C. Krauth