Patents by Inventor Tony Chiag

Tony Chiag has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Atomic layer deposition of metal oxide materials for memory applications
    Patent number: 8466446
    Abstract: Embodiments of the invention generally relate to nonvolatile memory devices, such as a ReRAM cells, and methods for manufacturing such memory devices, which includes optimized, atomic layer deposition (ALD) processes for forming metal oxide film stacks. The metal oxide film stacks contain a metal oxide coupling layer disposed on a metal oxide host layer, each layer having different grain structures/sizes. The interface disposed between the metal oxide layers facilitates oxygen vacancy movement. In many examples, the interface is a misaligned grain interface containing numerous grain boundaries extending parallel to the electrode interfaces, in contrast to the grains in the bulk film extending perpendicular to the electrode interfaces. As a result, oxygen vacancies are trapped and released during switching without significant loss of vacancies.
    Type: Grant
    Filed: September 12, 2012
    Date of Patent: June 18, 2013
    Assignee: Intermolecular, Inc.
    Inventors: Yun Wang, Vidyut Gopal, Imran Hashim, Dipankar Pramanik, Tony Chiag
  • Atomic layer deposition of metal oxide materials for memory applications
    Patent number: 8288297
    Abstract: Embodiments of the invention generally relate to nonvolatile memory devices, such as a ReRAM cells, and methods for manufacturing such memory devices, which includes optimized, atomic layer deposition (ALD) processes for forming metal oxide film stacks. The metal oxide film stacks contain a metal oxide coupling layer disposed on a metal oxide host layer, each layer having different grain structures/sizes. The interface disposed between the metal oxide layers facilitates oxygen vacancy movement. In many examples, the interface is a misaligned grain interface containing numerous grain boundaries extending parallel to the electrode interfaces, in contrast to the grains in the bulk film extending perpendicular to the electrode interfaces. As a result, oxygen vacancies are trapped and released during switching without significant loss of vacancies.
    Type: Grant
    Filed: September 1, 2011
    Date of Patent: October 16, 2012
    Assignee: Intermolecular, Inc.
    Inventors: Yun Wang, Vidyut Gopal, Imran Hashim, Dipankar Pramanik, Tony Chiag