Abstract: New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition-polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.

Abstract: New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition-polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.

Abstract: Novel compositions and methods of using those compositions to form high refractive index coatings are provided. The compositions preferably comprise both a reactive solvent and a high refractive index compound. Preferred reactive solvents include aromatic resins that are functionalized with one or more reactive groups (e.g., epoxides, vinyl ethers, oxetane), while preferred high refractive index compounds include aromatic epoxides, vinyl ethers, oxetanes, phenols, and thiols. An acid or crosslinking catalyst is preferably also included. The inventive compositions are stable under ambient conditions and can be applied to a substrate to form a layer and cured via light and/or heat application. The cured layers have high refractive indices and light transmissions.

Abstract: Novel compositions and methods of using those compositions to form metal oxide films or coatings are provided. The compositions comprise an organometallic oligomer and an organic polymer or oligomer dispersed or dissolved in a solvent system. The compositions have long shelf lives and can be prepared by easy and reliable preparation procedures. The compositions can be cured to cause conversion of the composition into films of metal oxide interdispersed with organic polymer or oligomer. The cured films have high refractive indices, high optical clarities, and good mechanical stabilities at film thicknesses of greater than about 1 ?m.

Abstract: New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition-polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.

Abstract: A composition and a method for forming an anti-reflective layer for DUV microlithographic processes is disclosed. The compositions of the present invention includes a polymer dissolved in a suitable solvent. The polymers are polysulfone and polyurea polymers which possess inherent light absorbing properties at deep ultraviolet wavelengths. In accordance with the method of the present invention, these compositions are applied to a substrate to form an anti-reflective coating, and thereafter a photoresist material that is compatible with the anti-reflective coating is applied.

Abstract: Base-soluble release layer compositions for microlithographic processing, comprising nonamic acid functionalized polyamic acid/imide resins are disclosed. These materials permit concurrent lithographic development of photoresist and release layers. They also afford effective lift-off, by alkaline media, even after high imidization.

Abstract: A composition and a method for forming an anti-reflective layer for DUV microlithographic processes is disclosed. The compositions of the present invention includes a polymer dissolved in a suitable solvent. The polymers are polysulfone and polyurea polymers which possess inherent light absorbing properties at deep ultraviolet wavelengths. In accordance with the method of the present invention, these compositions are applied to a substrate to form an anti-reflective coating, and thereafter a photoresist material that is compatible with the anti-reflective coating is applied.

Abstract: Nonamic acidic functionalized diamines and dianhydrides are condensed to produce abnormal acid functionalized polyamic acid/imide resins which surprisingly afford effective lift-off, by alkaline media, even after higher imidization.