Patents by Inventor Tony Kaushal
Tony Kaushal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230002891Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.Type: ApplicationFiled: September 7, 2022Publication date: January 5, 2023Inventors: Damodar Rajaram SHANBHAG, Guangbi YUAN, Thadeous BAMFORD, Curtis Warren BAILEY, Tony KAUSHAL, Krishna BIRRU, William SCHLOSSER, Bo GONG, Huatan QIU, Fengyuan LAI, Leonard Wai Fung KHO, Anand CHANDRASHEKAR, Andrew H. BRENINGER, Chen-Hua HSU, Geoffrey HOHN, Gang LIU, Rohit KHARE
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Publication number: 20220275504Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.Type: ApplicationFiled: May 16, 2022Publication date: September 1, 2022Inventors: Damodar Rajaram SHANBHAG, Guangbi YUAN, Thadeous BAMFORD, Curtis Warren BAILEY, Tony KAUSHAL, Krishna BIRRU, William SCHLOSSER, Bo GONG, Huatan QIU, Fengyuan LAI, Leonard Wai Fung KHO, Anand CHANDRASHEKAR, Andrew H. BRENINGER, Chen-Hua HSU, Geoffrey HOHN, Gang LIU, Rohit KHARE
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Patent number: 11365479Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.Type: GrantFiled: July 22, 2020Date of Patent: June 21, 2022Assignee: Lam Research CorporationInventors: Damodar Shanbhag, Guangbi Yuan, Thadeous Bamford, Curtis Warren Bailey, Tony Kaushal, Krishna Birru, William Schlosser, Bo Gong, Huatan Qiu, Fengyuan Lai, Leonard Wai Fung Kho, Anand Chandrashekar, Andrew H. Breninger, Chen-Hua Hsu, Geoffrey Hohn, Gang Liu, Rohit Khare
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Publication number: 20200347497Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.Type: ApplicationFiled: July 22, 2020Publication date: November 5, 2020Inventors: Damodar Shanbhag, Guangbi Yuan, Thadeous Bamford, Curtis Warren Bailey, Tony Kaushal, Krishna Birru, William Schlosser, Bo Gong, Huatan Qiu, Fengyuan Lai, Leonard Wai Fung Kho, Anand Chandrashekar, Andrew H. Breninger, Chen-Hua Hsu, Geoffrey Hohn, Gang Liu, Rohit Khare
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Patent number: 10760158Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.Type: GrantFiled: April 16, 2018Date of Patent: September 1, 2020Assignee: Lam Research CorporationInventors: Damodar Shanbhag, Guangbi Yuan, Thadeous Bamford, Curtis Warren Bailey, Tony Kaushal, Krishna Birru, William Schlosser, Bo Gong, Fengyuan Lai, Leonard Wai Fung Kho, Anand Chandrashekar, Andrew H. Breninger, Chen-Hua Hsu, Geoffrey Hohn, Gang Liu, Rohit Khare, Huatan Qiu
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Publication number: 20190185999Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.Type: ApplicationFiled: April 16, 2018Publication date: June 20, 2019Inventors: Damodar Shanbhag, Guangbi Yuan, Thadeous Bamford, Curtis Warren Bailey, Tony Kaushal, Krishna Birru, William Schlosser, Bo Gong, Huatan Qiu, Fengyuan Lai, Leonard Wai Fung Kho, Anand Chandrashekar, Andrew H. Breninger, Chen-Hua Hsu, Geoffrey Hohn, Gang Liu, Rohit Khare
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Patent number: 10217614Abstract: A gas distribution plate for a substrate processing system includes a ceramic lower portion of the gas distribution plate including a plurality of ceramic green sheets. A ceramic upper portion of the gas distribution plate includes a plurality of ceramic green sheets. An electrode is printed on at least one of an upper surface of the ceramic lower portion and a lower surface of the ceramic upper portion using metal screen printing. A first plurality of through holes is machined through the ceramic lower portion and the ceramic upper portion of the gas distribution plate prior to sintering.Type: GrantFiled: January 12, 2015Date of Patent: February 26, 2019Assignee: LAM RESEARCH CORPORATIONInventors: Jeremy Tucker, Ramkishan Rao Lingampalli, Tony Kaushal
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Publication number: 20160203952Abstract: A gas distribution plate for a substrate processing system includes a ceramic lower portion of the gas distribution plate including a plurality of ceramic green sheets. A ceramic upper portion of the gas distribution plate includes a plurality of ceramic green sheets. An electrode is printed on at least one of an upper surface of the ceramic lower portion and a lower surface of the ceramic upper portion using metal screen printing. A first plurality of through holes is machined through the ceramic lower portion and the ceramic upper portion of the gas distribution plate prior to sintering.Type: ApplicationFiled: January 12, 2015Publication date: July 14, 2016Inventors: Jeremy Tucker, Ramkishan Rao Lingampalli, Tony Kaushal
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Patent number: 9202736Abstract: A method for refurbishing at least a portion of an electrostatic chuck. The method comprises removing a first dielectric component from a fluid distribution element of the electrostatic chuck and replacing the first dielectric component with a second dielectric component.Type: GrantFiled: July 31, 2007Date of Patent: December 1, 2015Assignee: Applied Materials, Inc.Inventors: Kadthala Ramaya Narendrnath, Dmitry Lubomirsky, Xinglong Chen, Sudhir Gondhalekar, Muhammad Rasheed, Tony Kaushal
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Patent number: 8108981Abstract: A method of making an electrostatic chuck comprising positioning a plate into a channel in a body to form a plenum and inserting a dielectric component into an opening in the plate, where the dielectric component defines a portion of a passage from the plenum. Thereafter, depositing a dielectric layer covering at least a portion of the body and at least a portion of the plate to form a support surface. The dielectric layer is polished to a specified thickness. In one embodiment, the polishing process forms an opening through the dielectric layer to enable the dielectric component to define a passage between the support surface and the plenum. In another embodiment, at least a portion of the dielectric layer is porous proximate the dielectric component such that the porous dielectric layer and the dielectric component form a passage between the support surface and the plenum.Type: GrantFiled: July 31, 2007Date of Patent: February 7, 2012Assignee: Applied Materials, Inc.Inventors: Dmitry Lubomirsky, Kadthala Ramaya Narendranath, Xinglong Chen, Sudhir Gondhalekar, Muhammad Rasheed, Tony Kaushal
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Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing
Patent number: 7848076Abstract: A method and apparatus for providing a fluid distribution element for an electrostatic chuck that reduces plasma formation and arcing within heat transfer fluid passages. One embodiment comprises a plate and a dielectric component, where the dielectric component is inserted into the plate. The plate is adapted to be positioned within a channel to define a plenum, wherein the dielectric component provides at least a portion of a fluid passage coupled to the plenum. A porous dielectric layer, formed upon the dielectric component, provides at least another portion of a fluid passage coupled to the plenum. In other embodiments, the fluid distribution element comprises various arrangements of components to define a fluid passage that does not provide a line-of-sight path from the support surface for a substrate to a plenum.Type: GrantFiled: July 31, 2007Date of Patent: December 7, 2010Assignee: Applied Materials, Inc.Inventors: Kadthala Ramaya Narendranath, Dmitry Lubomirsky, Xinglong Chen, Sudhir Goodhalekar, Muhammad Rasheed, Tony Kaushal -
Publication number: 20090034148Abstract: A method of making an electrostatic chuck comprising positioning a plate into a channel in a body to form a plenum and inserting a dielectric component into an opening in the plate, where the dielectric component defines a portion of a passage from the plenum. Thereafter, depositing a dielectric layer covering at least a portion of the body and at least a portion of the plate to form a support surface. The dielectric layer is polished to a specified thickness. In one embodiment, the polishing process forms an opening through the dielectric layer to enable the dielectric component to define a passage between the support surface and the plenum. In another embodiment, at least a portion of the dielectric layer is porous proximate the dielectric component such that the porous dielectric layer and the dielectric component form a passage between the support surface and the plenum.Type: ApplicationFiled: July 31, 2007Publication date: February 5, 2009Applicant: Applied Materials, Inc.Inventors: Dmitry Lubomirsky, Xinglong Chen, Sudhir Gondhalekar, Kadthala Ramaya Narendrnath, Muhammad Rasheed, Tony Kaushal
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Publication number: 20090034149Abstract: A method for refurbishing at least a portion of an electrostatic chuck. The method comprises removing a first dielectric component from a fluid distribution element of the electrostatic chuck and replacing the first dielectric component with a second dielectric component.Type: ApplicationFiled: July 31, 2007Publication date: February 5, 2009Applicant: Applied Materials, Inc.Inventors: Dmitry Lubomirsky, Xinglong Chen, Sudhir Gondhalekar, Kadthala Ramaya Narendrnath, Muhammad Rasheed, Tony Kaushal
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Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing
Publication number: 20090034147Abstract: A method and apparatus for providing a fluid distribution element for an electrostatic chuck that reduces plasma formation and arcing within heat transfer fluid passages. One embodiment comprises a plate and a dielectric component, where the dielectric component is inserted into the plate. The plate is adapted to be positioned within a channel to define a plenum, wherein the dielectric component provides at least a portion of a fluid passage coupled to the plenum. A porous dielectric layer, formed upon the dielectric component, provides at least another portion of a fluid passage coupled to the plenum. In other embodiments, the fluid distribution element comprises various arrangements of components to define a fluid passage that does not provide a line-of-sight path from the support surface for a substrate to a plenum.Type: ApplicationFiled: July 31, 2007Publication date: February 5, 2009Applicant: Applied Materials, Inc.Inventors: Kadthala Ramaya Narendrnath, Xinglong Chen, Sudhir Gondhalekar, Dmitry Lubomirsky, Muhammad Rasheed, Tony Kaushal -
Publication number: 20070022958Abstract: An effluent abatement system 200 that may be used to abate F2 gas content of effluent exhausted from a process chamber 35, such as effluent from a CVD chamber cleaning process, includes a catalytic reactor 250 to reduce the content of F2 in the effluent 100. The system may further include a prescrubber 230 to add reactive gases to the effluent 100 and/or to treat the effluent 100 prior to treatment in the catalytic reactor 250. Alternatively reactive gases can be added to the effluent 100 by a gas source 220.Type: ApplicationFiled: April 24, 2006Publication date: February 1, 2007Inventors: Shamouil Shamouilian, Mehran Moalem, Tony Kaushal
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Publication number: 20050032381Abstract: Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.Type: ApplicationFiled: September 13, 2004Publication date: February 10, 2005Inventors: Yongsik Moon, David Mai, Kapila Wijekoon, Rajeev Bajaj, Rahul Surana, Yongqi Hu, Tony Kaushal, Shijian Li, Jui-Lung Li, Shi-Ping Wang, Gary Lam, Fred Redeker