Abstract: Semiconductor devices and methods for making such devices using nitride consumption LOCOS oxidation are described. The semiconductor devices contain a planar field oxide structure that has been grown using a nitride layer as an oxidation mask. Once the field oxide structure has been grown, the nitride mask is not etched away, but rather converted to an oxide layer by an oxidation process using radicals of hydrogen and oxygen. The semiconductor devices also contain a shielded gate trench MOSFET that can be created using an oxide layer with an overlying nitride layer as the channel (sidewall) gate dielectric. An inter-poly-dielectric (IPD) layer can be formed from a thermally grown oxide which uses the nitride layer as a oxidation mask. The thickness of the IPD layer can be adjusted to any thickness needed with minimal effect of the channel gate dielectric layer.

Abstract: A diabetic care overview wristwatch provides a bodily attached watch which incorporates additional functions required for daily diabetes management. A raised numeric keypad encircles a watch face, and minus, equals and clear keys are provided adjacent the watch band. On the display face, a standard time display is provided. A number of additional icons signal various conditions, including low battery, the need for blood glucose testing, the need for insulin injection or oral medication, and a special “thumbs up” signifing proper calculation of carbohydrate counts in diet management. In the event the carbohydrate calculation is improper, a negative carbohydrate count will be displayed. Several alarms are programmable through a depressed key on the side of the watch, and the case is designed to be waterproof. On the back side of the case, the word “diabetic” or other similar legend is imprinted.