Abstract: An encapsulated device comprises: an organic optoelectronic component exhibiting at least one sensitive surface protected from oxygen and/or water vapor; and a multilayer encapsulation structure covering the sensitive surface, comprising at least one layer made of organic material interposed between first and second barrier layers made of nonmetallic inorganic material impermeable to oxygen and water vapor; wherein the barrier layers are made of a material chosen from a stoichiometric metal oxide, stoichiometric silicon oxide and a silicon oxynitride and produced by atomic layer deposition, and wherein the multilayer encapsulation structure also comprises at least one active layer containing a nonstoichiometric oxide exhibiting an oxygen deficiency, also interposed between the first and said second barrier layers. A process for encapsulating a component exhibiting a “sensitive” surface protected from oxygen and/or water vapor by producing a multilayer encapsulation structure is provided.

Abstract: The invention relates to an organic optoelectronic device which is protected from ambient air by a sealed encapsulation structure of the type including at least one thin layer. The device includes a substrate; at least one light-emitting unit deposited on the substrate, incorporating internal electrodes and external electrodes defining an active zone and, between the electrodes, a stack of organic films; and a sealed encapsulation structure having one or more thin layers including at least one inorganic layer placed on top of the light-emitting unit and encasing same laterally. The device also includes a pre-encapsulation structure located between the external electrode and the encapsulation structure and which includes a buffer layer covering the external electrode and contains a heterocyclic organometallic complex having a glass transition temperature above 80° C., and a barrier layer covering the buffer layer and contains a silicon oxide SiOx, wherein x is 0<x<2.

Abstract: The invention relates to an encapsulation process for an electronic component (2). The component (2) is connected to an electrical contact track composed of a metal layer (101). The process according to the invention comprises the following steps: deposition of a titanium nitride layer (102) directly on at least part of the electrical contact track (101); and deposition of an aluminum oxide layer (4) by atomic layer deposition, such that the encapsulation layer (4) directly covers the titanium nitride layer (102). The process according to the invention enables electrical contact through the encapsulation layer (4). The invention also relates to an electronic device obtained using such a process.

Abstract: The invention relates to an organic optoelectronic device which is protected from ambient air by a sealed encapsulation structure of the type including at least one thin layer. The device includes a substrate; at least one light-emitting unit deposited on the substrate, incorporating internal electrodes and external electrodes defining an active zone and, between the electrodes, a stack of organic films; and a sealed encapsulation structure having one or more thin layers including at least one inorganic layer placed on top of the light-emitting unit and encasing same laterally. The device also includes a pre-encapsulation structure located between the external electrode and the encapsulation structure and which includes a buffer layer covering the external electrode and contains a heterocyclic organometallic complex having a glass transition temperature above 80° C., and a barrier layer covering the buffer layer and contains a silicon oxide SiOx, wherein x is 0<x<2.

Abstract: The present invention relates to a reactor for atomic layer deposition (ALD), comprising a reaction chamber comprising a platen and bounded internally by surfaces; at least one inlet orifice and at least one outlet orifice, each emerging from one of the surfaces bounding the chamber. The reactor furthermore comprises, within it, at least one wall apertured with at least one orifice, the apertured wall extending around the platen and over at least most of the height between the lower surface and the upper surface, at least one orifice in at least one of the apertured walls not facing the inlet orifice so as to form chicanes in the flow of gaseous precursor from each inlet orifice to the platen.

Abstract: An organic optoelectronic device incorporating a hermetic thin-film encapsulation, and encapsulation method are provided. This device has a useful emission or absorption face and, behind this face, a substrate coated with an array of radiation-emitting or radiation-absorbing organic structures inserted between, and electrically contacting, electrodes that are respectively proximal and distal relative to the substrate. Separating beads between structures, composed of an insulating material, extend between the respective proximal electrodes of the structures from peripheral edges of these electrodes. The device includes a hermetic encapsulation that has at least one inorganic internal film surmounting the distal electrode, a photosensitive polymer layer covering this internal film, and a dielectric inorganic external film acting as a barrier covering the polymer layer.

Abstract: The invention relates to a method for making an electronic display device (1) having a screen (3) covered by a protection plate, and to a substrate (2) covered by said screen for obtaining such a device. The method comprises the following steps: a) applying glue (10) at the non cross-linked state substantially on the entire surface of the screen and/or the assembling surface (11a) of the plate (11) following a deposit on the screen connection area (5) of at least one organic layer (15) for protecting the connection area from the glue; applying the assembling surface against the screen via the glue; c) emitting a radiation through the plate for cross-linking the glue; and d) removing a portion of the plate covering the connection area so that the latter can be electrically accessible, the protection layer being removed from the connection area upon said removal or during a further surface processing step.

Abstract: The invention relates to an encapsulation process for an electronic component (2). The component (2) is connected to an electrical contact track composed of a metal layer (101). The process according to the invention comprises the following steps: deposition of a titanium nitride layer (102) directly on at least part of the electrical contact track (101); and deposition of an aluminium oxide layer (4) by atomic layer deposition, such that the encapsulation layer (4) directly covers the titanium nitride layer (102). The process according to the invention enables electrical contact through the encapsulation layer (4). The invention also relates to an electronic device obtained using such a process.

Abstract: The invention relates to an organic optoelectronic device which is protected from ambient air by a sealed encapsulation structure of the type including at least one thin layer. The device includes a substrate; at least one light-emitting unit deposited on the substrate, incorporating internal electrodes and external electrodes defining an active zone and, between the electrodes, a stack of organic; and a sealed encapsulation structure having one or more thin layers including at least one inorganic layer placed on top of the light-emitting unit and encasing same laterally. The device also includes a pre-encapsulation structure located between the external electrode and the encapsulation structure and which includes a buffer layer covering the external electrode and contains a heterocyclic organometallic complex having a glass transition temperature above 80° C., and a barrier layer covering the buffer layer and contains a silicon oxide SiOx, wherein x is 0<x<2.

Abstract: An organic optoelectronic device incorporating a hermetic thin-film encapsulation, and encapsulation method are provided. This device-has a useful emission or absorption face and, behind this face, a substrate coated with an array of radiation-emitting or radiation-absorbing organic structures inserted between, and electrically contacting, electrodes that are respectively proximal and distal relative to the substrate. Separating beads between structures, composed of an insulating material, extend between the respective proximal electrodes of the structures from peripheral edges of these electrodes. The device includes a hermetic encapsulation that has at least one inorganic internal film surmounting the distal electrode, a photosensitive polymer layer covering this internal film, and a dielectric inorganic external film acting as a barrier covering the polymer layer.

Abstract: The invention relates to an organic optoelectronic device, such as a display device, which is protected from the surrounding air by a sealed encapsulation which includes thin layers, and to a method for encapsulating the same. Said device has an electroluminescent unit having at least one active area (5) covered with a multi-layer encapsulation structure (201) and an electric connection area adjacent to the active area, the encapsulation structure including n stack(s) (n?1) comprising an inorganic film F1, . . . , Fn and a photosensitive layer C1, . . . , Cn, including an internal stack F1/C1 in which F1 covers the active area and C1, which is deposited in a liquid phase, is superposed thereon. According to the invention, the layer or each layer C1, Cn is etched and covers the film F1, . . . , Fn by extending around a peripheral edge (5a) of the active area in at least one structured surrounding portion (210, 211, 212) ending beyond the adjacent connection area, and if n>2, the or each layer C2, . . .

Abstract: The invention relates to an organic optoelectronic device, such as a display, lighting or signalling device, that is protected from the ambient air by a sealed encapsulation in the form of a thin film, and to a method for encapsulating such a device. An optoelectronic device (1) according to the invention is coated with a sealed multi-layer encapsulation structure (20) comprising alternating inorganic layers (21a to 26a) and organic layers (21b to 25b). According to the invention, the device is such that at least one of said organic layers consists of a crosslinked adhesive film (21b to 25b) based on a glue that can be crosslinked thermally or by electromagnetic radiation, the or each adhesive film having a thickness uniformly lower than 200 n, said thickness being obtained by passing the film, which is deposited and not yet cross-linked, through a vacuum, such that the total thickness of the encapsulation structure is minimized.

Abstract: The invention relates to an organic optoelectronic device, such as a display device, which is protected from the surrounding air by a sealed encapsulation which includes thin layers, and to a method for encapsulating the same. Said device has an electroluminescent unit having at least one active area (5) covered with a multi-layer encapsulation structure (201) and an electric connection area adjacent to the active area, the encapsulation structure including n stack(s) (n?1) comprising an inorganic film F1, . . . , Fn and a photosensitive layer C1, . . . , Cn, including an internal stack F1/C1 in which F1 covers the active area and C1, which is deposited in a liquid phase, is superposed thereon. According to the invention, the layer or each layer C1, Cn is etched and covers the film F1, . . . , Fn by extending around a peripheral edge (5a) of the active area in at least one structured surrounding portion (210, 211, 212) ending beyond the adjacent connection area, and if n>2, the or each layer C2, . . .

Abstract: The device includes at least one optoelectronic component positioned on a substrate and at least one transparent face. The component is covered by a packaging layer which includes at least one barrier layer and a moisture-reactive layer. The reactive layer includes a moisture-reactive material chosen from alkaline-earth metals, alkali metals and organo-metallic derivatives. The material can be positioned in the moisture-reactive layer in the form of a continuous layer or in the form of a plurality of nodules dispersed in an organic matrix.

Abstract: The invention relates to an electroluminescent display, illumination or indicating device and to its fabrication process. This device (1) comprises a substrate (2) coated with an electroluminescent unit (3) having two electrodes, namely an internal electrode (5) and an external electrode (6), between which a light-emitting structure (4) is placed, at least one of said electrodes being transparent to the emitted light, a protective plate (7) being assembled on the unit by means of an adhesive (7a).

Abstract: The fabrication method comprises a step of exposing at least one organic diode to a gas, before packaging of the device, to form a plurality of randomly distributed black spots by impairment. Increasing the exposure time enables the size of the black spots to be increased, also randomly. The surface distribution of the black spots, visible by electroluminescence, enables an object associated with this distribution to be identified in reliable manner.

Abstract: The invention relates to an organic optoelectronic device, such as a display, lighting or signalling device, that is protected from the ambient air by a sealed encapsulation in the form of a thin film, and to a method for encapsulating such a device. An optoelectronic device (1) according to the invention is coated with a sealed multi-layer encapsulation structure (20) comprising alternating inorganic layers (21a to 26a) and organic layers (21b to 25b). According to the invention, the device is such that at least one of said organic layers consists of a crosslinked adhesive film (21b to 25b) based on a glue that can be crosslinked thermally or by electromagnetic radiation, the or each adhesive film having a thickness uniformly lower than 200 n, said thickness being obtained by passing the film, which is deposited and not yet cross-linked, through a vacuum, such that the total thickness of the encapsulation structure is minimised.

Abstract: The invention relates to an electroluminescent display, illumination or indicating device and to its fabrication process. This device (1) comprises a substrate (2) coated with an electroluminescent unit (3) having two electrodes, namely an internal electrode (5) and an external electrode (6), between which a light-emitting structure (4) is placed, at least one of said electrodes being transparent to the emitted light, a protective plate (7) being assembled on the unit by means of an adhesive (7a).

Abstract: The invention relates to a method for making an electronic display device (1) having a screen (3) covered by a protection plate, and to a substrate (2) covered by said screen for obtaining such a device. The method comprises the following steps: a) applying glue (10) at the non cross-linked state substantially on the entire surface of the screen and/or the assembling surface (11a) of the plate (11) following a deposit on the screen connection area (5) of at least one organic layer (15) for protecting the connection area from the glue; applying the assembling surface against the screen via the glue; c) emitting a radiation through the plate for cross-linking the glue; and d) removing a portion of the plate covering the connection area so that the latter can be electrically accessible, the protection layer being removed from the connection area upon said removal or during a further surface processing step.

Abstract: The device includes at least one optoelectronic component positioned on a substrate and at least one transparent face. The component is covered by a packaging layer which includes at least one barrier layer and a moisture-reactive layer. The reactive layer includes a moisture-reactive material chosen from alkaline-earth metals, alkali metals and organo-metallic derivatives. The material can be positioned in the moisture-reactive layer in the form of a continuous layer or in the form of a plurality of nodules dispersed in an organic matrix.