Patents by Inventor Tony Ozzello

Tony Ozzello has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fabricating deeper and shallower trenches in semiconductor structures
    Patent number: 7411268
    Abstract: Crossing trenches of different depths may be formed in the same semiconductor structure by etching the deeper trench first. The deeper trench and the substrate may then be covered with a material that prevents further etching. The covering is etched through for the shallower trench, leaving a protective covering in the deeper trench.
    Type: Grant
    Filed: April 12, 2004
    Date of Patent: August 12, 2008
    Assignee: Intel Corporation
    Inventors: Ilya Karpov, Tony Ozzello
  • Fabricating deeper and shallower trenches in semiconductor structures
    Publication number: 20040188796
    Abstract: Crossing trenches of different depths may be formed in the same semiconductor structure by etching the deeper trench first. The deeper trench and the substrate may then be covered with a material that prevents further etching. The covering is etched through for the shallower trench, leaving a protective covering in the deeper trench.
    Type: Application
    Filed: April 12, 2004
    Publication date: September 30, 2004
    Inventors: Ilya Karpov, Tony Ozzello
  • Fabricating deeper and shallower trenches in semiconductor structures
    Patent number: 6794268
    Abstract: Crossing trenches of different depths may be formed in the same semiconductor structure by etching the deeper trench first. The deeper trench and the substrate may then be covered with a material that prevents further etching. The covering is etched through for the shallower trench, leaving a protective covering in the deeper trench.
    Type: Grant
    Filed: July 31, 2002
    Date of Patent: September 21, 2004
    Assignee: Intel Corporation
    Inventors: Ilya Karpov, Tony Ozzello
  • Fabricating deeper and shallower trenches in semiconductor structures
    Publication number: 20040023467
    Abstract: Crossing trenches of different depths may be formed in the same semiconductor structure by etching the deeper trench first. The deeper trench and the substrate may then be covered with a material that prevents further etching. The covering is etched through for the shallower trench, leaving a protective covering in the deeper trench.
    Type: Application
    Filed: July 31, 2002
    Publication date: February 5, 2004
    Inventors: Ilya Karpov, Tony Ozzello