Patents by Inventor Tony Schenk

Tony Schenk has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240172451
    Abstract: Various aspects relate to a functional structure having predefined properties (e.g., predefined electronic properties, e.g., a predefined crystallographic texture. e.g., a defect density in a predefined range) and methods for manufacturing a functional structure having the predefined properties. A method for manufacturing a functional structure may include forming a first electrode, forming a functional layer, and forming a second electrode. The method may include one or more processing measures with reference to the formation of the first electrode and/or the formation of the functional layer, which lead to predefined properties of the functional structure. The functional layer may, for example, include a transition-metal-oxide or a metal-nitride and the one or more processing measures may lead to spontaneously polarizable properties of the transition-metal-oxide or metal-nitride.
    Type: Application
    Filed: March 26, 2021
    Publication date: May 23, 2024
    Inventor: Tony SCHENK
  • Publication number: 20240128308
    Abstract: A method for fabricating a ferroelectric device includes providing a lower electrode layer on a substrate, forming a retention enhancement layer by oxidizing a surface of the lower electrode layer using a gas phase oxidation process, and depositing a ferroelectric high-k metal oxide layer over the retention enhancement layer on the lower electrode layer using a vapor deposition process. The retention enhancement layer on the lower electrode layer increases the retention performance and reliability of the ferroelectric device.
    Type: Application
    Filed: October 16, 2023
    Publication date: April 18, 2024
    Inventors: Dina Triyoso, Robert Clark, Kandabara Tapily, Tony Schenk, Alireza Kashir, Stefan Ferdinand Mueller
  • Publication number: 20240032307
    Abstract: Various aspects relate to a memory cell including: a first electrode; a second electrode; and a memory element disposed between the first electrode and the second electrode. The memory element includes a spontaneously polarizable material. The first electrode, the second electrode, and the memory element forming a memory capacitor. The first electrode and/or the second electrode includes: an electrically conductive electrode layer, and a functional layer comprising a semi-conductive material, wherein the functional layer is in direct physical contact with the memory element.
    Type: Application
    Filed: July 14, 2023
    Publication date: January 25, 2024
    Inventors: Stefan Ferdinand MÜLLER, Tony SCHENK, Alireza KASHIR
  • Publication number: 20240032305
    Abstract: Various aspects relate to a memory cell including: a first electrode; a second electrode; and a memory element, the first electrode, the second electrode, and the memory element forming a memory capacitor; wherein the memory element includes a spontaneously polarizable layer stack which includes an alternating sequence of first sublayers and second sublayers, wherein each of the second sublayers substantially consists of a mixed material of an oxide of a first transition metal and an oxide of a second transition metal, wherein each of the first sublayers substantially consists of the oxide of the first transition metal or second transition metal; wherein a first concentration of the first transition metal and a second concentration of the second transition metal in the mixed material are substantially different from one another, and/or wherein the alternating sequence starts with one of the first sublayers and ends with another one of the first sublayers.
    Type: Application
    Filed: July 25, 2022
    Publication date: January 25, 2024
    Inventors: Alireza KASHIR, Tony SCHENK, Stefan Ferdinand MÜLLER
  • Publication number: 20230402083
    Abstract: Various aspects relate to a destructive read out operation to read out a memory state of a remanent polarizable capacitive memory element. The destructive read out operation may include causing a voltage drop sequence over the remanent polarizable capacitive memory element, wherein the voltage drop sequence includes one or more voltage drops of a first polarity and one or more voltage drops of a second polarity opposite the first polarity. In some aspects, the destructive read out operation is configured as a bipolar read out operation to determine the memory state of the remanent polarizable capacitive memory element based on an electrical behavior of the remanent polarizable capacitive memory element during the voltage drop sequence.
    Type: Application
    Filed: June 13, 2022
    Publication date: December 14, 2023
    Inventor: Tony SCHENK
  • Patent number: 11610903
    Abstract: Various aspects relate to a functional layer and the formation thereof. A method for manufacturing a functional layer of an electronic device may include: forming a plurality of sublayers of the functional layer by a plurality of consecutive sublayer processes, each sublayer process of the plurality of consecutive sublayer processes comprising: forming a sublayer of the plurality of sublayers by vapor deposition, the sublayer comprising one or more materials, and, subsequently, crystallizing the one or more materials comprised in the sublayer.
    Type: Grant
    Filed: March 26, 2021
    Date of Patent: March 21, 2023
    Assignee: FERROELECTRIC MEMORY GMBH
    Inventor: Tony Schenk
  • Patent number: 11605435
    Abstract: Various aspects relate to a threshold switch structure and a use of such threshold switch structure as a threshold switch in a memory cell arrangement, the threshold switch structure including: a first electrode, a second electrode, a switch element in direct physical contact with the first electrode and the second electrode, the switch element including a layer of a spontaneously polarizable material. The first electrode, the second electrode, and the switch element are configured to allow for a switching of the switch element between a first electrical conductance state and a second electrical conductance state as a function of a voltage drop provided over the switch element by the first electrode and the second electrode.
    Type: Grant
    Filed: July 19, 2021
    Date of Patent: March 14, 2023
    Assignee: FERROELECTRIC MEMORY GMBH
    Inventor: Tony Schenk
  • Publication number: 20220173114
    Abstract: Various aspects relate to a functional layer and the formation thereof. A method for manufacturing a functional layer of an electronic device may include: forming a plurality of sublayers of the functional layer by a plurality of consecutive sublayer processes, each sublayer process of the plurality of consecutive sublayer processes comprising: forming a sublayer of the plurality of sublayers by vapor deposition, the sublayer comprising one or more materials, and, subsequently, crystallizing the one or more materials comprised in the sublayer.
    Type: Application
    Filed: March 26, 2021
    Publication date: June 2, 2022
    Inventor: Tony Schenk
  • Publication number: 20220172791
    Abstract: Various aspects relate to a threshold switch structure and a use of such threshold switch structure as a threshold switch in a memory cell arrangement, the threshold switch structure including: a first electrode, a second electrode, a switch element in direct physical contact with the first electrode and the second electrode, the switch element including a layer of a spontaneously polarizable material. The first electrode, the second electrode, and the switch element are configured to allow for a switching of the switch element between a first electrical conductance state and a second electrical conductance state as a function of a voltage drop provided over the switch element by the first electrode and the second electrode.
    Type: Application
    Filed: July 19, 2021
    Publication date: June 2, 2022
    Inventor: Tony Schenk