Patents by Inventor Tooru Fukuya

Tooru Fukuya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making current-perpendicular-to-the-plane structure magnetoresistive head
    Patent number: 7343665
    Abstract: The lower electrode is at least exposed at the surface of a substructure layer in a current-perpendicular-to-the-plane structure magnetoresistive element. A resist is formed to extend over the surface of the substructure layer. A patterning void is defined in the resist. The shape of the patterning void is designed to correspond to the contour of the magnetoresistive multilayered film. The magnetoresistive multilayered film is formed by deposition within the patterning void. This method enables avoidance of a dry etching process effected on the magnetoresistive multilayered film. Scrapings or waste of the magnetoresistive multilayered film are not generated at all. The side surfaces of the magnetoresistive multilayered film are completely prevented from attachment or adhesion of scrapings or waste. The side surfaces of the magnetoresistive multilayered film are kept stainless.
    Type: Grant
    Filed: October 28, 2002
    Date of Patent: March 18, 2008
    Assignee: Fujitsu Limited
    Inventors: Chikayoshi Kamata, Shin Eguchi, Atsushi Tanaka, Tooru Fukuya
  • Method of making current-perpendicular-to-the-plane structure magnetoresistive head
    Publication number: 20030145453
    Abstract: The lower electrode is at least exposed at the surface of a substructure layer in a current-perpendicular-to-the-plane structure magnetoresistive element. A resist is formed to extend over the surface of the substructure layer. A patterning void is defined in the resist. The shape of the patterning void is designed to correspond to the contour of the magnetoresistive multilayered film. The magnetoresistive multilayered film is formed by deposition within the patterning void. This method enables avoidance of a dry etching process effected on the magnetoresistive multilayered film. Scrapings or waste of the magnetoresistive multilayered film are not generated at all. The side surfaces of the magnetoresistive multilayered film are completely prevented from attachment or adhesion of scrapings or waste. The side surfaces of the magnetoresistive multilayered film are kept stainless.
    Type: Application
    Filed: October 28, 2002
    Publication date: August 7, 2003
    Applicant: FUJITSU LIMITED
    Inventors: Chikayoshi Kamata, Shin Eguchi, Atsushi Tanaka, Tooru Fukuya