Patents by Inventor Tooru Haga

Tooru Haga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and its fabrication method
    Patent number: 5481120
    Abstract: Disclosed is a semiconductor device using a polycrystalline compound semiconductor with a low resistance as a low resistance layer, and its fabrication method. The above polycrystalline compound semiconductor layer is doped with C or Be as impurities in a large amount, and is extremely low in resistance. The polycrystalline compound semiconductor layer is formed by either of a molecular beam epitaxy method, an organometallic vapor phase epitaxy method and an organometallic molecular beam epitaxy method under the condition that a substrate temperature is 450.degree. C. or less and the ratio of partial pressure of a V-group element to a III-group element is 50 or more.
    Type: Grant
    Filed: December 10, 1993
    Date of Patent: January 2, 1996
    Assignee: Hitachi, Ltd.
    Inventors: Kazuhiro Mochizuki, Tomoyoshi Mishima, Tohru Nakamura, Hiroshi Masuda, Tomonori Tanoue, Tooru Haga, Yoshihisa Fujisaki