Abstract: A method of manufacturing a back electrode type solar cell, may include forming by physical vapor deposition at least one layer of an electrode material film on both a first conductivity type semiconductor layer, to give a first electrode layer, and a second conductivity type semiconductor layer, to give a second electrode layer, and patterning the first electrode layer and the second electrode layer each in a strip-like shape such that the first electrode layer and the second electrode layer both extend in a first direction and are arranged in a second direction by removing a part of the electrode material film.

Abstract: A method of manufacturing a back electrode type solar cell, may include forming by physical vapor deposition at least one layer of an electrode material film on both a first conductivity type semiconductor layer, to give a first electrode layer, and a second conductivity type semiconductor layer, to give a second electrode layer, and patterning the first electrode layer and the second electrode layer each in a strip-like shape such that the first electrode layer and the second electrode layer both extend in a first direction and are arranged in a second direction by removing a part of the electrode material film.

Abstract: A solar cell includes: a cell main body part including a back electrode and a photoelectric conversion section, the back electrode being arranged on a back surface of the photoelectric conversion section; and a metal film disposed in contact with the back electrode of the cell main body part. The back electrode includes a plurality of projections or recesses with an arithmetic mean roughness of more than 0.1 ?m. The metal film has an arithmetic mean roughness of more than 0.1 ?m on a surface contacting the back electrode. The metal film covers at least 10% of a back surface of the cell main body part.

Abstract: Provided is a transparent conductive film including a transparent electrode layer composed of a patterned thin metal wire on at least one surface of a transparent film substrate. The line width of the wire is 5 ?m or less. The wire includes a first metal layer and a second metal layer that is in contact with the first metal layer, in this order from a transparent film substrate side. Both of the first and second metal layers contain copper in an amount of 90% by weight or more. The total film thickness of the first and second metal layers is 150 to 1000 nm. The diffraction angle 2? of the (111) plane of the second metal layer is less than 43.400° as measured using a CuK? ray as an X-ray source, and the first metal layer has crystal properties different from those of the second metal layer.

Abstract: Provided is a transparent conductive film including a transparent electrode layer composed of a patterned thin metal wire on at least one surface of a transparent film substrate. The line width of the wire is 5 ?m or less. The wire includes a first metal layer and a second metal layer that is in contact with the first metal layer, in this order from a transparent film substrate side. Both of the first and second metal layers contain copper in an amount of 90% by weight or more. The total film thickness of the first and second metal layers is 150 to 1000 nm. The diffraction angle 2? of the (111) plane of the second metal layer is less than 43.400° as measured using a CuK? ray as an X-ray source, and the first metal layer has crystal properties different from those of the second metal layer.