Patents by Inventor Tooru Onoda

Tooru Onoda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Polycrystalline silicon material
    Patent number: 11932964
    Abstract: A polycrystalline silicon material for producing silicon single crystal, containing a plurality of polycrystalline silicon chunks, in which assuming that a total concentration of donor elements present inside a bulk body of the polycrystalline silicon material is Cd1 [ppta], a total concentration of acceptor elements present inside the bulk body of the polycrystalline silicon material is Ca1 [ppta], a total concentration of the donor elements present on a surface of the polycrystalline silicon material is Cd2 [ppta], and a total concentration of the acceptor elements present on the surface of the polycrystalline silicon material is Ca2 [ppta], Cd1, Ca1, Cd2, and Ca2 satisfy a relation of 5 [ppta]?(Ca1+Ca2)?(Cd1+Cd2)?26 [ppta].
    Type: Grant
    Filed: April 2, 2020
    Date of Patent: March 19, 2024
    Assignee: Tokuyama Coporation
    Inventors: Takuya Asano, Kouichi Saiki, Miki Emoto, Tooru Onoda
  • Polycrystalline Silicon Material
    Publication number: 20220204349
    Abstract: A polycrystalline silicon material for producing silicon single crystal, containing a plurality of polycrystalline silicon chunks, in which assuming that a total concentration of donor elements present inside a bulk body of the polycrystalline silicon material is Cd1 [ppta], a total concentration of acceptor elements present inside the bulk body of the polycrystalline silicon material is Ca1 [ppta], a total concentration of the donor elements present on a surface of the polycrystalline silicon material is Cd2 [ppta], and a total concentration of the acceptor elements present on the surface of the polycrystalline silicon material is Ca2 [ppta], Cd1, Ca1, Cd2, and Ca2 satisfy a relation of 2 [ppta]?(Cd1+Cd2)?(Ca1+Ca2)?8 [ppta].
    Type: Application
    Filed: April 2, 2020
    Publication date: June 30, 2022
    Applicant: Tokuyama Corporation
    Inventors: Takuya Asano, Kouichi Saiki, Miki Emoto, Tooru Onoda
  • Polycrystalline Silicon Material
    Publication number: 20220195621
    Abstract: A polycrystalline silicon material for producing silicon single crystal, containing a plurality of polycrystalline silicon chunks, in which assuming that a total concentration of donor elements present inside a bulk body of the polycrystalline silicon material is Cd1 [ppta], a total concentration of acceptor elements present inside the bulk body of the polycrystalline silicon material is Ca1 [ppta], a total concentration of the donor elements present on a surface of the polycrystalline silicon material is Cd2 [ppta], and a total concentration of the acceptor elements present on the surface of the polycrystalline silicon material is Ca2 [ppta], Cd1, Ca1, Cd2, and Ca2 satisfy a relation of 5 [ppta]?(Ca1+Ca2)?(Cd1+Cd2)?26 [ppta].
    Type: Application
    Filed: April 2, 2020
    Publication date: June 23, 2022
    Applicant: Tokuyama Corporation
    Inventors: Takuya Asano, Kouichi Saiki, Miki Emoto, Tooru Onoda