Abstract: The stainless steel contains 0.0001 mass % or more and 0.15 mass % or less of C, 0.30 mass % or more and 2.0 mass % or less of Si, 0.1 mass % or more and 15 mass % or less of Mn, 5 mass % or more and 30 mass % or less of Ni, 0.0001 mass % or more and 0.01 mass % or less of S, 16 mass % or more and 25 mass % or less of Cr, 0 mass % or more and 5 mass % or less of Mo, 0 mass % or more and 0.005 mass % or less of Al, 0 mass % or more and 0.0010 mass % or less of Mg, 0.0010 mass % or more and 0.0060 mass % or less of 0, and 0.0001 mass % or more and 0.5 mass % or less of N, and at least includes an inclusion with an equivalent circle diameter of 5 ?m or more, having the average composition of 5 mass % or more of MnO, 20 mass % or more of Cr2O3+Al2O3, 1 mass % or more of Al2O3, and 5 mass % or less of Ca0. The number density of the inclusion having the composition is 0.5 inclusions/mm2 or less.

Abstract: A stainless steel with reduced S and suppressed generation of hard inclusions. Inclusions with an equivalent circle diameter of 5 ?m or more, the number density of a first inclusion having the average composition of, in mass %, CaO: 0% or more and 15% or less, SiO2: 0% or more and 20% or less, Al2O3: 50% or more and 70% or less, and MgO: 10% or more and 40% or less is 0.5 inclusions/mm2 or less, the number density of a second inclusion having CaO: 10% or more and 70% or less, SiO2: 10% or more and 65% or less, Al2O3: 20% or less, MgO: 5% or more and 50% or less, and CaF2: 0% or more and 5% or less is 0.2 inclusions/mm2 or less, and the number density of a third inclusion having CaO: 5% or more and 40% or less, SiO2: 10% or more and 40% or less, Al2O3: 10% or more and 40% or less, MgO: 5% or more and 30% or less, and CaF2: 5% or more and 40% or less is 0.005 inclusions/mm2 or more and 0.5 inclusions/mm2 or less.

Abstract: The stainless steel for metal foils includes, in mass %, 0.0001% or more and 0.15% or less of C, 0.30% or more and 2.0% or less of Si, 0.1% or more and 15% or less of Mn, 0.040% or less of P, 5% or more and 30% or less of Ni, 0.0001% or more and 0.01% or less of S, 16% or more and 25% or less of Cr, 5% or less of Mo, 0.005% or less of Al, 0.0030% or less of Ca, 0.0010% or less of Mg, 0.0010% or more and 0.0060% or less of O, and 0.0001% or more and 0.5% or less of N. The number of inclusions with a maximum equivalent circle diameter of 5 ?m or more is 0.5 inclusions/mm2 or less in a thickness of 0.010 mm or more and 0.2 mm or less.

Abstract: A pattern forming method includes developing a resist film on a main surface of a substrate by flowing a developing solution on the film to form a resist pattern, the developing the film including partitioning the surface into M (?2) regions and determining correction exposure dose for each of the M region, the determining the correction exposure dose including determining a correction exposure dose for an i-th (1?i?M) region so that an actual pattern dimension of a pattern on the i-th region matches a design pattern dimension based on a pattern opening ratio of a pattern to be formed on the substrate, the pattern being located on a region which is further upstream region than the i-th region with respect to an upstream direction of a flow of the solution, and forming the pattern by etching the substrate using the resist pattern as a mask.

Abstract: A voltage controlled oscillator includes an LC resonance circuit having an inductance and a voltage dependent variable capacitance connected in parallel between first and second output terminals; a transistor pair circuit connected in parallel with the LC resonance circuit between the first and second output terminals and having negative conductance to keep oscillation of the LC resonance circuit; a resistance having one end connected with the oscillation transistor pair circuit; and a current source connected with the other end of the resistance.

Abstract: A pattern forming method includes developing a resist film on a main surface of a substrate by flowing a developing solution on the film to form a resist pattern, the developing the film including partitioning the surface into M (?2) regions and determining correction exposure dose for each of the M region, the determining the correction exposure dose including determining a correction exposure dose for an i-th (1?i?M) region so that an actual pattern dimension of a pattern on the i-th region matches a design pattern dimension based on a pattern opening ratio of a pattern to be formed on the substrate, the pattern being located on a region which is further upstream region than the i-th region with respect to an upstream direction of a flow of the solution, and forming the pattern by etching the substrate using the resist pattern as a mask.

Abstract: A hydrogenated diene block copolymer having a polystyrene-reduced number-average molecular weight of 50,000-600,000 which is a hydrogenation product of an (A)-(B) block copolymer in which (A) means an alkenyl aromatic compound polymer block and (B) means a conjugated diene homopolymer block wherein the vinyl content of the conjugated diene portion is more than 60%, or an alkenyl aromatic compound-conjugated diene random copolymer block wherein the vinyl content of the conjugated diene portion is 15% or more, an (A)-(B)-(C) block copolymer in which (A) and (B) are as defined above and (C) means an alkenyl aromatic compound-conjugated diene copolymer tapered block wherein the proportion of the alkenyl aromatic compound increases gradually, or an (A)-(B)-(A) block copolymer in which (A) and (B) are as defined above. Said hydrogenated diene block copolymer is useful as a modifier for polar resins, non-polar resins or both of them.

Abstract: A hydrogenated diene block copolymer having a polystyrene-reduced number-average molecular weight of 50,000-600,000 which is a hydrogenation product of an (A)-(B) block copolymer in which (A) means an alkenyl aromatic compound polymer block and (B) means a conjugated diene homopolymer block wherein the vinyl content of the conjugated diene portion is more than 60%, or an alkenyl aromatic compound-conjugated diene random copolymer block wherein the vinyl content of the conjugated diene portion is 15% or more, an (A)-(B)-(C) block copolymer in which (A) and (B) are as defined above and (C) means an alkenyl aromatic compound-conjugated diene copolymer tapered block wherein the proportion of the alkenyl aromatic compound increases gradually, or an (A)-(B)-(A) block copolymer in which (A) and (B) are as defined above and in which hydrogenation product at least 80% of the double bonds of the conjugated diene portion is saturated by the hydrogenation.

Abstract: A hydrogenated block copolymer having a number-average molecular weight of 40,000-700,000, obtained by hydrogenating at least 80% of the olefinic bonds of a block copolymer having in the molecule at least one each ofa polymer block A composed of 90% by weight or more of a vinyl aromatic compound,a polybutadiene polymer block B having a 1,2-vinyl structure of 30-70%, anda polybutadiene polymer block C having a 1,2-vinyl structure of less than 30%,in which block copolymer the blocks A, B and C are contained at a specific ratio, or a unit of the block copolymer is bonded, via a coupling agent residue, to at least one polymer block unit of the blocks A, B and C and thereby the polymer molecular chain is extended or branched; and a thermoplastic resin composition comprising the hydrogenated block copolymer.

Abstract: A hydrogenated diene block copolymer having a polystyrene-reduced number-average molecular weight of 50,000-600,000 which is a hydrogenation product of an (A)--(B) block copolymer in which (A) means an alkenyl aromatic compound polymer block and (B) means a conjugated diene homopolymer block wherein the vinyl content of the conjugated diene portion is more than 60%, or an alkenyl aromatic compound-conjugated diene random copolymer block wherein the vinyl content of the conjugated diene portion is 15% or more, an (A)--(B)--(C) block copolymer in which (A) and (B) are as defined above and (C) means an alkenyl aromatic compound-conjugated diene copolymer tapered block wherein the proportion of the alkenyl aromatic compound increases gradually, or an (A)--(B)--(A) block copolymer in which (A) and (B) are as defined above, in which block copolymer(1) the weight proportion of theh alkenyl aromatic compound/the conjugated diene is 5/95 to 60/40, and(2) the content of the bound alkenyl aromatic compound in at least o

Abstract: A hydrogenated diene copolymer resin composition comprising (A) 5-70% by weight of a hydrogenated diene copolymer which is a hydrogenation product of a random copolymer of at least one conjugated diene and 3-50% by weight of an alkenyl aromatic compound having a number average molecular weight of 5,000-1,000,000 and a molecular weight distribution (Mw/Mn) of 10 or less, the vinyl content in the diene portion of the random copolymer being 10-90%, at least 70% of the olefinic unsaturation of the random copolymer being hydrogenated, and (B) 95-30% by weight of at least one resin selected from the group consisting of a polypropylene resin, a polyphenylene ether resin and an alkenyl aromatic compound polymer resin.

Abstract: A process for producing a conjugated diene polymer, characterized by polymerizing at least one conjugated diene with a catalyst consisting of (A) a reaction product of a Lewis base and a carboxylate of a rare earth element of the lanthanum series represented by Ln(R.sup.1 CO.sub.2).sub.3 wherein Ln is a rare earth element of the lanthanum series having an atomic number of 57 to 71 and R.sup.1 is a hydrocarbon substituent having 1 to 20 carbon atoms, (B) an organic aluminum compound represented by AlR.sup.2 R.sup.3 R.sup.4 wherein R.sup.2, R.sup.3 and R.sup.4, which may be identical or different, represent hydrogen atoms or hydrocarbon substituents having 1 to 8 carbon atoms, excluding the case where all of R.sup.2, R.sup.3 and R.sup.4 are hydrogen atoms at the same time, and (C) an (alkyl)aluminum halide represented by AlX.sub.n R.sup.5.sub.3-n wherein X is Cl, Br, F or I; R.sup.5 is a hydrocarbon substituent having 1 to 8 carbon atoms; and n has a value of 1, 1.

Abstract: A process for preparing polybutadiene having a 1,2-configuration content of 5-40% and a cis-1,4-configuration content of 60% or more, which comprises polymerizing 1,3-butadiene in the presence of a catalyst consisting of:(A) a cobalt compound,(B) at least one member selected from the group consisting of:(i) a trialkylaluminum,(ii) a reaction product of a trialkylaluminum and an alcohol or water,(iii) a mixture of a trialkylaluminum and a dialkylaluminum halide,(iv) a dialkylaluminum hydride, and(v) an organolithium compound, and(C) at least one compound selected from the group consisting of phenyl isothiocyanate and carbon disulfide, in a hydrocarbon or halogenated hydrocarbon solution of a high cis-1,4-polybutadiene obtained by polymerizing 1,3-butadiene with a catalyst consisting of:(D) at least one compound selected from the group consisting of the organocarboxylates of nickel and organic complex compounds of nickel,(E) at least one compound selected from the group consisting of boron trifluoride, boron tr

Abstract: High molecular weight cis-1,4-polyisoprene is produced by contacting isoprene with a catalyst formed by admixing (A) a titanium tetrachloride, (B) a trihydrocarbylaluminum and (C) a beta-diketone. The activity of this ternary catalyst is not adversely affected by such impurities as cyclopentadiene that are contained in the feed stock isoprene.