Patents by Inventor Tooru Shimizu

Tooru Shimizu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20020084469
    Abstract: An image sensor is provided, in which characteristics of the sensor when it becomes a finished product, can be inspected even in a chip state without the influence of minority carriers in a scribe region. A linear image sensor IC having no guard ring PN junction between a PN junction for receiving light and an adjacent scribe region is structured such that a silicon substrate surface retaining a silicon substrate impurity concentration appears in the scribe region. Alternatively, a linear image sensor IC is structured such that the scribe region forms a PN junction of a silicon substrate impurity concentration, the PN junction being given no electric potential.
    Type: Application
    Filed: September 27, 2001
    Publication date: July 4, 2002
    Inventor: Tooru Shimizu
  • Patent number: 6303919
    Abstract: A light receiving element is provided with a phototransistor and a light receiving MOS diode proximate thereto and having a gate electrode covering a portion of the base region of the phototransistor. The gate electrode permits transmission of a portion of received light. The light receiving MOS diode forms an inversion layer in a substrate adjacent the base of a phototransistor during the time photo charges are stored, and generated photo charges are stored in the inversion region and the base region of the phototransistor. During the storage state, the potential of the inversion region and the base region of the phototransistor is limited, so that the intensity of an electric field applied to an insulating film between the electrode and the semiconductor substrate is 0.7 MV/cm or less. Alternatively, the potential of the electrode in a waiting state is fixed or made floating, so that an electric field is not applied, and recombination at the surface of the semiconductor substrate is made stable.
    Type: Grant
    Filed: April 26, 1999
    Date of Patent: October 16, 2001
    Assignee: Seiko Instruments Inc.
    Inventors: Masahiro Yokomichi, Yukito Kawahara, Satoshi Machida, Tooru Shimizu
  • Patent number: 4532644
    Abstract: A rotate/rotate type X-ray computerized tomograph system employing a single-phase transformer as a high tension voltage supply whereby the secondary voltage of the single phase transformer is rectified and applied across the anode and cathode of an X-ray tube. Such a system, advantageously, is compact and lightweight and employs components which are substantially less costly than those of the prior art.
    Type: Grant
    Filed: December 13, 1982
    Date of Patent: July 30, 1985
    Assignee: Yokogawa Hokushin Electric Corporation
    Inventors: Keiki Yamaguchi, Tadashi Ogawa, Masayoshi Mitamura, Tooru Shimizu