Patents by Inventor Tooru SUGA

Tooru SUGA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor switch
    Patent number: 10347655
    Abstract: A radio frequency switch includes a switch circuit having switchable radio frequency (RF) signal pathways. Each switchable RF signal pathway comprises a plurality of n-type MOSFETs connected in series. A control circuit is configured to control a conduction state of the plurality of switchable RF signal pathways. Each n-type MOSFET includes a body region between a source region thereof and a drain region thereof. A gate electrode is on the body region. A silicon nitride film having a tensile internal stress covers the source layer, the drain layer, and the gate electrode.
    Type: Grant
    Filed: January 19, 2017
    Date of Patent: July 9, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazuya Nishihori, Keita Masuda, Tooru Suga, Takahiro Nakagawa, Kazuhiko Shibata
  • SEMICONDUCTOR SWITCH
    Publication number: 20170213848
    Abstract: A radio frequency switch includes a switch circuit having switchable radio frequency (RF) signal pathways. Each switchable RF signal pathway comprises a plurality of n-type MOSFETs connected in series. A control circuit is configured to control a conduction state of the plurality of switchable RF signal pathways. Each n-type MOSFET includes a body region between a source region thereof and a drain region thereof. A gate electrode is on the body region. A silicon nitride film having a tensile internal stress covers the source layer, the drain layer, and the gate electrode.
    Type: Application
    Filed: January 19, 2017
    Publication date: July 27, 2017
    Inventors: Kazuya NISHIHORI, Keita MASUDA, Tooru SUGA, Takahiro NAKAGAWA, Kazuhiko SHIBATA