Patents by Inventor Torben Kelwing

Torben Kelwing has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CET and gate current leakage reduction in high-k metal gate electrode structures by heat treatment after diffusion layer removal
    Patent number: 8735240
    Abstract: When forming high-k metal gate electrode structures by providing the gate dielectric material in an early manufacturing stage, the heat treatment or anneal process may be applied after incorporating work function metal species and prior to capping the gate dielectric material with a metal-containing electrode material. In this manner, the CET for a given physical thickness for the gate dielectric layer may be significantly reduced.
    Type: Grant
    Filed: April 25, 2012
    Date of Patent: May 27, 2014
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Torben Kelwing, Martin Trentzsch, Boris Bayha, Carsten Grass, Richard Carter
  • CET AND GATE CURRENT LEAKAGE REDUCTION IN HIGH-K METAL GATE ELECTRODE STRUCTURES BY HEAT TREATMENT AFTER DIFFUSION LAYER REMOVAL
    Publication number: 20130288435
    Abstract: When forming high-k metal gate electrode structures by providing the gate dielectric material in an early manufacturing stage, the heat treatment or anneal process may be applied after incorporating work function metal species and prior to capping the gate dielectric material with a metal-containing electrode material. In this manner, the CET for a given physical thickness for the gate dielectric layer may be significantly reduced.
    Type: Application
    Filed: April 25, 2012
    Publication date: October 31, 2013
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Torben Kelwing, Martin Trentzsch, Boris Bayha, Carsten Grass, Richard Carter
  • MULTIPLE HIGH-K METAL GATE STACKS IN A FIELD EFFECT TRANSISTOR
    Publication number: 20130277766
    Abstract: When forming sophisticated high-k metal gate electrode structures, the threshold voltage characteristics are adjusted on the basis of a well-established high-k dielectric material with an appropriate layer thickness, for instance by incorporating an appropriate metal species. Thereafter, further high-k dielectric materials may be deposited, typically with a greater dielectric constant, so as to define the final CET and physical thickness.
    Type: Application
    Filed: April 23, 2012
    Publication date: October 24, 2013
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Torben Kelwing, Martin Trentzsch, Richard Carter