Abstract: The present disclosure relates in a first aspect to a method of detecting leakage current from a DC bias voltage circuit of an integrated circuit for a capacitive microelectro mechanical systems (MEMS) transducer. A test signal with a predetermined frequency and level is superimposed on a first DC bias voltage generated by the DC bias voltage circuit.

Abstract: The present disclosure relates to devices and methods for programming one-time programmable fuses of microphone assemblies. One microphone assembly includes a housing, a transducer, a filter circuit, and an integrated circuit. The integrated circuit has a fuse block having a one-time programmable (OTP) fuse configurable in a programming mode of operation during which a voltage applied to the supply voltage contact is increased relative to a voltage applied to a supply voltage contact in a normal mode of operation. The microphone assembly further includes a protection circuit configured to regulate a voltage at the voltage input terminal of the integrated circuit during the programming mode of operation based on a comparison of a voltage at the voltage input terminal with a reference voltage. The voltage on the voltage input terminal of the integrated circuit tracks the reference voltage during the programming mode of operation.

Abstract: The present disclosure relates to devices and methods for programming one-time programmable fuses of microphone assemblies. One microphone assembly includes a housing, a transducer, a filter circuit, and an integrated circuit. The integrated circuit has a fuse block having a one-time programmable (OTP) fuse configurable in a programming mode of operation during which a voltage applied to the supply voltage contact is increased relative to a voltage applied to a supply voltage contact in a normal mode of operation. The microphone assembly further includes a protection circuit configured to regulate a voltage at the voltage input terminal of the integrated circuit during the programming mode of operation based on a comparison of a voltage at the voltage input terminal with a reference voltage. The voltage on the voltage input terminal of the integrated circuit tracks the reference voltage during the programming mode of operation.

Abstract: An electronics chip includes a charge pump and at least one high voltage (HV) electro-static discharge (ESD) module. The charge pump is configured to provide a predetermined voltage across a microphone. The devices described herein are implemented in a standard low voltage CMOS process and has a circuit topology that provides an inherent ESD protection level (when it is powered down), which is higher than the operational (predetermined) DC level. At least one high voltage (HV) electro-static discharge (ESD) module is coupled to the output of the charge pump. The HV ESD module is configured to provide ESD protection for the charge pump and a microelectromechanical system (MEMS) microphone that is coupled to the chip. The at least one HV ESD module includes a plurality of PMOS or NMOS transistors having at least one high voltage NWELL/DNWELL region formed within selected ones of the PMOS or NMOS transistors.

Abstract: An electronics chip includes a charge pump and at least one high voltage (HV) electro-static discharge (ESD) module. The charge pump is configured to provide a predetermined voltage across a microphone. The devices described herein are implemented in a standard low voltage CMOS process and has a circuit topology that provides an inherent ESD protection level (when it is powered down), which is higher than the operational (predetermined) DC level. At least one high voltage (HV) electro-static discharge (ESD) module is coupled to the output of the charge pump. The HV ESD module is configured to provide ESD protection for the charge pump and a microelectromechanical system (MEMS) microphone that is coupled to the chip. The at least one HV ESD module includes a plurality of PMOS or NMOS transistors having at least one high voltage NWELL/DNWELL region formed within selected ones of the PMOS or NMOS transistors.

Abstract: An electronics chip includes a charge pump and at least one high voltage (HV) electro-static discharge (ESD) module. The charge pump is configured to provide a predetermined voltage across a microphone. The devices described herein are implemented in a standard low voltage CMOS process and has a circuit topology that provides an inherent ESD protection level (when it is powered down), which is higher than the operational (predetermined) DC level. At least one high voltage (HV) electro-static discharge (ESD) module is coupled to the output of the charge pump. The HV ESD module is configured to provide ESD protection for the charge pump and a microelectromechanical system (MEMS) microphone that is coupled to the chip. The at least one HV ESD module includes a plurality of PMOS or NMOS transistors having at least one high voltage NWELL/DNWELL region formed within selected ones of the PMOS or NMOS transistors.

Abstract: Techniques to modify bias levels of a limiting amplifier based on a transition measurement and measurements before and after the transition.