Abstract: A laser device includes a III-V heterostructure amplifying medium; a silicon optical waveguide having a coupling section facing a central portion of the amplifying medium, a propagation section and a first transition section between the coupling section and the propagation section; and a first and a second reflective structure allowing a Fabry-Perot type resonant cavity to be formed between them for the amplifying medium. The coupling section includes a refractive index disruption region provided with micro-reflectors designed to reduce the thickness and/or width of the coupling section. The first reflective structure is formed in a section of the waveguide with a first thickness. The second reflective structure is formed in a section of the waveguide, which has the first thickness and which is separated from the coupling section by a second transition section of the waveguide, the second transition section having a second thickness greater than the first thickness.

Abstract: An integrated photonic chip (PIC) for generating at least one combined light emission includes a bank of lasers having different wavelengths, the bank including at least two lasers emitting a first light emission and a second light emission. The integrated photonic chip further includes at least two active combining devices that are optically associated with the bank of lasers and configured to produce, on at least one optical output, the combined light emission (l1+l?1, l2+l?2; l1+l2, l?1+l?2) combining the light emissions received on its optical inputs. An optical component includes such a photonic chip.

Abstract: A photonic device for providing light radiation comprises a wave guide, an N-type semiconductor layer covering the wave guide and an active region formed by a stack of layers made of III-V materials. The photonic device also comprises a plurality of P-type semiconductor pillars arranged on, and in contact with, the active region. At least a first metal pad is in ohmic contact with the free portion of the N-type layer and at least a second metal pad is in ohmic contact with the P-type pillars.

Abstract: A laser device includes a III-V heterostructure amplifying medium; a silicon optical waveguide having a coupling section facing a central portion of the amplifying medium, a propagation section and a first transition section between the coupling section and the propagation section; and a first and a second reflective structure allowing a Fabry-Perot type resonant cavity to be formed between them for the amplifying medium. The coupling section includes a refractive index disruption region provided with micro-reflectors designed to reduce the thickness and/or the width of the coupling section. The first reflective structure is formed in a section of the waveguide with a first thickness. The second reflective structure is formed in a section of the waveguide, which has the first thickness and which is separated from the coupling section by a second transition section of the waveguide, the second transition section having a second thickness that is greater than the first thickness.

Abstract: A photonic device comprising: a support; an intermediate layer (; an optical guiding level including a waveguide and a first to a fifth waveguide section. The photonic device further includes a first dielectric layer covering the optical guiding level and a gain structure in contact with the first dielectric layer. The second and fourth waveguide sections and the first and second ends of the gain structure form a first and a second zone of optical transition between a laser hybrid waveguide, and respectively the first and the fifth waveguide sections. A pattern forming a Bragg grating is arranged over a first part of the thickness of the third waveguide section which is away from the gain structure.

Abstract: A photonic device comprising: a support; an intermediate layer (; an optical guiding level including a waveguide and a first to a fifth waveguide section. The photonic device further includes a first dielectric layer covering the optical guiding level and a gain structure in contact with the first dielectric layer. The second and fourth waveguide sections and the first and second ends of the gain structure form a first and a second zone of optical transition between a laser hybrid waveguide, and respectively the first and the fifth waveguide sections. A pattern forming a Bragg grating is arranged over a first part of the thickness of the third waveguide section which is away from the gain structure.