Patents by Inventor Torsten Bronger

Torsten Bronger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing silicon layers
    Patent number: 9234281
    Abstract: The invention relates to a liquid-phase method for the thermal production of silicon layers on a substrate, wherein at least one higher silicon that can be produced from at least one hydridosilane of the generic formula SiaH2a+2 (with a=3-10) being applied to a substrate and then being thermally converted to a layer that substantially consists of silicon, the thermal conversion of the higher silane proceeding at a temperature of 500-900° C. and a conversion time of ?5 minutes. The invention also relates to silicon layers producible according to said method and to their use.
    Type: Grant
    Filed: November 10, 2010
    Date of Patent: January 12, 2016
    Assignee: Evonik Degussa GmbH
    Inventors: Stephan Wieber, Matthias Patz, Reinhard Carius, Torsten Bronger, Michael Cölle
  • METHOD FOR THE HYDROGEN PASSIVATION OF SEMICONDUCTOR LAYERS
    Publication number: 20130328175
    Abstract: The present invention relates to a method for the hydrogen passivation of semiconductor layers, wherein the passivation is effected by using an arc plasma source, to the passivated semiconductor layers produced according to the method, and to the use thereof.
    Type: Application
    Filed: November 11, 2011
    Publication date: December 12, 2013
    Applicant: Evonik Degussa GmbH
    Inventors: Patrik Stenner, Stephan Wieber, Michael Cölle, Matthias Patz, Reinhard Carius, Torsten Bronger
  • METHOD FOR PRODUCING SILICON LAYERS
    Publication number: 20120273805
    Abstract: The invention relates to a liquid-phase method for the thermal production of silicon layers on a substrate, wherein at least one higher silicon that can be produced from at least one hydridosilane of the generic formula SiaH2a+2 (with a=3-10) being applied to a substrate and then being thermally converted to a layer that substantially consists of silicon, the thermal conversion of the higher silane proceeding at a temperature of 500-900° C. and a conversion time of ?5 minutes. The invention also relates to silicon layers producible according to said method and to their use.
    Type: Application
    Filed: November 10, 2010
    Publication date: November 1, 2012
    Applicant: Evonik Degussa GmbH
    Inventors: Stephan Wieber, Matthias Patz, Reinhard Carius, Torsten Bronger, Michael Cölle