Abstract: Methods and systems for calibrating system parameter values of a target inspection system are presented. Spectral Error Based Calibration (SEBC) increases consistency among inspection systems by minimizing differences in the spectral error among different inspection systems for a given specimen or set of specimens. The system parameter values are determined such that differences between a spectral error associated with a measurement of a specimen by the target inspection system and a spectral error associated with a measurement of the same specimen by a reference inspection system are minimized. In some examples, system parameter values are calibrated without modifying specimen parameters. Small inaccuracies in specimen parameter values have little effect on the calibration because the target system and the reference system both measure the same specimen or set of specimens. By performing SEBC over a set of specimens, the resulting calibration is robust to a wide range of specimens under test.

Abstract: Methods and tools for generating measurement models of complex device structures based on re-useable, parametric models are presented. Metrology systems employing these models are configured to measure structural and material characteristics associated with different semiconductor fabrication processes. The re-useable, parametric sub-structure model is fully defined by a set of independent parameters entered by a user of the model building tool. All other variables associated with the model shape and internal constraints among constituent geometric elements are pre-defined within the model. In some embodiments, one or more re-useable, parametric models are integrated into a measurement model of a complex semiconductor device. In another aspect, a model building tool generates a re-useable, parametric sub-structure model based on input from a user.

Abstract: The present invention includes generating a three-dimensional design of experiment (DOE) for a plurality of semiconductor wafers, a first dimension of the DOE being a relative amount of a first component of the thin film, a second dimension of the DOE being a relative amount of a second component of the thin film, a third dimension of the DOE being a thickness of the thin film, acquiring a spectrum for each of the wafers, generating a set of optical dispersion data by extracting a real component (n) and an imaginary component (k) of the complex index of refraction for each of the acquired spectrum, identifying one or more systematic features of the set of optical dispersion data; and generating a multi-component Bruggeman effective medium approximation (BEMA) model utilizing the identified one or more systematic features of the set of optical dispersion data.

Abstract: Methods and tools for generating measurement models of complex device structures based on re-useable, parametric models are presented. Metrology systems employing these models are configured to measure structural and material characteristics associated with different semiconductor fabrication processes. The re-useable, parametric sub-structure model is fully defined by a set of independent parameters entered by a user of the model building tool. All other variables associated with the model shape and internal constraints among constituent geometric elements are pre-defined within the model. In some embodiments, one or more re-useable, parametric models are integrated into a measurement model of a complex semiconductor device. In another aspect, a model building tool generates a re-useable, parametric sub-structure model based on input from a user.

Abstract: A local purging tool for purging a portion of a surface of a wafer with purging gas is disclosed. The purging tool includes a purging chamber configured to contain purging gas within a cavity of the purging chamber, a permeable portion of a surface of the purging chamber configured to diffuse purging gas from the cavity of the chamber to a portion of a surface of a wafer, and an aperture configured to transmit illumination received from an illumination source to a measurement location of the portion of the surface of the wafer and further configured to transmit illumination reflected from the measurement location to a detector.

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.

Abstract: A local purging tool for purging a portion of a surface of a wafer with purging gas is disclosed. The purging tool includes a purging chamber configured to contain purging gas within a cavity of the purging chamber, a permeable portion of a surface of the purging chamber configured to diffuse purging gas from the cavity of the chamber to a portion of a surface of a wafer, and an aperture configured to transmit illumination received from an illumination source to a measurement location of the portion of the surface of the wafer and further configured to transmit illumination reflected from the measurement location to a detector.

Abstract: A method for measurement of a specimen is provided. The method includes measuring spectroscopic ellipsometric data of the specimen. The method also includes determining a nitrogen concentration of a nitrided oxide gate dielectric formed on the specimen from the spectroscopic ellipsometric data. A computer-implemented method for analysis of a specimen is also provided. This method includes determining a nitrogen concentration of a nitrided oxide gate dielectric formed on the specimen from spectroscopic ellipsometric data generated by measurement of the specimen. In some embodiments, the methods described above may include determining an index of refraction of the nitrided oxide gate dielectric from the spectroscopic ellipsometric data and determining the nitrogen concentration from the index of refraction. In another embodiment, the methods described above may include measuring reflectometric data of the specimen.

Abstract: A method for measurement of a specimen is provided. The method includes measuring spectroscopic ellipsometric data of the specimen. The method also includes determining a nitrogen concentration of a nitrided oxide gate dielectric formed on the specimen from the spectroscopic ellipsometric data. A computer-implemented method for analysis of a specimen is also provided. This method includes determining a nitrogen concentration of a nitrided oxide gate dielectric formed on the specimen from spectroscopic ellipsometric data generated by measurement of the specimen. In some embodiments, the methods described above may include determining an index of refraction of the nitrided oxide gate dielectric from the spectroscopic ellipsometric data and determining the nitrogen concentration from the index of refraction. In another embodiment, the methods described above may include measuring reflectometric data of the specimen.